Managing data compaction for zones in memory devices
A system and method for managing data compaction in zones in memory devices. An example method includes receiving, by a processor of a memory device, receiving, by a processing device, a write command; identifying a zoned namespace (ZNS) zone specified with the write command; selecting a first subset of memory pages of a first management unit that is configured to store a first number of bits per memory cell, wherein the first management unit is associated with the ZNS zone; accessing a capacity counter associated with the ZNS zone that reflects an amount of data currently stored to the ZNS zone; and responsive to determining that the capacity counter satisfies a threshold criterion, causing the memory device to copy the data associated with the ZNS zone from the first subset of memory pages to a second subset of memory pages of a second management unit of the memory device.
1. A method comprising:
receiving, by a processing device, a write command;
identifying a zoned namespace (ZNS) zone specified with the write command;
selecting a first subset of memory pages of a first management unit of a memory device that is configured to store a first number of bits per memory cell, wherein the first management unit is associated with the ZNS zone;
accessing a capacity counter associated with the ZNS zone wherein the capacity counter reflects an amount of data currently stored on a set of blocks associated with the ZNS zone; and
responsive to determining that the capacity counter satisfies a threshold criterion, causing the memory device to copy the data associated with the ZNS zone from the first subset of memory pages to a second subset of memory pages of a second management unit of the memory device, wherein the second subset of memory pages is configured to store a second number of bits per memory cell, wherein the second number of bits per memory cell exceeds the first number of bits per memory cell.
2. The method of claim 1 , further comprising:
copying remaining data from the first management unit to a third subset of memory cells associated with a third management unit of the memory device that are configured to store the first number of bits per memory cell.
3. The method of claim 1 , further comprising:
identifying, in a metadata table, un-migrated data associated with the ZNS zone, wherein the un-migrated data was not copied from the first set of memory cells to the second set of memory cells.
4. The method of claim 1 , wherein the threshold criterion is set in view of a ratio of storage capacity of the second management unit.
5. The method of claim 1 , wherein the first set of memory cells are configured as single-level cell (SLC) memory.
6. The method of claim 1 , wherein the second set of memory cells are configured as quad-level cell (QLC) memory.
7. The method of claim 1 , wherein the management unit is configured to store data from a single ZNS zone.
8. The method of claim 1 , wherein the management unit is configured to store data from a subset of ZNS zones.
9. A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
receiving, by a processing device, a write command;
identifying a zoned namespace (ZNS) zone specified with the write command;
selecting a first subset of memory pages of a first management unit of the memory device that is configured to store a first number of bits per memory cell, wherein the first management unit is associated with the ZNS zone;
accessing a capacity counter associated with the ZNS zone wherein the capacity counter reflects an amount of data currently stored on a set of blocks associated with the ZNS zone; and
responsive to determining that the capacity counter satisfies a threshold criterion, causing the memory device to copy the data associated with the ZNS zone from the first subset of memory pages to a second subset of memory pages of a second management unit of the memory device, wherein the second subset of memory pages is configured to store a second number of bits per memory cell, wherein the second number of bits per memory cell exceeds the first number of bits per memory cell.
10. The system of claim 9 , wherein the operations further comprise:
copying remaining data from the first management unit to a third subset of memory cells associated with a third management unit of the memory device that are configured to store the first number of bits per memory cell.
11. The system of claim 9 , wherein the operations further comprise:
identifying, in a metadata table, un-migrated data associated with the ZNS zone, wherein the un-migrated data was not copied from the first set of memory cells to the second set of memory cells.
12. The system of claim 9 , wherein the threshold criterion is set in view of a ratio of storage capacity of the second management unit.
13. The system of claim 9 , wherein the first set of memory cells are configured as single-level cell (SLC) memory.
14. The system of claim 9 , wherein the second set of memory cells are configured as quad-level cell (QLC) memory.
15. The system of claim 9 , wherein the management unit is configured to store data from a single ZNS zone.
16. The system of claim 9 , wherein the management unit is configured to store data from a subset of ZNS zones.
17. A non-transitory computer-readable medium storing instructions, which when executed by a processing device, cause the processing device to perform operations comprising:
receiving, by a processing device, a write command;
identifying a zoned namespace (ZNS) zone specified with the write command;
selecting a first subset of memory pages of a first management unit of a memory device that is configured to store a first number of bits per memory cell, wherein the first management unit is associated with the ZNS zone;
accessing a capacity counter associated with the ZNS zone wherein the capacity counter reflects an amount of data currently stored on a set of blocks associated with the ZNS zone; and
responsive to determining that the capacity counter satisfies a threshold criterion, causing the memory device to copy the data associated with the ZNS zone from the first subset of memory pages to a second subset of memory pages of a second management unit of the memory device, wherein the second subset of memory pages is configured to store a second number of bits per memory cell, wherein the second number of bits per memory cell exceeds the first number of bits per memory cell.
18. The non-transitory computer-readable medium of claim 17 , wherein the operations further comprise:
copying remaining data from the first management unit to a third subset of memory cells associated with a third management unit of the memory device that are configured to store the first number of bits per memory cell.
19. The non-transitory computer-readable medium of claim 17 , wherein the operations further comprise:
identifying, in a metadata table, un-migrated data associated with the ZNS zone, wherein the un-migrated data was not copied from the first set of memory cells to the second set of memory cells.
20. The non-transitory computer-readable medium of claim 17 , wherein the threshold criterion is set in view of a ratio of storage capacity of the second management unit.