Configuring command/address channel for memory
Methods, systems, and devices for memory operations that support configuring a channel, such as a command/address (C/A) channel, are described. A configuration of a C/A channel may be dynamically adapted based on power saving considerations, control information execution latency, or both. Configuring a C/A channel may include determining a quantity of pins, or a quantity of cycles, both for communicating control information over the C/A channel. The quantity of pins may be determined based on previous control information transmissions, characteristics of a memory device, or predicted control information transmissions, or any combination thereof in some cases. The determined quantity of pins, quantity of cycles, or both may be explicitly or implicitly indicated to other devices (e.g., that use the C/A channel).
1. A method, comprising:
configuring, at a first time, a component to use a first quantity of pins and a first quantity of cycles to communicate commands via a channel;
communicating, based at least in part on configuring the component at the first time, a command over the channel in accordance with the first quantity of pins and the first quantity of cycles; and
configuring, at a second time that occurs after the first time and based at least in part on observed information associated with the commands, the component to use a second quantity of pins, a second quantity of cycles, or both, to communicate the commands via the channel, the first quantity of pins being different than the second quantity of pins, the first quantity of cycles being different than the second quantity of cycles, or both.
2. The method of claim 1 , further comprising:
identifying a quantity of commands in a buffer associated with one or more memory devices, the quantity of commands in the buffer comprising the observed information, wherein the component is configured to use the second quantity of pins, the second quantity of cycles, or both, based at least in part on the quantity of commands being greater than a threshold, and wherein the second quantity of pins is greater than the first quantity of pins, the second quantity of cycles is less than the first quantity of cycles, or both.
3. The method of claim 2 , further comprising:
identifying, at a third time that occurs after the second time, a quantity of second commands in the buffer; and
configuring the component to use the first quantity of pins and the first quantity of cycles based at least in part on the quantity of second commands in the buffer being less than the threshold.
4. The method of claim 1 , further comprising:
identifying a quantity of unused command slots in a time period, the quantity of unused command slots comprising the observed information, wherein the component is configured to use the second quantity of pins, the second quantity of cycles, or both, based at least in part on the quantity of unused command slots being greater than a threshold, and wherein the second quantity of pins is less than the first quantity of pins, the second quantity of cycles is greater than the first quantity of cycles, or both.
5. The method of claim 1 , further comprising:
identifying, at a third time that occurs after the second time, an amount of power being consumed by one or more memory devices, wherein the component is configured to use a third quantity of pins, a third quantity of cycles, or both, based at least in part on the amount of power being greater than a threshold, and wherein the third quantity of pins is less than the first quantity of pins, the third quantity of cycles is greater than the first quantity of cycles, or both.
6. The method of claim 1 , further comprising:
identifying, at a third time that occurs after the second time, a temperature of one or more memory devices, wherein the component is configured to use a third quantity of pins, a third quantity of cycles, or both, based at least in part on the temperature of the one or more memory devices being less than a threshold, and wherein the third quantity of pins is less than the first quantity of pins, the third quantity of cycles is greater than the first quantity of cycles, or both.
7. The method of claim 1 , further comprising:
identifying, at a third time that occurs after the second time, a page hit rate for one or more memory devices, wherein the component is configured to use a third quantity of pins, a third quantity of cycles, or both, based at least in part on the page hit rate being greater than a threshold, and wherein the third quantity of pins is less than the first quantity of pins, the third quantity of cycles is greater than the first quantity of cycles, or both.
8. The method of claim 1 , further comprising:
predicting, at a third time that occurs after the second time, access characteristics for one or more memory devices, wherein the component is configured to use a third quantity of pins, a third quantity of cycles, or both, based at least in part on the access characteristics.
9. The method of claim 1 , wherein the channel comprises a plurality of channels between a host device and a memory device.
10. An apparatus, comprising:
one or more processors; and
memory storing instructions executable by the one or more processors to cause the apparatus to:
configure, at a first time, a component to use a first quantity of pins and a first quantity of cycles to communicate commands via a channel;
communicate, based at least in part on configuring the component at the first time, a command over the channel in accordance with the first quantity of pins and the first quantity of cycles; and
configure, at a second time that occurs after the first time, the component to use a second quantity of pins, a second quantity of cycles, or both, to communicate the commands via the channel, the first quantity of pins being different than the second quantity of pins, the first quantity of cycles being different than the second quantity of cycles, or both, wherein the component is configured to use the second quantity of pins, the second quantity of cycles, or both, based at least in part on observed information associated with the commands.
