IP Library Granted Patent US 11,936,371
Granted Patent B1
US 11,936,371 · App. 17/959,904 · Granted Mar 19, 2024

Accurate reduced gate-drive current limiter

Inventors: Satish Kumar Vangara (Woodley, GB); Antony Christopher Routledge (Basingstoke, GB); Gregory Szczeszynski (Nashua, NH); Xiaowu Sun (Milford, NH)
Assignee: pSemi Corporation
H03K17/0822H03K5/086
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Quick Facts
Patent No.
US 11,936,371
App. No.
17/959,904
Granted
Mar 19, 2024
Kind
B1
Abstract

Circuits and methods that limit current through power FETs of power converter to reduce damaging current in-rush events, independent of switching frequency, device mismatches, and PVT variations. Embodiments utilize a closed-loop feedback circuit and/or a calibrated compensation circuit to regulate, substantially independent of frequency, the control voltage V GATE applied to a power FET gate. In a reduced gate-drive mode, connecting a feedback or compensation circuit to the gate of an LDO source-follower FET allows the gate voltage to be regulated to control the LDO output voltage to a final inverter coupled to the gate of a power FET so that V GATE is adjusted to provide a reduced gate-drive to the power FET; connecting to the output of the LDO allows the LDO output voltage to the final inverter to be directly regulated to adjust V GATE ; connecting to the gate of the power FET allows V GATE to be directly set.

Claims (42)

1. A gate control circuit for regulating a gate-drive voltage to a gate of a power FET, including:

(a) a source-follower circuit including a source-follower FET having a conduction channel configured to be coupled to the gate of the power FET, the gate control circuit configured to selectively apply at least a first gate-drive voltage or a second gate-drive voltage to the gate of the power FET such that a current flow through the power FET in an ON state is limited when the second gate-drive voltage is applied; and

(b) a feedback circuit coupled to a gate of the source-follower FET and configured to generate a feedback signal as a function of the current flow through the power FET and to regulate the second gate-drive voltage as a function of the generated feedback signal.

2. The invention of claim 1 , wherein the second gate-drive voltage is substantially independent of frequency.

3. The invention of claim 1 , wherein the power FET is a component of a power converter, and the gate control circuit applies the second gate-drive voltage to the gate of the power FET during a dynamic re-configuration of a conversion ratio of the power converter.

4. The invention of claim 1 , wherein the power FET is a component of a power converter, and the gate control circuit applies the second gate-drive voltage to the gate of the power FET during a startup period of the power converter.

5. The invention of claim 1 , wherein the power FET is a component of a power converter, and the gate control circuit applies the second gate-drive voltage to the gate of the power FET during a charge re-balancing event among two or more capacitors within the power converter.

6. The invention of claim 1 , wherein the feedback circuit includes:

(a) a current to voltage converter configured to output a voltage proportional to the current flow through the power FET;

(b) a filter having an input coupled to the output of the current to voltage converter, and an output;

(c) an amplifier coupled to the output of the filter and to a reference voltage, the amplifier configured to output the feedback current.

7. The invention of claim 1 , the source-follower circuit further includes:

(a) a current source coupled between a voltage source and a gate of the source-follower FET;

(b) a voltage regulator coupled to the gate of the source-follower FET and configured to provide a voltage; and

(c) a voltage control circuit coupled to the gate of the source-follower FET and including a first selectable configuration disconnected from the gate of the source-follower FET, and a second selectable configuration coupled to the gate of the source-follower FET, wherein the voltage at the gate of the source-follower FET when the voltage control circuit is in the first selectable configuration is higher than in the second selectable configuration.

8. The invention of claim 7 , wherein the voltage control circuit includes:

(a) a switch;

(b) a first diode-connected FET; and

(c) at least one additional diode-connected FET;

wherein the switch, the first diode-connected FET, and the at least one additional diode-connected FET are coupled in series between the gate of the source-follower FET and a reference potential.

9. The invention of claim 7 , wherein the voltage regulator is a Zener diode.

10. A gate control circuit for controlling the ON resistance, R ON , of a power FET in a power converter, including:

(a) a source-follower circuit including a source-follower FET having a conduction channel configured to be coupled to the gate of the power FET, the gate control circuit configured to lower the R ON of the power FET in a first ON state during normal power converter operation and to raise the R ON of the power FET in a second ON state to restrict flow of current through the power FET; and

(b) a feedback circuit coupled to a gate of the source-follower FET and configured to generate a feedback current proportional to a current flow through the power FET and to regulate the R ON of the power FET in the second ON state in proportion to the generated feedback current to provide a reduced gate-drive to the power FET.

11. The invention of claim 10 , wherein the reduced gate-drive to the power FET is substantially independent of frequency.

12. The invention of claim 10 , wherein the gate control circuit raises the R ON of the power FET in the second ON state during a re-configuration of a conversion ratio of the power converter.

13. The invention of claim 10 , wherein the gate control circuit raises the R ON of the power FET in the second ON state during a startup period of the power converter.

14. The invention of claim 10 , wherein the gate control circuit raises the R ON of the power FET in the second ON state during a charge re-balancing event among two or more capacitors within the power converter.

15. The invention of claim 10 , wherein the feedback circuit includes:

(a) a current to voltage converter configured to output a voltage proportional to the current flow through the power FET;

(b) a filter having an input coupled to the output of the current to voltage converter, and an output;

(c) an amplifier coupled to the output of the filter and to a reference voltage, the amplifier configured to output the feedback current.

16. The invention of claim 10 , wherein and the source-follower circuit further includes:

(a) a current source coupled between a voltage source and a gate of the source-follower FET;

(b) a voltage regulator coupled to the gate of the source-follower FET and configured to provide a voltage; and

(c) a voltage control circuit coupled to the gate of the source-follower FET and including a first selectable configuration disconnected from the gate of the source-follower FET, and a second selectable configuration coupled to the gate of the source-follower FET, wherein the voltage at the gate of the source-follower FET when the voltage control circuit is in the first selectable configuration is higher than in the second selectable configuration.

17. The invention of claim 16 , wherein the voltage control circuit includes:

(a) a switch;

(b) a first diode-connected FET; and

(c) at least one additional diode-connected FET;

wherein the switch, the first diode-connected FET, and the at least one additional diode-connected FET are coupled in series between the gate of the source-follower FET and a reference potential.

18. The invention of claim 16 , wherein the voltage regulator is a Zener diode.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 14, 2024
From: PSEMI CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 066597/0427 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 19, 2022
From: VANGARA, SATISH KUMAR; ROUTLEDGE, ANTONY CHRISTOPHER; SZCZESZYNSKI, GREGORY; SUN, XIAOWU
To: PSEMI CORPORATION
Reel/Frame 062146/0228 →
Cited By (3)
US 12,265,411 US 12,341,501 US 12,717,367