Screening edge placement uniformity wafer stochastics
A simulated tool signal is determined from design data and tool properties of the tool making the measurements. A design-assisted composite signal is determined from measurements. An edge placement uniformity signal is then determined by comparing the simulated tool signal and the design-assisted composite signal. A shape and/or an area of the edge placement uniformity signal can be analyzed. The edge placement uniformity signal enables screening of structures with respect to wafer stochastics without the need to fully characterize all individual structures.
1 . A method comprising:
determining, using a processor, a design-assisted composite signal from a plurality of features on a wafer using measurements of the wafer from a wafer metrology tool and a design of the wafer, wherein the design-assisted composite signal is a combination of the measurements;
determining, using the processor, a simulated tool signal for the design of the wafer that accounts for noise sources and imaging properties of the wafer metrology tool;
determining, using the processor, an edge placement uniformity signal that is a difference between the design-assisted composite signal and the simulated tool signal; and
analyzing a shape and/or an area of the edge placement uniformity signal thereby determining placement of stochastics, wherein the shape and the area are caused by at least the stochastics.
2 . The method of claim 1 , wherein the wafer metrology tool is a scanning electron microscope.
3 . The method of claim 1 , wherein the measurements of the wafer are generated during overlay measurements of the wafer.
4 . The method of claim 1 , further comprising determining a distribution of edge placement errors based on the shape.
5 . The method of claim 4 , further comprising inspecting the wafer at locations with the edge placement errors.
6 . The method of claim 1 , wherein the measurements are of a plurality of lines of devices on the wafer.
7 . The method of claim 6 , wherein each of the plurality of lines has one of the edge placement uniformity signals.
8 . The method of claim 1 , further comprising comparing, using the processor, the edge placement uniformity signal against a specification for the wafer.
9 . The method of claim 1 , wherein the design-assisted composite signal is an average of the measurements.
10 . The method of claim 1 , wherein the feature is an edge of a structure on the wafer.
11 . The method of claim 1 , wherein the feature is a center of a structure on the wafer.
12 . A non-transitory computer readable medium storing a program configured to instruct the processor to execute the method of claim 1 .
13 . A system comprising:
a particle beam source that generates a particle beam;
a stage configured to hold a wafer in a path of the particle beam;
a detector that receives particles from the wafer; and
a processor in electronic communication with the detector, wherein the processor is configured to:
determine a design-assisted composite signal from a plurality of features on the wafer using measurements of the wafer and a design of the wafer, wherein the design-assisted composite signal is a combination of the measurements;
determine a simulated tool signal for the design of the wafer that accounts for noise sources and imaging properties of the wafer metrology tool;
determine an edge placement uniformity signal that is a difference between the design-assisted composite signal and the simulated tool signal; and
analyze a shape and/or an area of the edge placement uniformity signal thereby determining placement of stochastics, wherein the shape and the area are caused by at least the stochastics.
14 . The system of claim 13 , wherein the system is a scanning electron microscope.
15 . The system of claim 13 , wherein the processor is further configured to determine distribution of edge placement errors based on the shape.
16 . The system of claim 15 , wherein the processor is further configured to send instructions to inspect the wafer at locations with the edge placement errors using the particle beam.
17 . The system of claim 13 , wherein the processor is further configured to compare the edge placement uniformity signal against a specification for the wafer.
18 . The system of claim 13 , wherein the particle beam is an electron beam, a photon beam, an ion beam, or a neutral particle beam.