Device including patterning a conductive coating

1. An opto-electronic device having a plurality of layers, comprising:

a nucleation-inhibiting coating (NIC) disposed in a first portion of a lateral aspect of the device;

a feature comprising a laterally extending portion, the feature being disposed to provide a shadowed region in a second portion of the lateral aspect of the device, the shadowed region overlapping the laterally extending portion, and the shadowed region being substantially devoid of the NIC; and

a conductive coating comprising a conductive coating material,

wherein at least a part of the conductive coating is disposed in the shadowed region.

2. The opto-electronic device of claim 1 , wherein the shadowed region is adapted to be masked during the deposition of the NIC to inhibit the deposition of the NIC thereon.

3. The opto-electronic device of claim 1 , further comprising, in the first portion, an emissive region, comprising:

a first electrode,

a second electrode, and

at least one semiconducting layer disposed between the first electrode and the second electrode,

wherein the second electrode is disposed between the at least one semiconducting layer and the NIC, and the conductive coating is electrically coupled with the second electrode.

4. The opto-electronic device of claim 3 , wherein at least a part of the NIC is disposed between the second electrode and the conductive coating.

5. The opto-electronic device of claim 3 , further comprising a pixel definition layer (PDL) covering an edge of the first electrode, wherein the PDL defines an opening through which the first electrode is exposed, and which corresponds to the emissive region of the device.

6. The opto-electronic device of claim 5 , further comprising a third electrode is spaced apart from the second electrode.

7. The opto-electronic device of claim 6 , wherein the third electrode is electrically coupled with the second electrode via the conductive coating.

8. The opto-electronic device of claim 7 , wherein the feature is a patterning structure.

9. The opto-electronic device of claim 8 , wherein the patterning structure comprises a base portion and a top portion, and the top portion extends laterally outward from the base portion, thereby shadowing the shadowed region.

10. The opto-electronic device of claim 9 , wherein a sidewall extends between the base portion and the top portion, and the sidewall is at least one of: substantially linear, tapered, and curved.

11. The opto-electronic device of claim 8 , wherein at least a part of the third electrode is disposed in the shadowed region.

12. The opto-electronic device of claim 8 , wherein the third electrode is disposed beneath the patterning structure.

13. The opto-electronic device of claim 8 , wherein the third electrode is integrally formed with the conductive coating.

14. The opto-electronic device of claim 8 , wherein the patterning structure is disposed on a surface of the PDL.

15. The opto-electronic device of claim 14 , wherein the third electrode is disposed on the surface of the PDL.

16. The opto-electronic device of claim 7 , wherein the feature is the third electrode.

17. The opto-electronic device of claim 16 , wherein the third electrode has at least one sidewall, and the conductive coating is arranged adjacent to the sidewall.

18. The opto-electronic device of claim 3 , further comprising a non-emissive region, comprising the shadowed region and the conductive coating.

19. The opto-electronic device of claim 6 , wherein the third electrode is an auxiliary electrode.

20. The opto-electronic device of claim 1 , wherein the conductive coating material comprises magnesium.