Silicon carbide semiconductor device including alternately provided pillars having different impurity concentrations
According to one embodiment, a silicon carbide semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, a plurality of first semiconductor pillar regions of a first conductivity type, a second semiconductor pillar region of a second conductivity type. The first semiconductor pillar regions include a first region has a first impurity concentration and second region has a second impurity concentration higher than the first impurity concentration. The second semiconductor pillar regions include a third region has a third impurity concentration and a fourth region has a fourth impurity concentration higher than the third impurity concentration.
1 . A silicon carbide semiconductor device comprising:
a first electrode;
a second electrode;
a first semiconductor layer provided between the first electrode and the second electrode and containing silicon carbide;
a plurality of first semiconductor pillar regions of a first conductivity type containing silicon carbide, the plurality of first semiconductor pillar regions being provided between the first semiconductor layer and the second electrode, the plurality of first semiconductor pillar regions each including
a first region having a first impurity concentration, and
a second region provided together with the first region in a second direction orthogonal to a first direction from the first electrode toward the second electrode and having a second impurity concentration higher than the first impurity concentration; and
a second semiconductor pillar region of a second conductivity type containing silicon carbide, the second semiconductor pillar region being provided between the first semiconductor layer and the second electrode and located between adjacent ones of the plurality of first semiconductor pillar regions in the second direction, the second semiconductor pillar region including:
a third region having a third impurity concentration, and
a fourth region provided together with the third region in the second direction and having a fourth impurity concentration higher than the third impurity concentration, wherein:
a concentration difference between the first impurity concentration of the first region and the second impurity concentration of the second region is stepwise, and
a concentration difference between the third impurity concentration of the third region and the fourth impurity concentration of the fourth region is stepwise.
2 . The device according to claim 1 , further comprising:
a second semiconductor layer provided between the first semiconductor layer and the plurality of first semiconductor pillar regions and between the first semiconductor layer and the second semiconductor pillar region.
3 . The device according to claim 1 , wherein
the plurality of first semiconductor pillar regions are stripe-shaped regions extending in a direction orthogonal to the first direction and the second direction on the first semiconductor layer, and
the second semiconductor pillar region is a stripe-shaped region contiguous to the plurality of first semiconductor pillar regions on the first semiconductor layer.
4 . The device according to claim 1 , wherein
the second semiconductor pillar region is a rectangular region on the first semiconductor layer, and
the plurality of first semiconductor pillar regions are rectangular regions surrounding the second semiconductor pillar region on the first semiconductor layer.
5 . The device according to claim 1 , wherein
the second region is provided between two of the first regions in the second direction, and
the fourth region is provided between two of the third regions in the second direction.
6 . The device according to claim 1 , further comprising:
a plurality of base layers of the second conductivity type, each of the plurality of base layers being formed on the second semiconductor pillar region and having opposite ends formed on the plurality of first semiconductor pillar regions contiguous to the second semiconductor pillar region;
a plurality of source layer of the first or second conductivity type formed on the plurality of base layers and connected to the second electrode;
a pillar region of the first conductivity type formed on the plurality of first semiconductor pillar regions and between adjacent ones of the plurality of base layers; and
a gate electrode provided on the plurality of base layers and the source layer through an insulating film.
7 . The device according to claim 1 , further comprising:
a first semiconductor region of the second conductivity type formed on the second semiconductor pillar region;
a second semiconductor region of the first conductivity type formed on the plurality of first semiconductor pillar regions and the first semiconductor region;
a base layer of the second conductivity type formed on the second semiconductor region;
a source layer of the first conductivity type formed on the base layer and connected to the second electrode; and
a gate electrode facing the source layer and the base layer through an insulating film in the direction orthogonal to the direction from the first electrode toward the second electrode.
8 . The device according to claim 7 , wherein
the first semiconductor region includes
a first portion not connected to the base layer, and
a second portion connected to the base layer.
9 . The device according to claim 1 , further comprising:
a first semiconductor region of the first conductivity type formed on the first semiconductor pillar regions;
a second semiconductor region of the second conductivity type formed on the second semiconductor pillar region;
a base layer of the second conductivity type formed on the first semiconductor region and the second semiconductor region;
a source layer of the first conductivity type formed on the base layer and connected to the second electrode; and
a gate electrode facing the source layer and the base layer through an insulating film in the direction orthogonal to the direction from the first electrode toward the second electrode,
the insulating film protruding toward the second electrode.
10 . The device according to claim 1 , further comprising:
a first semiconductor region of the second conductivity type formed on the second semiconductor pillar region;
a second semiconductor region of the second conductivity type formed over the second region and a part of the first region contiguous to the second region;
a third semiconductor region of the first conductivity type formed on the second semiconductor region;
a base layer of the second conductivity type formed on the first semiconductor region and the third semiconductor region;
a source layer of the first conductivity type formed on the base layer; and
a gate electrode facing the base layer and the source layer through an insulating film in the direction orthogonal to the direction from the first electrode toward the second electrode.
11 . The device according to claim 10 , wherein
the second semiconductor region includes
a first portion not connected to the first semiconductor region, and
a second portion connected to the first semiconductor region.
12 . The device according to claim 1 , wherein
in the second direction orthogonal to the first direction from the first electrode toward the second electrode, a width of the first region and a width of the third region are substantially the same, and a width of the second region and a width of the fourth region are substantially the same.
13 . The device according to claim 1 , wherein
in the second direction orthogonal to the first direction from the first electrode toward the second electrode, a width of the first region is half a width of the second region, and a width of the third region is half a width of the fourth region.
14 . A silicon carbide semiconductor device comprising:
a first electrode;
a second electrode;
a first semiconductor layer provided between the first electrode and the second electrode and containing silicon carbide;
a plurality of first semiconductor pillar regions of a first conductivity type containing silicon carbide, the plurality of first semiconductor pillar regions being provided between the first semiconductor layer and the second electrode, the plurality of first semiconductor pillar regions each including:
a first region having a first impurity concentration;
a second region provided together with the first region in a second direction orthogonal to a first direction from the first electrode toward the second electrode and having a second impurity concentration higher than the first impurity concentration; and
a second semiconductor pillar region of a second conductivity type containing silicon carbide, the second semiconductor pillar region being provided between the first semiconductor layer and the second electrode and located between the plurality of first semiconductor pillar regions in the second direction, wherein:
a concentration difference between the first impurity concentration of the first region and the second impurity concentration of the second region is stepwise, and a concentration difference between a third impurity concentration of a third region and a fourth impurity concentration of a fourth region is stepwise.