IP Library › Granted Patent US 12,372,717
Granted Patent B2
US 12,372,717 · App. 17/936,939 · Granted Jul 29, 2025

Structure including hybrid plasmonic waveguide using metal silicide layer

Inventors: Yusheng Bian (Ballston Lake, NY); Ryan William Sporer (Mechanicville, NY)
Assignee: GlobalFoundries U.S. Inc.
G02B6/12004G02B6/13G02B2006/12061
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Quick Facts
Patent No.
US 12,372,717
App. No.
17/936,939
Granted
Jul 29, 2025
Kind
B2
Abstract

A structure or PIC structure includes a hybrid plasmonic (HP) waveguide. The HP waveguide includes a waveguide core, and a metal silicide layer contacting the waveguide core. The metal silicide layer replaces noble metals typically provided in hybrid plasmonic waveguides, providing improved optical signal containment characteristics. The metal silicide layer is also compatible with CMOS fabrication techniques, and capable of additional scaling with other CMOS structures. The HP waveguide also has a reduce form factor compared to conventional HP waveguides, providing room for more waveguides closer together.

Claims (33)

1. A structure comprising:

a hybrid plasmonic waveguide including:

a first waveguide core; and

a metal silicide layer contacting the first waveguide core; and

a dielectric waveguide including a second waveguide core including a dielectric, a dielectric waveguide part of the hybrid plasmonic waveguide, wherein the dielectric waveguide is devoid of the metal silicide layer contacting the second waveguide core thereof and the dielectric waveguide is adiabatically operatively coupled to the first waveguide core of the hybrid plasmonic waveguide.

2. The structure of claim 1 , wherein the first waveguide core includes silicon and the metal silicide layer includes one of nickel silicide, titanium silicide and cobalt silicide.

3. The structure of claim 1 , wherein the first waveguide core includes silicon nitride and the metal silicide layer includes one of: a nickel silicide layer on a nickel polysilicide layer, titanium silicide layer on titanium polysilicide layer, and a cobalt silicide layer on a cobalt polysilicide layer.

4. The structure of claim 1 , wherein the first waveguide core includes one of crystalline silicon (c-Si), amorphous silicon (a-Si), polysilicon (polySi), polysilicon germanium (polySiGe), silicon nitride (SiN), silicon oxynitride (SiON), gallium nitride (GaN), and aluminum nitride (AlN); and

wherein the metal silicide layer includes one of nickel, titanium and cobalt.

5. The structure of claim 1 , wherein the metal silicide layer co-extends along a length of the first waveguide core.

6. The structure of claim 1 , wherein the hybrid plasmonic waveguide includes a plurality of hybrid plasmonic waveguide portions, each of the plurality of hybrid plasmonic waveguide portions laterally spaced from an adjacent hybrid plasmonic waveguide portion by a dielectric spacer.

7. The structure of claim 1 , wherein the hybrid plasmonic waveguide includes a first hybrid plasmonic waveguide portion over a second hybrid plasmonic waveguide portion, wherein first waveguide cores of the first and second hybrid plasmonic waveguide portions include different materials.

8. The structure of claim 7 , wherein the first hybrid plasmonic waveguide portion includes a plurality of first hybrid plasmonic waveguide portions laterally adjacent one another, and the second hybrid plasmonic waveguide portion includes a plurality of second hybrid plasmonic waveguide portions laterally adjacent one another.

9. The structure of claim 1 , wherein the second waveguide core of the dielectric waveguide is directly operatively coupled to the first waveguide core of the hybrid plasmonic waveguide.

10. The structure of claim 1 , further comprising a complementary metal-oxide semiconductor (CMOS) device integrated adjacent the hybrid plasmonic waveguide.

11. The structure of claim 1 , further comprising an optical component operatively coupled to the hybrid plasmonic waveguide and configured to communicate an optical signal into or from the hybrid plasmonic waveguide.

12. A photonic integrated circuit (PIC) structure, comprising:

a hybrid plasmonic waveguide including a first waveguide core and a metal silicide layer contacting the first waveguide core;

a complementary metal-oxide semiconductor (CMOS) device integrated adjacent the hybrid plasmonic waveguide; and

an optical component operatively coupled to the hybrid plasmonic waveguide and configured to communicate an optical signal into or from the hybrid plasmonic waveguide,

wherein the first waveguide core includes silicon nitride and the metal silicide layer includes one of: a nickel silicide layer on a nickel polysilicide layer, titanium silicide layer on titanium polysilicide layer, and a cobalt silicide layer on a cobalt polysilicide layer.

13. The structure of claim 12 , wherein the hybrid plasmonic waveguide includes a first hybrid plasmonic waveguide portion over a second hybrid plasmonic waveguide portion, wherein the first waveguide cores of the first and second hybrid plasmonic waveguide portions include different materials.

14. The structure of claim 13 , wherein the first hybrid plasmonic waveguide portion includes a plurality of first hybrid plasmonic waveguide portions laterally adjacent one another, and the second hybrid plasmonic waveguide portion includes a plurality of second hybrid plasmonic waveguide portions laterally adjacent one another.

15. The structure of claim 12 , further comprising a dielectric waveguide including a second waveguide core including a dielectric, the dielectric waveguide part of the hybrid plasmonic waveguide, wherein the dielectric waveguide is devoid of the metal silicide layer contacting the second waveguide core thereof.

16. A structure comprising:

a hybrid plasmonic waveguide including:

a first waveguide core;

a metal silicide layer contacting the first waveguide core; and

a first hybrid plasmonic waveguide portion over a second hybrid plasmonic waveguide portion, wherein first waveguide cores of the first and second hybrid plasmonic waveguide portions include different materials.

17. The structure of claim 16 , wherein the metal silicide layer is over the first waveguide core.

18. The structure of claim 16 , wherein the metal silicide layer is under the first waveguide core.

19. The structure of claim 16 , wherein the first hybrid plasmonic waveguide portion includes a plurality of first hybrid plasmonic waveguide portions laterally adjacent one another, and the second hybrid plasmonic waveguide portion includes a plurality of second hybrid plasmonic waveguide portions laterally adjacent one another.

20. The structure of claim 16 , further comprising a complementary metal-oxide semiconductor (CMOS) device integrated adjacent the hybrid plasmonic waveguide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2022
From: BIAN, YUSHENG; SPORER, RYAN WILLIAM
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 061269/0742 →
Continuity (1)
Related Publication 20240111088A1 · Apr 4, 2024
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