Granted Patent B2

US 12,672,401 · App. 17/918,378 · Granted Jun 30, 2026

Inventors: Robert Armitage (Cupertino, CA); Isaac Wildeson (Nashua, NH)

Assignee: LUMILEDS SINGAPORE PTE. LTD.

H10H20/84H10H20/825H10H20/811H10H20/824

Abstract

Claims (10)

1 . A red LED, comprising:

a semiconductor LED layer having an active InGaN layer with an emission spectrum having a peak wavelength in a range of from 580 nm to 620 nm; and

a filter positioned over the semiconductor LED layer, the filter including one or more of an absorptive material, a polycrystalline II-VI semiconductor alloy, at least one metallic material, or a wavelength selective mirror, and the filter configured to filter shorter wavelengths of the emission spectrum of the active InGaN layer and shift the peak wavelength by between 5 nm to 20 nm to a longer wavelength.

2 . The LED of claim 1 , further comprising a transparent conductive layer attached or a transparent sapphire layer disposed between the semiconductor LED layer and the filter.

3 . The LED of claim 1 , wherein the red LED is a microLED.

4 . The LED of claim 1 , wherein the red LED forms a part of an RGB display.

5 . The LED of claim 1 , wherein the polycrystalline II-VI semiconductor alloy comprises one or more of cadmium (Cd), selenium (Se), sulfur(S), zinc (Zn), or tellurium (Te).

6 . The LED of claim 1 , wherein the polycrystalline II-VI semiconductor alloy has a thickness in a range of from 200 nm to 2000 nm.

7 . The LED of claim 1 , wherein the at least one reflective metallic material comprises one or more of Au, Au—Cu alloys, TIN, HIN, ZrN, Ni, or CrN.

8 . The LED of claim 1 , wherein the wavelength selective mirror comprises one or more of SiN x , TiO 2 , SiO 2 , or aluminum indium nitride (AlInN), or aluminum indium gallium nitride (AlInGaN).

Assignments (5)

Continuity (2)

References Cited (162)