METHOD OF MANUFACTURING OPTOELECTRONIC PRODUCTS AND APPARATUS THEREOF
The application provides a method of manufacturing optoelectronic products. A first carrier substrate is provided with electronic devices arranged as a first matrix with a first row pitch and a first column pitch. A first transferring step is performed to transfer a first portion of the electronic devices from the first carrier substrate to a second carrier substrate to form a second matrix with a second row pitch equal to the first row pitch and a second column pitch larger than the first column pitch. A second transferring step is performed to transfer a second portion of the electronic devices from the second carrier substrate to a third carrier substrate to form a third matrix with a third row pitch larger than the second row pitch and a third column pitch equal to the second column pitch.
1 . A method for manufacturing an optoelectronic product, comprising:
providing a first carrier substrate;
providing a plurality of electronic devices disposed on the first carrier substrate and arranged as a first matrix, and the first matrix comprising:
a plurality of first columns extending along a first direction and a plurality of first rows extending along a second direction, wherein two adjacent of the first columns are separated from each other by a first column pitch, and two adjacent of the first rows are separated from each other by a first row pitch;
transferring a first portion of the electronic devices from the first carrier substrate to a second carrier substrate and arranging the electronic devices as a second matrix, and the second matrix comprising:
a plurality of second columns extending along the first direction and a plurality of second rows extending along the second direction, wherein two adjacent of the second columns are separated from each other by a second column pitch that is equal to the first column pitch, and two adjacent of the second rows are separated from each other by a second row pitch that is greater than the first row pitch; and
transferring a second portion of the electronic devices from the second carrier substrate to a third carrier substrate and arranging the electronic devices as a third matrix, and the third matrix comprising:
a plurality of third columns extending along the first direction and a plurality of third rows along the second direction, wherein two adjacent of the third columns are separated from each other by a third column pitch that is greater than the second column pitch, and two adjacent of third rows are separated from each other by a third row pitch that is equal to the second row pitch.
2 . The method of claim 1 , wherein the step of transferring the first portion of the electronic devices from the first carrier substrate to the second carrier substrate is to transfer the electronic devices to the second carrier substrate in a one first row-by-one first row manner to form the second rows.
3 . The method of claim 2 , wherein there is a first row sequence among the first rows, and there is a second row sequence among the second rows equal to the first row sequence.
4 . The method of claim 2 , wherein the step of transferring the second portion of the electronic devices from the second carrier substrate to the third carrier substrate is to transfer the electronic devices to the third carrier substrate in a one second column-by-one second column manner to form the third columns, wherein the second portion can be equal to or not equal to the first portion.
5 . The method of claim 4 , wherein there is a second column sequence among the second columns, and there is a third column sequence among the third columns equal to the second column sequence.
6 . The method of claim 2 , further comprising:
transferring a third portion of the electronic devices from the third carrier substrate to a pixel carrier substrate and arranging the electronic devices as a pixel matrix, and the pixel matrix comprising:
a plurality of pixel columns along the first direction and a plurality of pixel rows along the second direction, wherein two adjacent of the pixel columns are separated by a pixel column pitch that is a first positive integer multiple of the third column pitch, and two adjacent of the pixel rows are separated by a pixel row pitch that is a second positive integer multiple of the third row pitch.
7 . The method of claim 1 , wherein the electronic devices are light-emitting diode (LED) elements, laser diodes, photodiodes, or integrated circuit components.
8 . The method of claim 7 , wherein each of the LED elements comprises an LED chip and a light conversion layer covering the LED chip.
9 . The method of claim 8 , wherein the LED chip comprises a plurality of light-emitting regions connected in series, in parallel, or in parallel and series.
10 . The method of claim 8 , wherein each of the LED elements further comprises two electrodes located on a same side of the LED chip.
11 . The method of claim 1 , wherein the first carrier substrate is a growth substrate selected from Ge, GaAs, InP, Si, sapphire, SiC, LiAlO 2 , GaN, or AlN.
12 . An apparatus for performing the step of transferring in the method of claim 1 , comprising:
a laser module configured to generate a laser beam with a predetermined emission pattern;
a donor stage configured to support the first carrier substrate and the plurality of electronic devices on the first carrier substrate, wherein the laser module and the donor stage are configured to allow relative movement, thereby enabling the laser beam to irradiate the first portion of the electronic devices among the electronic devices; and
a receiving stage configured to support the second carrier substrate, wherein the donor stage and the receiving stage are configured to allow relative movement, thereby enabling the first portion of the electronic devices to be transferred to predetermined positions on the second carrier substrate.
13 . The apparatus of claim 12 , further comprising a light-shielding plate blocking the laser beam to form the predetermined emission pattern.
14 . The apparatus of claim 12 , wherein the laser module further comprises a laser generator and a beam shaping optical system.
15 . The apparatus of claim 12 , wherein the laser beam comprises a linear predetermined emission pattern.
16 . A method for manufacturing LED devices, comprising:
providing a growth substrate with LED chips formed thereon;
transferring the LED chips from the growth substrate to a temporary substrate;
forming a light conversion layer on the temporary substrate, wherein the light conversion layer covers the LED chips and is configured to convert a first light emitted from the LED chips into a second light with a predetermined wavelength;
patterning the light conversion layer;
forming a light filter layer on the light conversion layer, wherein the light filter layer covers the light conversion layer and the LED chips and is configured to block the first light; and
patterning the light filter layer such that each LED device comprises a portion of the light conversion layer, the light filter layer, and one of the LED chips.
17 . The method of claim 16 , further comprising pre-treatment of the growth substrate to form recesses on the LED chips.
18 . The method of claim 17 , wherein a dimension of the recesses is greater than an emission wavelength of the LED chips.
19 . The method of claim 16 , wherein the light conversion layer has a utilization rate σ′ higher than 70%.
20 . The method of claim 19 , wherein the light conversion layer is a patternable quantum dot resist layer.