LASER PROCESSING OF LITHIUM BATTERY WEB
Methods and apparatuses for processing lithium batteries with a laser source having a wide process window, high efficiency, and low cost are provided. The laser source is adapted to achieve high average power and a high frequency of picosecond pulses. The laser source can produce a line-shaped beam either in a fixed position or in scanning mode. The system can be operated in a dry room or vacuum environment. The system can include a debris removal mechanism, for example, inert gas flow, to the processing site to remove debris produced during the patterning process.
1 . A method of producing an energy storage device, comprising:
transferring a flexible conductive substrate having a lithium metal film formed thereover; and
patterning the lithium metal film with a picosecond-pulsed laser scribing process to remove portions of the lithium metal film exposing the underlying flexible conductive substrate without etching the flexible conductive substrate while transferring the flexible conductive substrate.
2 . The method of claim 1 , wherein patterning the lithium metal film with a picosecond-pulsed laser scribing process to remove portions of the lithium metal film exposing the underlying flexible conductive substrate comprises forming trenches parallel to and perpendicular to a width of the flexible conductive substrate to form patterned cells.
3 . The method of claim 1 , wherein patterning the lithium metal film with a picosecond-pulsed laser scribing process to remove portions of the lithium metal film exposing the underlying flexible conductive substrate comprises removing lithium from a transition region adjacent to an edge of the flexible conductive substrate.
4 . The method of claim 1 , wherein patterning the lithium metal film with a picosecond-pulsed laser scribing process comprises using a pulsed infrared laser having a wavelength of about 1 micrometer with a laser pulse width of about 15 nanoseconds or less and a pulse rep rate frequency of about 100 kHz or greater.
5 . The method of claim 4 , wherein the laser pulse width is from about 1 picosecond to about 15 picoseconds and the pulse rep rate frequency is 50 MHz or greater.
6 . The method of claim 1 , wherein transferring the flexible conductive substrate comprises moving the flexible conductive substrate at a speed from about 0.1 meters/minute to about 50 meters/minute.
7 . The method of claim 1 , wherein patterning the lithium metal film with the picosecond-pulsed laser scribing process comprises a single-pass laser ablation process.
8 . The method of claim 1 , wherein the picosecond-pulsed laser produces a line-shaped laser beam.
9 . The method of claim 8 , wherein the line-shaped laser beam is produced by single axis galvo scanning or polygon scanning.
10 . The method of claim 1 , wherein the picosecond-pulsed laser produces a circular Gaussian laser spot produced by 2-axis galvo scanning or polygon scanning.
11 . A laser patterning system for patterning an energy storage device, comprising:
a laser patterning chamber defining a processing volume and for processing a flexible conductive substrate having a film stack formed thereon;
a plurality of transfer rollers positioned in the processing volume and for transferring the flexible conductive substrate; and
a laser source arrangement comprising one or more picosecond-pulsed lasers positioned to expose the film stack to a laser as the flexible conductive substrate is in contact with at least one of the transfer rollers.
12 . The laser patterning system of claim 11 , wherein the laser source arrangement comprises a first laser source positioned above the plurality of transfer rollers to process a first side of the flexible conductive substrate and a second laser source positioned below the plurality of transfer rollers to process a second side of the flexible conductive substrate.
13 . The laser patterning system of claim 12 , wherein at least one of the first laser source and the second laser source is positioned to emit a laser beam that is perpendicular to a travel direction of the flexible conductive substrate.
14 . The laser patterning system of claim 12 , wherein at least one of the first laser source and the second laser source is positioned to emit a laser beam that is parallel to a travel direction of the flexible conductive substrate.
15 . The laser patterning system of claim 11 , wherein the plurality of transfer rollers comprises a first transfer roller positioned above a second transfer roller and the laser source arrangement comprises a first laser source positioned to process a first side of the flexible conductive substrate and a second laser source positioned process a second side of the flexible conductive substrate.
16 . The laser patterning system of claim 11 , wherein the one or more picosecond-pulsed lasers are positioned to remove lithium from a transition region adjacent to an edge of the flexible conductive substrate.
17 . The laser patterning system of claim 11 , wherein the one or more picosecond-pulsed lasers are positioned to form trenches parallel to and perpendicular to a width of the flexible conductive substrate to form patterned cells.
18 . The laser patterning system of claim 11 , wherein the one or more picosecond-pulsed lasers produce a pulsed infrared laser having a wavelength of about 1 micrometer with a laser pulse width of about 15 nanoseconds or less and a pulse rep rate frequency of about 100 kHz or greater.
19 . The laser patterning system of claim 11 , wherein the picosecond-pulsed laser produces a line-shaped laser beam, and wherein the line-shaped laser beam is produced by single axis galvo scanning or polygon scanning.
20 . A laser patterning system for patterning an energy storage device, comprising:
a laser patterning chamber defining a processing volume and for processing a flexible conductive substrate having a film stack formed thereon;
a plurality of transfer rollers positioned in the processing volume and for transferring the flexible conductive substrate; and
a laser source arrangement comprising:
one or more picosecond-pulsed lasers positioned to expose the film stack to a laser as the flexible conductive substrate is in contact with at least one of the transfer rollers; and
a first laser source positioned above the plurality of transfer rollers to process a first side of the flexible conductive substrate and a second laser source positioned below the plurality of transfer rollers to process a second side of the flexible conductive substrate, wherein at least one of the first laser source and the second laser source is positioned to emit a laser beam that is perpendicular or parallel to a travel direction of the flexible conductive substrate, and wherein the one or more picosecond-pulsed lasers produce a pulsed infrared laser having a wavelength of about 1 micrometer with a laser pulse width of about 15 nanoseconds or less and a pulse rep rate frequency of about 100 kHz or greater.