TRANSISTOR
According to one embodiment, a transistor includes a gate electrode, an oxide semiconductor layer which overlaps the gate electrode and including a central portion and an end portion, and a source electrode and a drain electrode each connected to the oxide semiconductor layer, wherein an oxidation degree of the end portion is lower than an oxidation degree of the central portion, and a length of the gate electrode overlapping the central portion is greater than a length of the gate electrode overlapping the end portion.
1 . A transistor comprising:
a gate electrode;
an oxide semiconductor layer which overlaps the gate electrode and including a central portion and an end portion;
an insulating layer provided between the gate electrode and the oxide semiconductor layer; and
a source electrode and a drain electrode each connected to the oxide semiconductor layer, wherein
an oxidation degree of the end portion is lower than an oxidation degree of the central portion, and
a length of the gate electrode overlapping the central portion is greater than a length of the gate electrode overlapping the end portion.
2 . The transistor according to claim 1 , wherein the gate electrode is provided between the source electrode and the drain electrode, and the oxide semiconductor layer.
3 . The transistor according to claim 1 , further comprising:
a second gate electrode opposing the gate electrode when taken as a first gate electrode, wherein
the oxide semiconductor layer is provided between the first gate electrode and the second gate electrode.
4 . The transistor according to claim 1 , wherein the gate electrode has a shape in which a portion of a circle is cut by a string.
5 . The transistor according to claim 3 , wherein the first gate electrode and the second gate electrode each have a shape in which a portion of a circle is cut by a string, and
the second gate electrode is larger than the first gate electrode.
6 . A transistor comprising:
a gate electrode;
an oxide semiconductor layer overlapping the gate electrode and including a central portion and an edge portion;
an insulating layer between the gate electrode and the oxide semiconductor layer; and
a source electrode and a drain electrode each connected to the oxide semiconductor layer, wherein
an oxidation degree of the central portion is lower than an oxidation degree of the end portion, and
a length between the source electrode and the drain electrode in the central portion is greater than a length between the source electrode and the drain electrode in the end portion.
7 . The transistor according to claim 6 , wherein the oxide semiconductor layer is provided between the source electrode and the drain electrode, and the gate electrode.
8 . The transistor according to claim 6 , wherein the source electrode and the drain electrode each have a shape in which a portion of a rectangle is notched with an arc.
9 . A transistor comprising:
a gate electrode;
an oxide semiconductor layer which overlaps the gate electrode and including a central portion and an end portion;
an insulating layer provided between the gate electrode and the oxide semiconductor layer; and
a source electrode and a drain electrode each connected to the oxide semiconductor layer, wherein
an oxidation degree of the end portion is lower than an oxidation degree of the central portion, and
a length of the gate electrode which overlaps the end portion is greater than a length of the gate electrode which overlaps the central portion.
10 . The transistor according to claim 9 , wherein
the gate electrode is provided between the source electrode and the drain electrode, and the oxide semiconductor layer.
11 . The transistor according to claim 9 , further comprising:
a second gate electrode opposing the gate electrode when taken as a first gate electrode, wherein
the oxide semiconductor layer is provided between the first gate electrode and the second gate electrode.
12 . The transistor according to claim 9 , wherein
the gate electrode has a shape in which a rectangle is arranged between two ellipses partially cut by a string.
13 . The transistor according to claim 11 , wherein
the first gate electrode and the second gate electrode each have a shape in which a rectangle is arranged between two ellipses partially cut by a string, and
the second gate electrode is larger than the first gate electrode.