Light emitting diode devices with bonding and/or ohmic contact-reflective material

1 . A light emitting diode (LED) device comprising:

semiconductor layers including an N-type layer, an active region, and a P-type layer;

an N-bonding material electrically contacting the N-type layer, the N-bonding material being multi-layered and comprising:

an ohmic contact layer directly on and electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer;

a reflective layer directly on and electrically contacting the ohmic contact layer;

a first N-bonding material barrier layer electrically contacting the reflective layer;

a current carrying layer electrically contacting the first N-bonding material barrier layer; and

a second N-bonding material barrier layer electrically contacting the current carrying layer;

a P-bonding material electrically contacting the P-type layer and being isolated from the N-bonding material; and

a first dielectric material which insulates the P-type layer and the active region from the N-bonding material.

2 . The LED device of claim 1 , wherein a thickness of the ohmic contact layer is less than or equal to 20% of a thickness of the reflective layer.

3 . The LED device of claim 1 , wherein:

the ohmic contact layer comprises: aluminum (Al), titanium (Ti), or aluminum-doped zinc oxide (AZO),

the reflective layer comprises silver (Ag) or gold (Au);

the first and second N-bonding material barrier layers each independently comprise: titanium (Ti), chromium (Cr), platinum (Pt), cobalt (Co), palladium (Pd), or tungsten (W), and

the current carrying layer comprises: copper (Cu), gold (Au), or aluminum (Al).

4 . The LED device of claim 3 , wherein the N-type layer comprises n-GaN.

5 . The LED device of claim 1 , wherein:

the ohmic contact layer comprises a thickness in a range of greater than or equal to 5 Å to less than or equal to 200 Å,

the reflective layer comprises a thickness of greater than or equal to 1000 Å,

the first and second N-bonding material barrier layers each independently comprise a thickness of greater than or equal to 1000 Å, and the current carrying layer comprises a thickness of greater than or equal to 5000 Å.

6 . The LED device of claim 1 , wherein the N-bonding material further comprises a first N-bonding material migration suppression layer electrically contacting the reflective layer and the first material barrier layer; and a second N-bonding material migration suppression layer electrically contacting the current carrying layer and the second material barrier layer.

7 . The LED device of claim 6 , wherein the first and second N-bonding material migration suppression layers each independently comprise nickel (Ni) or palladium (Pd), and/or independently comprise a thickness in a range of greater than or equal to 50 Å to less than or equal to 1000 Å.

8 . The LED device of claim 1 , wherein the P-bonding material is the same as the N-bonding material.

9 . The LED device of claim 1 , wherein the semiconductor layers are on a substrate and the N-bonding material directly contacts the N-type layer, and the device further comprises an N-pad electrically contacting the N-bonding layer and a P-pad electrically contacting the P-bonding layer, and a second dielectric material which insulates the N-bonding material from the P-bonding material.

10 . The LED device of claim 9 , which is in a form of a chip scale package.

11 . The LED device of claim 1 , which is in a form of a monolithic array, wherein a first portion of the N-type layer forms a monolithic body, and a second portion of the N-type layer in combination with the active region and the P-type layer form a plurality of mesas integral to the monolithic body, the N-bonding material directly contacts the first portion of the N-type layer, and each of the mesas has at least one characteristic dimension of less than 100 micrometers, the character dimension being selected from the group consisting of: height, width, and depth.

12 . A method of manufacturing a light emitting diode (LED) device comprising:

preparing a plurality of semiconductor layers including an N-type layer, an active region, and a P-type layer;

exposing the N-type layer;

preparing an N-bonding material contacting the N-type layer by:

depositing an ohmic contact layer directly on and electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer;

depositing a reflective layer directly on and electrically contacting the ohmic contact layer;

depositing a first N-bonding material barrier layer electrically contacting the reflective layer;

depositing a current carrying layer electrically contacting the first material barrier layer; and

depositing a second N-bonding material barrier layer electrically contacting the current carrying layer; and

depositing a dielectric material which insulates the P-type layer and the active region from the N-bonding material.

13 . The method of claim 12 , wherein the N-type layer comprises n-GaN, and the ohmic contact layer comprises: aluminum (AI), titanium (Ti), or aluminum-doped zinc oxide (AZO); the reflective layer comprises silver (Ag) or gold (Au); the first and second material barrier layers each independently comprise: titanium (Ti), chromium (Cr), platinum (Pt), cobalt (Co), palladium (Pd), or tungsten (W); and the current carrying layer comprises: copper (Cu), gold (Au), or aluminum (Al).

14 . The method of claim 12 , wherein:

the ohmic contact layer comprises a thickness in a range of greater than or equal to 5 Å to less than or equal to 200 Å,

the reflective layer comprises a thickness of greater than or equal to 1000 Å,

the first and second material barrier layers each independently comprise a thickness of greater than or equal to 1000 Å, and

the current carrying layer comprises a thickness of greater than or equal to 5000 Å.

15 . The method of claim 12 further comprising: depositing a first material migration suppression layer electrically contacting the reflective layer and the first material barrier layer; and/or a second material migration suppression layer electrically contacting the current carrying layer and the second material barrier layer.

16 . The method of claim 15 , wherein the first and second material migration suppression layers each independently comprise nickel (Ni) or palladium (Pd), and/or independently comprise a thickness in a range of greater than or equal to 50 Å to less than or equal to 1000 Å.

17 . The method of claim 12 , wherein a P-bonding material is also prepared contacting the P-type layer by depositing the ohmic contact layer electrically contacting the P-type layer, depositing the reflective layer electrically contacting the ohmic contact layer, depositing the first N-bonding material barrier layer electrically contacting the reflective layer, depositing the current carrying layer electrically contacting the first material barrier layer.

18 . The method of claim 12 , wherein a first portion of the N-type layer forms a monolithic body, and a second portion of the N-type layer in combination with the active region and the P-type layer form a plurality of mesas integral to the monolithic body, the N-bonding material directly contacts the first portion of the N-type layer, and each of the mesas has at least one characteristic dimension of less than 100 micrometers, the character dimension being selected from the group consisting of: height, width, and depth.