Memory system with selective access to first and second memories
A memory system includes a nonvolatile memory having a plurality of nonvolatile memory chips incorporated therein, a control circuit that controls the nonvolatile memory, an MPU that controls the control circuit, and an interface circuit that communicates with a host, all of which are mounted on a board of the memory system, and the memory system further includes a bus switch that switches connection of a signal line between the control circuit and the nonvolatile memory chips.
1. A memory device comprising:
a plurality of memory chips including at least a first memory chip;
a first signal line configured to receive a first signal, the first signal including IO data;
a second signal line configured to receive a first enable signal, the first enable signal selecting first target memory chips among the plurality of memory chips; and
a third signal line configured to receive a second enable signal different from the first enable signal, the second enable signal selecting second target memory chips among the plurality of memory chips; wherein
in a case where the first memory chip is included in both of the first target memory chips and the second target memory chips, the first memory chip is enabled to be accessed by the first signal.
2. The memory device according to claim 1 , wherein
the memory device is connectable to a memory controller, and the memory controller is configured to control a signal transition of the first signal and signal transitions of the first and second enable signals.
3. The memory device according to claim 2 , wherein
the plurality of memory chips further includes a second memory chip,
in a case where the second memory chip is included in the first target memory chips and is not included in the second target memory chips, the second memory chip is not enabled to be accessed by the first signal.
4. A memory system comprising:
the memory device according to claim 3 ; and
a memory controller connected to the memory device and configured to control a signal transition of the first signal and signal transitions of the first and second enable signals.
5. The memory device according to claim 2 , wherein
the first target memory chips include no memory chip that is included in the second target memory chips, and the second target memory chips include no memory chip that is included in the first target memory chips.
6. A memory system comprising:
the memory device according to claim 5 ; and
a memory controller connected to the memory device and configured to control a signal transition of the first signal and signal transitions of the first and second enable signals.
7. The memory device according to claim 1 , wherein
the plurality of memory chips further includes a third memory chip,
in a case where the third memory chip is included in neither the first target memory chips nor second target memory chips, the third memory chip is not enabled to be accessed by the first signal.
8. A memory system comprising:
the memory device according to claim 7 ; and
a memory controller connected to the memory device and configured to control a signal transition of the first signal and signal transitions of the first and second enable signals.
9. The memory device according to claim 1 , wherein
each of the plurality of memory chips includes a plurality of memory cells, and
the memory device is a NAND flash memory device.
10. A memory system comprising:
the memory device according to claim 9 ; and
a memory controller connected to the memory device and configured to control a signal transition of the first signal and signal transitions of the first and second enable signals.
11. A memory system comprising:
the memory device according to claim 1 ; and
a memory controller connected to the memory device and configured to control a signal transition of the first signal and signal transitions of the first and second enable signals.