SEMICONDUCTOR DEVICE
A semiconductor device includes a dielectric layer, a first trench located in the dielectric layer, a first semiconductor located in the first trench, a second semiconductor layer and an electrical connector. The dielectric layer has a first surface. The second semiconductor layer includes an active portion connecting the first semiconductor layer, and the electrical connector is located on the first surface and connects the second semiconductor layer.
1 . A semiconductor device, comprising:
a dielectric layer having a first surface;
a first trench located in the dielectric layer;
a first semiconductor layer located in the first trench;
a second semiconductor layer comprising an active portion connecting to the first semiconductor layer; and
an electrical connector located on the first surface and connected to the second semiconductor layer.
2 . The semiconductor device according to claim 1 , wherein the electrical connector covers the first trench.
3 . The semiconductor device according to claim 1 , further comprising a first junction formed between the first semiconductor layer and the active portion, wherein the first junction is located in the first trench.
4 . The semiconductor device according to claim 1 , wherein the active portion comprises a first section in the first trench and a second section protruding from the first trench.
5 . The semiconductor device according to claim 1 , wherein the active portion contacts the first surface of the dielectric layer.
6 . The semiconductor device according to claim 1 , wherein the second semiconductor layer further comprises a doped portion located on the first surface and connecting to the active portion.
7 . The semiconductor device according to claim 6 , wherein the doped portion covers the first trench.
8 . The semiconductor device according to claim 4 , wherein the second semiconductor layer further comprises a doped portion covering the second section.
9 . The semiconductor device according to claim 1 , wherein the first trench, the first semiconductor layer and the active portion respectively have a depth, a first thickness and a second thickness, and a sum of the first thickness and the second thickness is greater than the depth.
10 . The semiconductor device according to claim 9 , wherein the first thickness is substantially equal to the depth.
11 . The semiconductor device according to claim 9 , wherein the second semiconductor layer further comprises a doped portion located on the first surface and having a third thickness, and a sum of the first thickness and the second thickness is substantially equal to a sum of the depth and the third thickness.
12 . The semiconductor device according to claim 11 , wherein the electrical connector has a fourth thickness, and the fourth thickness is greater than the third thickness.
13 . The semiconductor device according to claim 1 , further comprising a second trench in the dielectric layer, wherein the first trench and the second trench respectively have a first width and a second width, and the first width is different from the second width.
14 . The semiconductor device according to claim 13 , wherein the first width is greater than the second width, the first semiconductor layer is located in the second trench and a thickness of the first semiconductor layer in the first trench is greater than that of the first semiconductor layer in the second trench.
15 . The semiconductor device according to claim 13 , wherein the first semiconductor layers located in the first trench and the second trench have different chemical composition.
16 . The semiconductor device according to claim 13 , wherein the second semiconductor layers located in the first trench and the second trench have different chemical composition.
17 . The semiconductor device according to claim 1 , further comprising a substrate having a first sublayer, wherein the dielectric layer is formed on the first sublayer.
18 . The semiconductor device according to claim 17 , wherein the first sublayer of the substrate comprises a cavity connecting to the first trench, and the first semiconductor layer is located in the first trench and the cavity.
19 . The semiconductor device according to claim 17 , wherein the substrate further comprises a base layer and a second sublayer located between the first sublayer and the base layer.
20 . A semiconductor apparatus, comprising:
a substrate comprising a first sublayer;
a semiconductor device of claim 1 ; and
a transistor comprising a fin, wherein the fin and the first sublayer have the same material.