Display device
Display devices for displaying a pattern are disclosed. In one arrangement, a pixel element having a layered structure is provided. The layered structure comprises at least one phase change material layer thermally switchable between at least a stable high extinction coefficient state and a stable low extinction coefficient state. A ratio of a mean average over the visible spectrum of the extinction coefficient of the phase change material layer in the high extinction coefficient state to a mean average over the visible spectrum of the extinction coefficient of the phase change material layer in the low extinction coefficient state is greater than 3.0. A mean average over the visible spectrum of the extinction coefficient in the high extinction state is less than 1.0.
1 . A display device for displaying a pattern, comprising a pixel element having a layered structure comprising three different phase change material layers, wherein each of the three different phase change material layers are switchable between a high extinction coefficient state and a low extinction coefficient state, and wherein two or more of the three different phase change material layers differ from each other only by doping, wherein preferably the doping comprises either or both of oxygen and nitrogen as dopant,
and wherein at least one phase change material layer is thermally switchable between a stable high extinction coefficient state and a stable low extinction coefficient state, wherein, for the at least one phase change material layer:
a ratio of a mean average, over the visible spectrum, of the extinction coefficient of the at least one phase change material layer in the stable high extinction coefficient state to a mean average, over the visible spectrum, of the extinction coefficient of the at least one phase change material layer in the stable low extinction coefficient state is greater than 3.0; and
the mean average, over the visible spectrum, of the extinction coefficient of the at least one phase change material layer in the stable high extinction state is less than 1.0.
2 . The device of claim 1 , further comprising a switching arrangement capable of applying heating to the pixel element according to each of a plurality of different heating profiles.
3 . The device of claim 2 , wherein, within the pixel element, each phase change material layer is in thermal contact with the other phase change material layers such that applying heating causes a substantially identical variation of temperature in each of the phase change material layers in the pixel element.
4 . The device of claim 2 , wherein each of the three different phase change material layers has a heating profile, and a heating profile of one of the three different phase change material layers allows switching of that phase change material layer without switching of the other two phase change material layers in the pixel element.
5 . The device of claim 1 , wherein the three different phase change material layers are configured to be independently switchable to allow full colour control and, independently of the full colour control, full reflectivity control.
6 . The device of claim 1 , wherein each of one or more of the phase change material layers comprises one or more of the following:
(Ag 2 Se) 1-x (Sb 2 Se 3 ) x wherein, preferably, 0.5<x;
(Ag 2 Se) 1-x (Sb 2 Se 3 ) x wherein, preferably, 0.5<x<0.7;
AgSbSe 2 ;
AgSbTe 2-y Se y wherein, preferably, 2>y>0.5;
Ag(Sb 1-z Bi z )Te 2-y Se y wherein, preferably, 2>y>0.5 and 1>z>0;
(Te 80 Sn 15 Ge 5 ) 1-x S x wherein, preferably, 0<x<0.2;
(Te 80 Sn 15 Ge 5 ) 1-x Se x wherein, preferably, 0<x<0.4;
(Te 80 Sn 15 Bi 5 ) 1-x S x wherein, preferably, 0<x<0.2;
(Te 80 Sn 15 Bi 5 ) 1-x Se x wherein, preferably, 0<x<0.4.
7 . The device of claim 1 , wherein each of one or more of the phase change material layers comprises one or more of the following: Sb 2 S 3 ; Ge 2 Sb 2 Se 4 Te; GeSbTeO; GeSnTeO; GeSnSbTeO; TeBiSnN; TeBiSnS; TeBiSnO; SeSnBi; SeSnBiO; SeSnGeO.
8 . The device of claim 1 , wherein the high extinction coefficient state is substantially crystalline and the low extinction coefficient state is substantially amorphous.
9 . The device of claim 1 , wherein the pixel element further comprises a reflective layer.
10 . The device of claim 9 , wherein the pixel element further comprises a passive spacer layer.
11 . A display device for displaying a pattern, comprising a pixel element having a layered structure including two identical phase change material layers and a different phase change material layer positioned in between the two identical phase change material layers, the layered structure comprising at least one phase change material layer that is thermally switchable between a stable high extinction coefficient state and a stable low extinction coefficient state,
wherein, for the at least one phase change material layer:
a ratio of: a mean average, over the visible spectrum, of the extinction coefficient of the phase change material layer in the stable high extinction coefficient state to a mean average, over the visible spectrum, of the extinction coefficient of the phase change material layer in the stable low extinction coefficient state is greater than 3.0; and
the mean average, over the visible spectrum, of the extinction coefficient of the phase change material layer in the stable high extinction state is less than 1.0.
12 . The device of claim 11 , wherein the two identical phase change material layers and the different phase change material layer differ from each other only by doping, wherein preferably the doping comprises either or both of oxygen and nitrogen as dopant.
13 . The device of claim 11 , wherein each of one or more of the phase change material layers comprises one or more of the following:
(Ag 2 Se) 1-x (Sb 2 Se 3 ) x wherein, preferably, 0.5<x;
(Ag 2 Se) 1-x (Sb 2 Se 3 ) x wherein, preferably, 0.5<x<0.7;
AgSbSe 2 ;
AgSbTe 2-y Se y wherein, preferably, 2>y>0.5;
Ag(Sb 1-z Bi z )Te 2-y Se y wherein, preferably, 2>y>0.5 and 1>z>0;
(Te 80 Sn 15 Ge 5 ) 1-x S x wherein, preferably, 0<x<0.2;
(Te 80 Sn 15 Ge 5 ) 1-x Se x wherein, preferably, 0<x<0.4;
(Te 80 Sn 15 Bi 5 ) 1-x S x wherein, preferably, 0<x<0.2;
(Te 80 Sn 15 Bi 5 ) 1-x Se x wherein, preferably, 0<x<0.4.
14 . The device of claim 11 , wherein each of one or more of the phase change material layers comprises one or more of the following: Sb 2 S 3 ; Ge 2 Sb 2 Se 4 Te; GeSbTeO; GeSnTeO; GeSnSbTeO; TeBiSnN; TeBiSnS; TeBiSnO; SeSnBi; SeSnBiO; SeSnGeO.
15 . The device of claim 11 , wherein the high extinction coefficient state is substantially crystalline and the low extinction coefficient state is substantially amorphous.
16 . The device of claim 11 , wherein the pixel element further comprises a reflective layer.
17 . The device of claim 16 , wherein the pixel element further comprises a passive spacer layer.