Copper plating solution and negative electrode composite current collector prepared using same
This application provides a copper plating solution for a composite current collector, including a leveling agent represented by a general formula (1) where an anion X is F − , Cl − , or Br − ; R 1 , R 2 , and R 3 are each independently selected from O or S; and R 4 , R 5 , and R 6 are each independently selected from hydrogen, a substituted or unsubstituted alkyl, a substituted or unsubstituted vinyl, a substituted or unsubstituted aryl, and a substituted or unsubstituted heteroaryl.
1. A copper plating solution for a composite current collector, comprising a leveling agent represented by a general formula (
wherein an anion X is F, Cl, or Br,
R 1 , R 2 , and R 3 are each independently selected from O or S; and
R 4 , R 5 , and R 6 are each independently selected from hydrogen, a substituted or unsubstituted alkyl, a substituted or unsubstituted vinyl, a substituted, or unsubstituted aqi, and a substituted or unsubstituted heteroaryl.
2. The copper plating solution according to claim 1 , wherein R 4 , R 5 , and R 6 are each independently selected from hydrogen, a substituted or unsubstituted alkyl having carbon atoms, a substituted or unsubstituted vinyl having 2-6 carbon atoms, and a substituted or unsubstituted pyrimidyl.
3. The copper plating solution according to claim 1 , further comprising copper sulfate, sulfuric acid, hydrochloric acid, a brightener, a moistening agent, and deionized water.
4. The copper plating solution according to claim 3 , characterized in that
the brightener is a compound containing a disulfide bond, a sulfonic acid group, or a sulfhydryl group.
5. The copper plating solution according to claim 4 , wherein the brightener is one or two of bis-(sodium sulfopropyl)-disulfide and sodium 3-mercaptopropanesulphonate.
6. The copper plating solution according to claim 3 , wherein the moistening agent is at least one of polyethylene glycol and polypropylene glycol.
7. The copper plating solution according to claim 6 , wherein the polyethylene glycol has a number-average molecular weight of 4000-15000, and the polypropylene glycol has a number-average molecular weight of 5000-20000.
8. The copper plating solution according to claim 1 , further comprising a grain refiner.
9. The copper plating solution according to claim 8 , wherein the grain refiner is at least one of acetaldehyde and ethylene diamine tetraacetic acid.
10. The copper plating solution according to claim 1 , wherein each liter of copper plating solution contains 60-120 g/L of copper sulfate, 80-110 mL/L of 98% sulfuric acid, 40-90 ppm of hydrochloric acid measured in chloride ions, 2-12 mL/L of the brightener, 1-4 mL/L of the leveling agent, 0.5-2 mL/L of the moistening agent, 0.01-0.2 mL/L of the grain refiner, and deionized water for the rest part.
11. The copper plating solution according to claim 1 , wherein an applicable temperature range of the copper plating solution is 20-50° C., optionally 20-45° C., and further optionally 20-35° C.
12. The copper plating solution according to claim 1 , wherein an applicable cathode current density of the copper plating solution is 1-20 A/dm 2 , optionally 1-15 A/dm 2 , and further optionally 1-10 A/dm 2 .
13. The copper plating solution according to claim 1 , wherein an applicable anode current density of the copper plating solution is 0.5-3 A/dm 2 .
14. The copper plating solution according to claim 1 , wherein the copper plating solution has a pH value ranging from 0.5 to 4.
15. The copper plating solution according to claim 1 , characterized in that the leveling agent is