11. The apparatus of claim 10 , wherein the instructions are further executable by the one or more processors to cause the apparatus to:
identify a quantity of commands in a buffer associated with one or more memory devices, the quantity of commands in the buffer comprising the observed information, wherein the component is configured to use the second quantity of pins, the second quantity of cycles, or both, based at least in part on the quantity of commands being greater than a threshold, and wherein the second quantity of pins is greater than the first quantity of pins, the second quantity of cycles is less than the first quantity of cycles, or both.
12. The apparatus of claim 10 , wherein the instructions are further executable by the one or more processors to cause the apparatus to:
identify a quantity of unused command slots in a time period, the quantity of unused command slots comprising the observed information, wherein the component is configured to use the second quantity of pins, the second quantity of cycles, or both, based at least in part on the quantity of unused command slots being greater than a threshold, and wherein the second quantity of pins is less than the first quantity of pins, the second quantity of cycles is greater than the first quantity of cycles, or both.
13. The apparatus of claim 10 , wherein the instructions are further executable by the one or more processors to cause the apparatus to:
identify, at a third time that occurs after the second time, an amount of power being consumed by one or more memory devices, wherein the component is configured to use a third quantity of pins, a third quantity of cycles, or both, based at least in part on the amount of power being greater than a threshold, and wherein the third quantity of pins is less than the first quantity of pins, the third quantity of cycles is greater than the first quantity of cycles, or both.
14. The apparatus of claim 10 , wherein the instructions are further executable by the one or more processors to cause the apparatus to:
identify, at a third time that occurs after the second time, a temperature of a memory device, wherein the component is configured to use a third quantity of pins, a third quantity of cycles, or both, based at least in part on the temperature of the memory device being less than a threshold, and wherein the third quantity of pins is less than the first quantity of pins, the third quantity of cycles is greater than the first quantity of cycles, or both.
15. The apparatus of claim 10 , wherein the instructions are further executable by the one or more processors to cause the apparatus to:
identify, at a third time that occurs after the second time, a page hit rate for one or more memory devices, wherein the component is configured to use a third quantity of pins, a third quantity of cycles, or both, based at least in part on the page hit rate being greater than a threshold, and wherein the third quantity of pins is less than the first quantity of pins, the third quantity of cycles is greater than the first quantity of cycles, or both.
16. The apparatus of claim 10 , wherein the instructions are further executable by the one or more processors to cause the apparatus to:
predict, at a third time that occurs after the second time, access characteristics for one or more memory devices, wherein the component is configured to use a third quantity of pins, a third quantity of cycles, or both, based at least in part on the access characteristics.
17. A non-transitory, computer-readable medium storing code that comprises instructions executable by one or more processors of an electronic device to cause the electronic device to:
configure, at a first time, a component to use a first quantity of pins and a first quantity of cycles to communicate commands via a channel;
communicate, based at least in part on configuring the component at the first time, a command over the channel in accordance with the first quantity of pins and the first quantity of cycles; and
configure, at a second time that occurs after the first time and based at least in part on observed information associated with the commands, the component to use a second quantity of pins, a second quantity of cycles, or both, to communicate the commands via the channel, the first quantity of pins being different than the second quantity of pins, the first quantity of cycles being different than the second quantity of cycles, or both.
18. The non-transitory, computer-readable medium of claim 17 , wherein the instructions are further executable by the one or more processors to cause the electronic device to:
identify a quantity of commands in a buffer associated with one or more memory devices, the quantity of commands in the buffer comprising the observed information, wherein the component is configured to use the second quantity of pins, the second quantity of cycles, or both, based at least in part on the quantity of commands being greater than a threshold, and wherein the second quantity of pins is greater than the first quantity of pins, the second quantity of cycles is less than the first quantity of cycles, or both.
19. The non-transitory, computer-readable medium of claim 17 , wherein the instructions are further executable by the one or more processors to cause the electronic device to:
identify a quantity of unused command slots in a time period, the quantity of unused command slots comprising the observed information, wherein the component is configured to use the second quantity of pins, the second quantity of cycles, or both, based at least in part on the quantity of unused command slots being greater than a threshold, and wherein the second quantity of pins is less than the first quantity of pins, the second quantity of cycles is greater than the first quantity of cycles, or both.
20. The non-transitory, computer-readable medium of claim 17 , wherein the instructions are further executable by the one or more processors to cause the electronic device to:
identify, at a third time that occurs after the second time, an amount of power being consumed by one or more memory devices, wherein the component is configured to use a third quantity of pins, a third quantity of cycles, or both, based at least in part on the amount of power being greater than a threshold, and wherein the third quantity of pins is less than the first quantity of pins, the third quantity of cycles is greater than the first quantity of cycles, or both.