Integrated power switching device heat sink
An electrical assembly that with an inverter that is mounted to the field windings of a stator. The inverter has a plurality of power semiconductor packages (PSP), each of which including a semiconductor die, a plurality of electric terminals, which are electrically coupled to the semiconductor die, and a heat sink with a base, which is fixedly and electrically coupled to one of the electric terminals, and a plurality of fins that extend axially from the base in a direction away from the semiconductor die. The PSP's are arranged in a circumferentially spaced apart manner. The fins are arranged in rows and are progressively longer in length from a radially-inner most fin to a radially-outer most fin. Slots are formed in the base on a radially-inner side of the base. Each slot extends toward a radially-outer side of the base and intersects a corresponding one of the rows of fins.
1. An electrical assembly comprising:
a stator having a plurality of field windings, each of the field windings having an associated phase leads; and
an inverter having an inverter mount and a plurality of power semiconductor packages, the inverter mount having an annular mounting flange and a plurality of phase lead bosses that are coupled to the annular mounting flange, each of the phase leads being received through a corresponding one of the phase lead bosses, each of the power semiconductor packages having a semiconductor die ( 266 ), a plurality of electric terminals, and a heat sink, each of the electric terminals being electrically coupled to the semiconductor die ( 266 ), the heat sink having a base and a plurality of fins, the base being fixedly and electrically coupled to one of the electric terminals, each of the fins extending axially from the base in a direction away from the semiconductor die ( 266 ), each of the power semiconductor packages being mounted to the inverter mount such that at least a portion of the electric terminals of each of the power semiconductor packages extends through the mounting flange, wherein the power semiconductor packages are arranged in a circumferential spaced apart manner, wherein the fins of each heat sink are arranged in rows, wherein the fins in each row taper such that a radially-inner most one of the fins in each of the rows is shorter than a radially-outer most one of the fins in each of the rows, and wherein a plurality of slots are formed in the base on a radially-inner side of the base, each of the slots extending toward a radially-outer side of the base and intersecting a corresponding one of the rows of fins.
2. The electrical assembly of claim 1 , wherein each row that is intersected by one of the slots has a first quantity of the fins and each row that is not intersected by one of the slots has a second quantity of the fins that is greater than the first quantity.
3. The electrical assembly of claim 1 , wherein each of the fins has a first end which is fixedly coupled to the base, and a second end that is opposite the first end, and wherein each of the fins tapers between the first and second ends.
4. The electrical assembly of claim 1 , wherein the fins in adjacent rows are staggered from one another.
5. The electrical assembly of claim 1 , wherein the base tapers between the radially-inner side of the base and the radially-outer side of the base.
6. The electrical assembly of claim 5 , wherein the radially-inner side of the base is thinner than the radially-outer side of the base.
7. The electrical assembly of claim 1 , wherein the power semiconductor package comprises an insulated gate bipolar transistor (IGBT), a metal oxide silicon field effect transistor (MOSFET), or a junction field effect transistor (JFET).
8. The electrical assembly of claim 1 , wherein the base and the one of the electric terminals are integrally and unitarily formed.
9. The electrical assembly of claim 1 , wherein each heat sink is integrally and unitarily formed.
10. The electrical assembly of claim 1 , wherein the heat sink and the one of the electric terminals are unitarily and integrally formed.