STRUCTURE AND METHOD FOR FORMING OHMIC CONTACTS TO N FACE BULK GAN SUBSTRATE
A semiconductor device is formed on a bulk substrate of n-type GaN. The semiconductor device has a material layer grown on the bulk substrate. A first surface of the bulk substrate facing away from the material layer is mechanically roughened and a negative electrical contact is formed on the roughened surface using a low work function metal.
1 . A method, comprising:
forming a semiconductor device on a bulk substrate of n-type GaN, the semiconductor device comprising an epitaxial layer;
mechanically roughening a first surface of the bulk substrate facing away from the semiconductor device such that the first surface is not predominantly composed of (000 1 ) oriented crystal planes; and
forming a negative electrical contact on the roughened surface using a low work function metal.
2 . The method of claim 1 , wherein the mechanically roughening of the first surface comprises wafer grinding or lapping the surface.
3 . The method of claim 2 , wherein the wafer grinding or lapping uses a particle size of 6 μm or more.
4 . The method of claim 1 , wherein the mechanically roughening of the first surface comprises wire sawing or dicing the bulk substrate.
5 . The method of claim 1 , wherein after forming the negative electrical contact, the negative electrical contact is not exposed to any anneal of >300° C. or an anneal of more than one minute at >200° C.
6 . The method of claim 1 , further comprising chemically treating the first surface using a wet etch chemical before forming the negative electrical contact.
7 . The method of claim 6 , wherein the wet etch chemical comprises any combination of HCl and HF containing a buffered oxide etch.
8 . The method of claim 1 , wherein the low work function metal comprises at least one of Ti, Al, or TiN.
9 . The method of claim 1 , wherein the mechanical roughening of the first surface of the bulk substrate results in broken molecular bonds at the first surface resulting in an increase in electronic states.
10 . The method of claim 1 , wherein the epitaxial layer comprises a p-type epitaxial layer, the method further comprising forming a positive electrical contact on the p-type epitaxial layer.
11 . A method, comprising:
forming a semiconductor device on a bulk substrate of n-type GaN, the semiconductor device comprising an epitaxial layer grown on the bulk substrate;
mechanically roughening a first surface of the bulk substrate facing away from the semiconductor device to break molecular bonds at the surface resulting in an increase in electronic states; and
forming a negative electrical contact on the roughened surface using a low work function metal.
12 . The method of claim 11 , wherein the mechanically roughening of the first surface comprises wafer grinding or lapping the first surface.
13 . The method of claim 12 , wherein the wafer grinding or lapping uses a particle size of 6 μm or more.
14 . The method of claim 11 , wherein the mechanically roughening of the first surface comprises wire sawing or dicing the bulk substrate.
15 . The method of claim 11 , wherein after forming the negative electrical contact, the negative electrical contact is not exposed to any anneal of >300° C. or an anneal of more than one minute at >200° C.
16 . The method of claim 11 , further comprising chemically treating the roughened surface using a wet etch chemical before forming the bottom electrical contact.
17 . The method of claim 16 , wherein the wet etch chemical comprises any combination of HCl and HF containing a buffered oxide etch.
18 . The method of claim 11 , wherein the low work function metal comprises at least one of Ti, Al, or TiN.
19 . The method of claim 11 , wherein the mechanical roughening of the surface of the bulk substrate results in the surface not being predominantly composed of (000 1 ) oriented crystal structures.
20 . The method of claim 11 , wherein epitaxial layer comprises a p-type epitaxial layer, the method further comprising forming a positive electrical contact on the p-type epitaxial layer.