Microelectromechanical systems (MEMS) rectifier and storage element for energy harvesting

1. An electronic device comprising a microelectromechanical system (MEMS) rectifier, the MEMS rectifier including:

a mainboard having:

one or more radiofrequency (RF) inputs configured to receive an RF signal; and

a first electrical contact;

a sub-board positioned parallel to the mainboard with a gap in-between, the sub-board having:

a thin film piezoelectric layer;

a second electrical contact positioned opposite the first electrical contact; and

a ground plane;

wherein the sub-board is configured to vibrate as the RF signal is received at the one or more RF inputs; and

wherein the thin film piezoelectric layer is configured to generate energy due to the vibration and piezoelectric properties of the thin film piezoelectric layer.

2. The electronic device of claim 1 , further comprising an energy storage device that is configured to receive and store the generated energy.

3. The electronic device of claim 2 , wherein the energy storage device includes one or more capacitors.

4. The electronic device of claim 1 , wherein the generated energy is configured to flow from the second electrical contact to the first electrical contact when the vibration of the sub-board causes the second electrical contact to come into contact with the first electrical contact.

5. The electronic device of claim 4 , wherein a separate electronic device is connected to the first electrical contact and is configured to receive electric charge from the MEMS rectifier via the first electrical contact.

6. The electronic device of claim 1 , wherein the sub-board is configured to vibrate at a resonant frequency within a particular frequency band, and the RF signal is also within the particular frequency band.

7. The electronic device of claim 1 , wherein the gap is a vacuum.

8. The electronic device of claim 1 , wherein the MEMS rectifier is included in a monolithic chip.

9. A method of harvesting radiofrequency (RF) energy comprising:

receiving, by one or more RF inputs of a microelectromechanical system (MEMS) rectifier, a RF signal;

vibrating a sub-board of the MEMS rectifier as the RF signal is received by the one or more RF inputs, the sub-board including a piezoelectric material;

generating energy due to the vibration of the sub-board and properties of the piezoelectric materials; and

storing the generated energy, wherein the storing of the generated energy is in a mechanical domain.

10. The method of claim 9 , further comprising:

causing a first electrical contact on the sub-board to come into contact with a second electrical contact on a mainboard of the MEMS rectifier using the vibration of the sub-board, wherein the mainboard is positioned parallel to the sub-board with a gap in-between; and

upon contact of the first electrical contact with the second electrical contact, generating a current using the generated energy.

11. The method of claim 10 , wherein the causing the first electrical contact to come into contact with the second electrical contact includes increasing an amplitude of the vibration of the sub-board.

12. The method of claim 10 , further comprising powering an electronic device using the generated current.

13. The method of claim 12 , further comprising processing the generated current to accumulate charge before powering the electronic device.

14. The method of claim 12 , further comprising processing the generated current to meet requirements for powering the electronic device.

15. The method of claim 9 , wherein the storing of the generated energy is in an energy storage device.

16. The method of claim 15 , wherein the energy storage device includes one or more capacitors.

17. A method of manufacturing a microelectromechanical system (MEMS) rectifier, the method comprising:

mounting a first electrical contact and one or more radiofrequency (RF) inputs onto a mainboard;

mounting a second electrical contact to a sub-board, the sub-board capable of vibration, the sub-board comprising a ground plane and a thin film piezoelectric layer;

attaching the sub-board to the mainboard with a gap in-between in a position where the second electrical contact is opposite the first electrical contact across the gap and the sub-board is parallel to the mainboard.

18. The method of claim 17 , wherein the attaching of the sub-board to the mainboard includes configuring the sub-board to vibrate at a resonant frequency within a frequency band.

19. The method of claim 17 , further comprising fabricating at least a portion of the sub-board or the mainboard using an integrated circuit manufacturing process.