IP Library Granted Patent US 11,935,987
Granted Patent B2
US 11,935,987 · App. 17/973,070 · Granted Mar 19, 2024

Light emitting diode arrays with a light-emitting pixel area

Inventors: Toni Lopez (Vaals, NL); Erik William Young (San Jose, CA); Rajiv Pathak (Milpitas, CA)
Assignee: Lumileds LLC
H01L33/382H01L27/156H01L33/0093H01L33/62H01L2933/0016H01L2933/0066
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Quick Facts
Patent No.
US 11,935,987
App. No.
17/973,070
Granted
Mar 19, 2024
Kind
B2
Abstract

A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.

Claims (17)

1. A light emitting diode (LED) array comprising:

a light-emitting pixel area integral to a monolithic body, the light-emitting pixel area including semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer;

the monolithic body comprising a first portion of an N-type layer, the second portion of the N-type layer being integral to the first portion of the N-type layer;

a plurality of anodes, each anode comprising a P-contact layer and one or more P-contact materials, each P-contact layer being in contact with the P-type layer;

a common cathode comprising one or more N-contact materials in contact with the first portion of the N-type layer;

one or more dielectric materials insulating: the second portion of the N-type layer, the active region, and the P-type layer from the common cathode; the plurality of anodes from each other; and the plurality of anodes from the common cathode.

2. The light emitting diode (LED) array of claim 1 , wherein the P-contact layer of each of the anodes comprises an anode current spreading layer and a reflective layer.

3. The light emitting diode (LED) array of claim 1 , wherein each of the anodes comprises one or more via openings defined by via dielectric material.

4. The light emitting diode (LED) array of claim 1 further comprising cathode metallization bumps on accessible portions of the N-contact materials, and anode metallization bumps on accessible portions of the P-contact materials, wherein the cathode metallization bumps and the anode metallization bumps are on the same side of the semiconductor layers.

5. The light emitting diode (LED) array of claim 1 further comprising a body current spreading layer contacting the first portion of the N-type layer on a surface opposite from the common cathode.

6. The light emitting diode (LED) array of claim 5 further comprising a device substrate and a body bonding layer contacting the device substrate and the body current spreading layer on a surface opposite from the first portion of the N-type layer.

7. The light emitting diode (LED) array of claim 1 , wherein the common cathode comprises a first edge cathode along a first side of the light-emitting pixel area and a second edge cathode along a second side of the light-emitting pixel area opposite the first side of the light-emitting pixel area.

8. The light emitting diode (LED) array of claim 7 , wherein the common cathode further comprises a third edge cathode along a third side of the light-emitting pixel area and a fourth edge cathode along a fourth side of the light-emitting pixel area opposite the third side of the light-emitting pixel area.

9. The light emitting diode (LED) array of claim 1 , wherein in use the light-emitting pixel area is effective to minimize appearance of pixilation.

10. The light emitting diode (LED) array of claim 1 , wherein the anodes are individually addressable.

11. The light emitting diode (LED) array of claim 1 , wherein in use the semiconductor layers are effective to deliver a single color.

12. A display comprising: a plurality of light emitting diode (LED) arrays according to claim 1 affixed to a device substrate, wherein a first plurality of arrays comprises a red color, a second plurality of arrays comprises a blue color, and a third plurality of arrays comprises a green color.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 10, 2025
From: LUMILEDS LLC
To: LUMILEDS SINGAPORE PTE. LTD.
Reel/Frame 071888/0086 →
RELEASE OF SECURITY INTEREST Recorded Jan 29, 2025
From: SOUND POINT AGENCY LLC
To: LUMILEDS LLC; LUMILEDS HOLDING B.V.
Reel/Frame 070046/0001 →
SECURITY INTEREST Recorded Jan 5, 2023
From: LUMILEDS LLC; LUMILEDS HOLDING B.V.
To: SOUND POINT AGENCY LLC
Reel/Frame 062299/0338 →
PATENT SECURITY AGREEMENT Recorded Dec 9, 2022
From: LUMILEDS, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 062114/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 26, 2022
From: LOPEZ, TONI; YOUNG, ERIK WILLIAM; PATHAK, RAJIV
To: LUMILEDS LLC
Reel/Frame 061547/0976 →