Nitride semiconductor component and process for its production
A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 μm 2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
1. A nitride semiconductor product comprising:
a substrate with a silicon surface;
an AlN nucleation layer arranged on the silicon surface of the substrate;
a masking layer, formed of silicon nitride, arranged on the AlN nucleation layer;
an AlGaN buffer layer directly adjacent to the AlN nucleation layer, wherein the masking layer is disposed on the AlGaN buffer layer;
a gallium-containing first nitride semiconductor layer arranged on the masking layer; and
a gallium-containing second nitride semiconductor layer, wherein an AlN or AlGaN containing nitride intermediate layer with a thickness of 8 nm to 15 nm is arranged between the gallium-containing first nitride semiconductor layer and the gallium-containing second nitride semiconductor layer;
a multi-quantum well structure; and
a p-doped, gallium-containing nitride semiconductor cover layer on the multi-quantum well structure.
2. The nitride semiconductor product according to claim 1 , wherein the nitride semiconductor product has a lateral dimension of at least 24 cm.
3. The nitride semiconductor product according to claim 1 , wherein the nucleation layer and the buffer layer in combination have a layer thickness of at most 400 nm.
4. The nitride semiconductor product according to claim 1 , wherein the nucleation layer is deposited on the silicon surface.
5. The nitride semiconductor product according to claim 1 , wherein at least one of the gallium-containing first nitride semiconductor and the gallium-containing second nitride semiconductor is deposited with a thickness between 800 and 1600 nm.
6. The nitride semiconductor product according to claim 1 , wherein an n-doping is introduced into the gallium-containing first nitride semiconductor layer.
7. The nitride semiconductor product according to claim 1 , further comprising a carrier bonded to the gallium-containing second nitride semiconductor layer.
8. The nitride semiconductor product according to claim 7 , wherein the carrier and the gallium-containing second nitride semiconductor layer are bonded together via a metal layer.
9. The nitride semiconductor product according to claim 7 , wherein the carrier is composed primarily of copper, aluminum, silicon, aluminum nitride, or a combination of aluminum and silicon.
10. The nitride semiconductor product according to claim 7 , wherein the carrier is composed of aluminum-silicon (Al/Si).
11. The nitride semiconductor product according to claim 7 , wherein the carrier is composed of aluminum-silicon (Al/Si) with a silicon content of at least 70%.
12. The nitride semiconductor product according to claim 7 , further comprising an electrically conducting contact layer arranged between the carrier and the second gallium-containing nitride semiconductor layer.
13. The nitride semiconductor product according to claim 12 , wherein the contact layer has a higher refractive index than a p-doped gallium-containing nitride semiconductor cover layer.