SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a semiconductor stack, a protective layer on the semiconductor stack, an electrode on the semiconductor stack and electrically connected to the semiconductor stack, and a conductive bump on the electrode. The thickness of the conductive bump is measured from the topmost point of the conductive bump to the uppermost surface of the protective layer. The ratio of the thickness of the conductive bump to the maximum width of the conductive bump is between 0.1 and 0.4.
1 . A semiconductor device, comprising:
a semiconductor stack;
a protective layer on the semiconductor stack and having an uppermost surface;
a first electrode on the semiconductor stack and electrically connected to the semiconductor stack, wherein the first electrode comprising a first upper surface; and
a first conductive bump on the first electrode and having a first convex outermost surface, a top, and a maximum width, wherein a thickness of the first conductive bump is defined from the top to the uppermost surface, and a ratio of the thickness to the maximum width is from 0.1 to 0.4.
2 . The semiconductor device as claimed in claim 1 , further comprising a plurality of particles discretely distributed within the first conductive bump.
3 . The semiconductor device as claimed in claim 2 , wherein a material of the plurality of particles is the same as a material of the first electrode, and is different from a material of the first conductive bump.
4 . The semiconductor device as claimed in claim 1 , wherein the first electrode has a concave, and the first conductive bump fills the concave.
5 . The semiconductor device as claimed in claim 1 , wherein the first conductive bump is substantially a rectangle in a top view.
6 . The semiconductor device as claimed in claim 1 , wherein, in a cross-sectional view of the first conductive bump, the first convex outermost surface comprises a first curve with a first endpoint in contact with the first upper surface of the first electrode, and a first tangent line of the first curve at the first endpoint form an angle θ 1 in a range of 70° and 90° with respect to the upper surface of the first electrode.
7 . The semiconductor device as claimed in claim 6 , further comprising a second electrode having a second upper surface on the semiconductor stack, and a second conductive bump on the second electrode, wherein in the cross-sectional view, the second conductive bump has a second convex outermost surface comprising a second curve with a second endpoint in contact with the second upper surface of the second electrode, and a second tangent line of the second curve at the second endpoint form an angle θ 2 smaller than θ 1 with respect to the second upper surface of the second electrode.
8 . The semiconductor device as claimed in claim 1 , further comprising a glue material on the protective layer and separated from the conductive bump.
9 . The semiconductor device as claimed in claim 8 , wherein a height of the glue material is smaller than a height of the conductive bump.
10 . A method of manufacturing a semiconductor device, comprising:
providing a substrate;
forming a semiconductor stack on the substrate;
forming an electrode on the semiconductor stack;
forming a bonding pad on the electrode;
forming a glue material on the bonding pad; and
irradiating the bonding pad and the glue material with a laser energy so that the bonding pad is melted to form a conductive bump on the electrode, wherein the conductive bump is covered by the glue material.
11 . The method as claimed in claim 10 , wherein the conductive bump has an outermost surface, and the outermost surface is not parallel with the electrode and has a convex arc shape.
12 . The method as claimed in claim 10 , wherein the electrode and the bonding pad are formed of different materials.
13 . The method as claimed in claim 10 , wherein the conductive bump has a plurality of discretely distributed particles therein, and a material of the plurality of particles is partially the same as a material of the electrode and different from a material of the conductive bump.
14 . The method as claimed in claim 10 , wherein a cross-sectional shape of the conductive bump in a direction parallel to a side length of the electrode is not equal to a cross-sectional shape of the conductive bump in a direction of a diagonal line of the electrode.
15 . The method as claimed in claim 10 , further comprising a step of cleaning the glue material.
16 . A light-emitting device, comprising:
a substrate comprising a plurality of conductive connecting pads;
a semiconductor device on the substrate, wherein the semiconductor device comprises:
a semiconductor stack;
a protective layer on the semiconductor stack and having an uppermost surface; and
an electrode on the semiconductor stack and electrically connected to the semiconductor stack; and
a bonding layer connecting the electrode and one of the plurality of conductive connecting pads, wherein the bonding layer comprise a plurality of particles, and a material of the plurality of particles is different from that of the bonding layer and the same as a material of the electrode.
17 . The light-emitting device according to claim 16 , wherein the plurality of particles is discretely distributed in the bonding layer.
18 . The light-emitting device according to claim 16 , wherein the plurality of particles comprises gold, platinum, or alloys thereof.
19 . The light-emitting device according to claim 16 , wherein the substrate comprises a circuit board of a display, a TFT substrate, a substrate having redistribution layer (RDL), or a sub-mount substrate of a package.
20 . The light-emitting device according to claim 16 , wherein the material of the plurality of particles is the same as a material of the plurality of conductive connecting pads.