Hybrid CMOS micro-LED display layout
Described is a CMOS power plane including interleaving contact areas, alternating V led and V cat contact areas, on at least two long sides of the μLED display area. By this way, V led and cathode current are injected uniformly along the four sides of the μLED display panel. A large cathode current distribution ring on V led and V cat circuits is used to distribute the current along the four sides of the panel. The current distribution ring surrounds a pixel die area. An insulated area may be included on the cathode current redistribution ring adjacent one of the of μbumps.
1. A CMOS power plane comprising:
a cathode redistribution ring having an inner portion and an outer portion, the inner portion surrounding a perimeter of a die pixel area, the outer portion comprising an common supply voltage V led interleaved with a cathode current distribution area along a first side, a second side, a third side, and a fourth side of the CMOS power plane; and
a plurality of cathode μbumps contacting the inner portion of the cathode redistribution ring along the perimeter of the die pixel area.
2. The CMOS power plane of claim 1 , wherein there are at least three common supply voltage Vied interleaved with at least three cathode current distribution areas.
3. The CMOS power plane of claim 1 , further comprising an insulated area on the cathode redistribution ring adjacent one of the plurality of cathode μbumps, wherein the insulated area comprises etched lines.
4. The CMOS power plane of claim 1 , further comprising an insulated area on the cathode redistribution ring adjacent one of the plurality of cathode ubumps, wherein the insulated area comprises a dielectric material.
5. The CMOS power plane of claim 1 , further comprising a plurality of PMOS transistors connected to the die pixel area.
6. The CMOS power plane of claim 1 , wherein the plurality of cathode ubumps are electrically connected to a common cathode grid.
7. The CMOS power plane of claim 1 , wherein the die pixel area comprises a plurality of pixels.
8. The CMOS power plane of claim 1 , further comprising an insulated area on the cathode redistribution ring adjacent one of the plurality of cathode μbumps, wherein the insulated area has a size of greater than 80 μm.
9. The CMOS power plane of claim 1 , further comprising an insulated area on the cathode redistribution ring adjacent one of the plurality of cathode μbumps, wherein the insulated area is at least 10 μm away from one of the plurality of cathode μbumps.
10. The CMOS power plane of claim 1 , wherein there are eight common supply voltage V led interleaved with ten cathode current distribution areas.
11. A CMOS layout comprising:
a power plane on a substrate, the power plane having a plurality of alternating V led contact areas and cathode contact areas dispersed along a first side, a second side, a third side, and a fourth side of the power plane;
a cathode current redistribution ring extending along the first side, the second side, the third side, and the fourth side of the power plane;
a plurality of cathode μbumps connecting each of the plurality of alternating Vled contact areas and cathode contact areas to a corresponding p contact of a plurality of pixels; and
a common cathode grid electrically connecting the plurality of pixels and the plurality of cathode μbumps.
12. The CMOS layout of claim 11 , wherein there are at least three V led contact areas alternating with at least three cathode contact areas.
13. The CMOS layout of claim 11 , further comprising an insulated area on the cathode current redistribution ring adjacent one of the plurality of cathode μbumps, wherein the insulated area comprises etched lines.
14. The CMOS layout of claim 11 , further comprising a plurality of PMOS transistors connected in parallel to at least one of a plurality of pixels.
15. The CMOS layout of claim 11 , further comprising an insulated area on the cathode current redistribution ring adjacent one of the plurality of cathode μbumps, wherein the insulated area has a size of greater than 80 μm.
16. The CMOS layout of claim 11 , further comprising an insulated area on the cathode current redistribution ring adjacent one of the plurality of cathode ubumps, wherein the insulated area is at least 10 μm away from one of the plurality of cathode ubumps.
17. The CMOS layout of claim 11 , further comprising an insulated area on the cathode current redistribution ring adjacent one of the plurality of cathode μbumps, wherein the insulated area comprises a dielectric material.
18. The CMOS layout of claim 11 , wherein the alternating V led contact areas and cathode contact areas are uniformly dispersed along the first side, the second side, the third side, and the fourth side of the power plane.