Patent Application

App. No. 17/977,025

Abstract

Claims (30)

1 . A light emitting diode array comprising:

a growth mask comprising an array of closed shapes on a III-N layer, the III-N layer epitaxially grown on a substrate;

an array of group III-N inverted pyramids epitaxially grown around the growth mask, the inverted pyramids comprising {10-11} or {11-22} facets and hexagonal bases;

an array of III-N c-plane surfaces parallel with the substrate joining the {10-11} or {11-22} facets of adjacent ones of the III-N inverted pyramids;

a quantum well layer comprising a III-N compound formed on the {10-11} or {11-22} facets and the c-plane surfaces, the quantum well layer having a first thickness on the {10-11} or {11-22} facets forming first light emitting elements, the quantum well layer having a second thickness on the c-plane surfaces forming second light emitting elements, the second thickness greater than the first thickness such that the second light emitting elements emit light at a longer wavelength than the first light emitting elements; and

a pattern of electrical contacts over the light emitting array that are operable to separately activate the first light emitting elements and the second light emitting elements.

2 . The light emitting diode array of claim 1 , wherein the longer wavelength comprises a green wavelength.

3 . The light emitting diode array of claim 1 , wherein the longer wavelength comprises a red wavelength.

4 . The light emitting diode array of claim 1 , wherein the III-N compound comprises GaInN.

5 . The light emitting diode array of claim 4 , wherein a concentration of In in the GaInN is greater on the c-plane surfaces than on the {10-11} or {11-22} facets.

6 . The light emitting diode array of claim 4 , further comprising a p-GaN material layer covering the quantum well layer, the p-GaN material layer having a third thickness over the {10-11} or {11-22} facets and a fourth thickness over the c-plane surfaces, the third thickness greater than the fourth thickness, a subset of the electrical contacts coupled to the p-GaN material layer.

7 . The light emitting diode array of claim 1 , wherein the c-plane surfaces are triangularly shaped.

8 . The light emitting diode array of claim 1 , wherein a portion of the inverted pyramids are covered by phosphors or quantum dot materials to down-convert the light emitted from the portion of the inverted pyramids.

9 . The light emitting diode array of claim 1 , wherein the inverted pyramids comprise {10-11} facets.

10 . The light emitting diode array of claim 1 , wherein the pattern of electrical contacts over the light emitting array comprise positive contacts on the {10-11} or {11-22} facets and the c-plane surfaces and negative contacts on a bottom surface of the substrate facing away from the {10-11} or {11-22} facets and the c-plane surfaces.

11 . The light emitting diode array of claim 10 , wherein the light emitting diode array emits light from the {10-11} or {11-22} facets and the c-plane surfaces, and wherein the positive contacts are made from a transparent conductor.

12 . The light emitting diode array of claim 10 , wherein the light emitting diode array emits light from the bottom surface of the substrate, and wherein the positive contacts are made from a reflective conductor.

13 . The light emitting diode array of claim 1 , wherein the growth mask comprises a dielectric material.

14 . The light emitting diode array of claim 1 , wherein the substrate comprises sapphire, silicon, GaN, or AlN.

15 . A display comprising the light emitting diode array of claim 1 .

16 . The display of claim 15 , wherein the {10-11} or {11-22} facets and the c-plane surfaces comprise subpixels of the display.

17 . A method comprising:

epitaxially forming a III-N base layer on a growth template or substrate;

patterning an array of closed shapes of a mask material on a top plane of the III-N base layer;

selective epitaxial growing of III-N structures around the array of closed shapes and extending above the closed shapes to form a first array of III-N inverted pyramids and a second array of III-N c-plane surfaces, the inverted pyramids comprising {10-11} or {11-22} facets and hexagonal bases, the III-N c-plane surfaces parallel with the III-N base layer and joining the {10-11} or {11-22} facets of adjacent ones of the III-N inverted pyramids;

epitaxially growing a quantum well layer comprising a III-N compound on the {10-11} or {11-22} facets and the c-plane surfaces, the quantum well layer having a first thickness on the {10-11} or {11-22} facets forming first light emitting elements, the quantum well layer having a second thickness on the c-plane surfaces forming second light emitting elements, the second thickness greater than the first thickness such that the second light emitting elements emit light at a longer wavelength than the first light emitting elements; and

depositing a pattern of electrical contacts over the first light emitting elements and the second light emitting elements, the electrical contacts being operable to separately activate the first light emitting elements and the second light emitting elements.

18 . The method of claim 17 , wherein the III-N compound comprises GaInN.

19 . The method of claim 18 , wherein a concentration of In in the GaInN is greater on the c-plane surfaces than on the {10-11} or {11-22} facets.

20 . The method of claim 17 , wherein the inverted pyramids comprise {10-11} facets.

Assignments (8)