IP Library Granted Patent US 11,656,507
Granted Patent B2
US 11,656,507 · App. 17/944,660 · Granted May 23, 2023

Display device

Inventors: Tsung-Han Tsai (Miao-Li County, TW); Hsia-Ching Chu (Miao-Li County, TW); Mei-Chun Shih (Miao-Li County, TW)
Assignee: INNOLUX CORPORATION
G02F1/134309G02F1/1368G02F1/13439G02F1/133345G02F1/136286G02F1/133707G02F1/134363G02F1/136227G02F2202/10
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Quick Facts
Patent No.
US 11,656,507
App. No.
17/944,660
Granted
May 23, 2023
Kind
B2
Abstract

A thin film transistor substrate comprises: a substrate; a scan line disposed on the substrate and extending along a first direction; a semiconductor layer disposed on the scan line; and a drain electrode disposed on the semiconductor layer and comprising an arc edge outside the scan line, wherein a part of the semiconductor layer extends along a second direction perpendicular to the first direction and the arc edge overlaps the part of the semiconductor layer.

Claims (15)

1. A thin film transistor substrate, comprising:

a substrate;

a scan line disposed on the substrate and extending along a first direction;

a semiconductor layer disposed on the scan line; and

a drain electrode disposed on the semiconductor layer and comprising an arc edge outside the scan line,

wherein a part of the semiconductor layer extends along a second direction perpendicular to the first direction and the arc edge overlaps the part of the semiconductor layer.

2. The thin film transistor substrate of claim 1 , wherein the drain electrode and the scan line are overlapped.

3. The thin film transistor substrate of claim 1 , further comprising a transparent conductive layer disposed on the substrate, wherein the arc edge is not overlapped with the transparent conductive layer, and the transparent conductive layer is at least partially overlapped with the semiconductor layer.

4. The thin film transistor substrate of claim 3 , wherein the transparent conductive layer comprises plural slits.

5. The thin film transistor substrate of claim 1 , wherein a projection of the drain electrode on the substrate is located in a projection of the semiconductor layer on the substrate.

6. The thin film transistor substrate of claim 1 , further comprising a source electrode disposed on the substrate, wherein a projection of the source electrode on the substrate is located in a projection of the semiconductor layer on the substrate.

7. The thin film transistor substrate of claim 1 , further comprising:

a counter substrate opposite to the substrate;

a transparent conductive layer disposed on the substrate; and

a display medium layer disposed between the transparent conductive layer and the counter substrate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2024
From: INNOLUX CORPORATION
To: RED OAK INNOVATIONS LIMITED
Reel/Frame 069206/0903 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2022
From: TSAI, TSUNG-HAN; CHU, HSIA-CHING; SHIH, MEI-CHUN
To: INNOLUX CORPORATION
Reel/Frame 061094/0525 →
Priority Claims (1)
TW 105114848 · May 13, 2016 · national
Continuity (4)
Continuation 16999350 · Aug 21, 2020
Continuation 16223355 · Dec 18, 2018
Division 15587428 · May 5, 2017
Related Publication 20230008177A1 · Jan 12, 2023
Cited By (1)
US 12,443,077