Light emitting diodes with segmented anodes by pixel
A light emitting diode (LED) device comprises a plurality of pixels on a backplane, each pixel comprising: semiconductor layers, which include an N-type layer, an active region, and a P-type layer; a cathode electrically contacting the N-type layer; an anode comprising anode segments electrically contacting respective portions of the P-type layer; one or more dielectric materials insulating: the active region and the P-type layer from the cathode, the anode segments from each other, and the anode segments from the cathode; and a plurality of interconnects, each respective interconnect affixing a respective anode segment to the backplane. Methods of making and use the devices are also provided.
1. A light emitting diode (LED) device comprising:
a plurality of pixels on a backplane, each pixel comprising:
semiconductor layers, which include an N-type layer, an active region, and a P-type layer;
a cathode electrically contacting the N-type layer;
an anode comprising anode segments electrically contacting respective portions of the P-type layer;
one or more dielectric materials insulating: the active region and the P-type layer from the cathode, the anode segments from each other, and the anode segments from the cathode; and
a plurality of interconnects, each respective interconnect affixing a respective anode segment to the backplane.
2. The LED device of claim 1 , wherein each of the anode segments is configured to localize current-within the respective portion of the P-type layer during use.
3. The LED device of claim 1 , wherein each of the anode segments comprises: a P-contact layer and a bonding material.
4. The LED device of claim 1 , wherein upon detection of a defect in a pixel, the defect being associated with a respective defect anode segment, the interconnect for the respective defect anode segment comprises an electrically insulating material.
5. The LED device of claim 1 , wherein in the absence of detection of a defect in a pixel for a respective anode segment, the interconnect for the respective anode segment comprises a conducting material.
6. The LED device of claim 1 further comprising a circuit arrangement configured to individually control each anode segment.
7. The LED device of claim 6 , wherein the plurality of interconnects comprises a conducting material, and upon detection of a defect in a pixel, the defect being associated with a respective defect anode segment, the circuit arrangement provides an electrical isolation of the respective defect anode segment.
8. The LED device of claim 7 , wherein the electrical isolation comprises a blown fusible link to the respective defect anode segment.
9. The LED device of claim 7 , wherein the electrical isolation comprises a closed gate to the respective defect anode segment.
10. The LED device of claim 1 , wherein each pixel is a micro-light emitting diode (uLED) having at least one characteristic dimension of less than 100 micrometers, the character dimension being selected from the group consisting of: height, width, depth, thickness, and combinations thereof.
11. A method of manufacturing light emitting diode (LED) device of claim 1 , the method comprising:
preparing the semiconductor layers including the N-type layer, the active region, and the P-type layer;
patterning the semiconductor layers to form a plurality of mesas;
depositing and patterning the one or more dielectric materials;
depositing electrode material to form the cathode, and the anode segments;
depositing the plurality of interconnects onto respective anode segments;
affixing the plurality of interconnects to the backplane,
wherein the one or more dielectric materials insulates: the active region and the P-type layer from the cathode, the anode segments from each other, and the anode segments from the cathode.
12. The method of claim 11 , wherein each of the anode segments is configured to localize current of within the respective portion of the P-type layer during use.
13. The method of claim 11 , wherein each of the anode segments comprises: a P-contact layer and a bonding material.
14. The method of claim 11 further comprising detecting one or more defects in the pixels, each defect being associated with a respective defect anode segment, and utilizing an electrically insulating material as the interconnect for the respective defect anode segment.
15. The method of claim 11 , wherein in the absence of detecting a defect in a pixel for a respective anode segment, utilizing a conducting material as the interconnect for the respective anode segment.
16. The method of claim 11 further comprising configuring a circuit arrangement of the backplane to individually control each anode segment.
17. The method of claim 16 further comprising utilizing a metal material as the interconnects, detecting one or more defects in the pixels being associated with a respective defect anode segment, and electrically isolating each respective defect anode segment.
18. The method of claim 17 , wherein the electrically isolating comprises blowing a fusible link to the respective defect anode segment.
19. The method of claim 17 , wherein the electrically isolating comprises closing a gate to the respective defect anode segment.
20. The method of claim 11 , wherein each pixel has at least one characteristic dimension of less than 100 micrometers, the character dimension being selected from the group consisting of: height, width, depth, thickness, and combinations thereof.