COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR POLISHING
A composition for chemical mechanical polishing and a polishing method allow a semiconductor substrate containing at least one of a polysilicon film and a silicon nitride film to be polished at a high speed, while being capable of reducing the incidence of surface defects in the polished surface. The composition for chemical mechanical polishing contains (A) abrasive grains having plural protrusions on their surfaces and (B) a liquid medium, wherein the absolute value of the zeta-potential of the component (A) in the composition for chemical mechanical polishing is 10 mV or more.
1 . A composition for chemical mechanical polishing comprising:
(A) abrasive grains having a plurality of protrusions on their surfaces; and
(B) a liquid medium,
wherein an absolute value of a zeta-potential of the component (A) in the composition for chemical mechanical polishing is 10 mV or more.
2 . The composition for chemical mechanical polishing according to claim 1 , wherein the component (A) has a functional group represented by general formula (1),
—SO 3 − M + (1)
wherein M + represents a monovalent cation.
3 . The composition for chemical mechanical polishing according to claim 2 , wherein the zeta-potential of the component (A) in the composition for chemical mechanical polishing is −10 mV or lower.
4 . The composition for chemical mechanical polishing according to claim 1 , wherein the component (A) has a functional group represented by general formula (2),
—COO − M + (2)
wherein M + represents a monovalent cation.
5 . The composition for chemical mechanical polishing according to claim 4 , wherein the zeta-potential of the component (A) in the composition for chemical mechanical polishing is −10 mV or lower.
6 . The composition for chemical mechanical polishing according to claim 1 ,
wherein the component (A) has a functional group represented by general formula (3) or general formula (4),
—NR 1 R 2 (3)
—N + R 1 R 2 R 3 M − (4)
wherein in general formulas (3) and (4), R 1 , R 2 , and R 3 each independently represent a hydrogen atom or a substituted or unsubstituted hydrocarbon group, and M − represents an anion.
7 . The composition for chemical mechanical polishing according to claim 6 , wherein the zeta-potential of the component (A) in the composition for chemical mechanical polishing is +10 mV or higher.
8 . The composition for chemical mechanical polishing according to claim 1 , of which a pH is 1 or more and 6 or less.
9 . The composition for chemical mechanical polishing according to claim 1 , wherein a content of the component (A) is 0.005 mass % or more and 15 mass % or less with respect to a total mass of the composition for chemical mechanical polishing.
10 . The composition for chemical mechanical polishing according to claim 1 , further comprising at least one selected from the group consisting of water-soluble polymers and phosphoric acid esters.
11 . A polishing method, comprising a step of polishing a semiconductor substrate using the composition for chemical mechanical polishing according to claim 1 .
12 . The polishing method according to claim 11 , wherein the semiconductor substrate has a portion containing at least one of a polysilicon film and a silicon nitride film.