IP Library Granted Patent US 12,455,502
Granted Patent B2
US 12,455,502 · App. 17/983,972 · Granted Oct 28, 2025

Device and method for generating photomasks

Inventors: Charlotte Beylier (Meylan, FR); Mauricio Garcia Suarez (Santiago, CL); Pascal Urard (Theys, FR); Guillaume Landie (Lumbin, FR)
Assignees: STMicroelectronics (Crolles 2) SAS; STMicroelectronics France
G03F1/70G03F7/705G06F30/27G06F30/398G06N3/094G06F2119/18G06N3/0455G06N3/0475
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Quick Facts
Patent No.
US 12,455,502
App. No.
17/983,972
Granted
Oct 28, 2025
Kind
B2
Abstract

The present description concerns a method that includes the compression, by a processor, of an image comprising first patterns by transforming the image into a first representation formed of two-point elements. The method also includes the execution, by a neural network, of an inference operation on the first representation to generate a second representation formed of two-point elements. The method further includes the generation of a lithographic mask based on the decompression of the second representation.

Claims (35)

1. A method, comprising:

compressing, by a processor, an image comprising first patterns, by transforming the image into a first representation formed of two-point elements, the image covering a surface contained in a plane;

wherein the image is compressed by:

projecting a vertex of a first polygon of the image onto a first point of a first curve running throughout a first surface of the plane; and

projecting the vertex onto a second point of a second curve running throughout a second surface around the first point, the second surface having an area smaller than the area of the first surface;

executing, by a neural network, an inference operation on the first representation to generate a second representation formed of two-point elements; and

generating a lithographic mask based on decompression of the second representation.

2. The method according to claim 1 , further comprising using the lithographic mask to obtain patterns on a photoresist covering a substrate of a wafer by lithography and then performing an etching process to form corresponding patterns in the substrate.

3. The method according to claim 1 , wherein the image is represented in vector format.

4. The method according to claim 1 , wherein the first surface and/or the second surface is a rectangle.

5. The method according to claim 1 , wherein the first surface and/or the second surface is a right-triangle.

6. The method according to claim 1 , wherein the first surface and/or the second surface comprises a first right-triangle and a second right-triangle arranged as a rectangle, and the first representation comprises a bit indicating in which of the first right-triangle and the second right-triangle the first point and/or the second point is located.

7. The method according to claim 1 , wherein the first surface is a rectangle and the second surface comprises at least one right-triangle.

8. The method according to claim 1 , wherein the image is formed of a plurality of polygons, the compression comprising two-point compression of each vertex of each polygon and two-point compression of at least certain perimetric points of each polygon which are not vertices.

9. The method according to claim 8 , comprising comparing a length of each edge of each polygon with a threshold length and, when the length of an edge exceeds the threshold length, compressing at least one perimetric point on this edge.

10. The method according to claim 9 , wherein the threshold length is shorter than a minimum distance separating any two polygons from among the plurality of polygons.

11. The method according to claim 1 , further comprising segmenting the image into a plurality of sub-images, said steps of compressing and generating the mask being applied to each of the sub-images.

12. A method, comprising:

training a neural network to generate lithographic masks by:

generating, at least partially by the neural network, an image representing a lithographic mask;

wherein generating the image representing a lithographic mask comprises projecting a vertex of a first polygon onto a first point of a first curve running throughout a first surface of a plane and projecting the vertex onto a second point of a second curve running throughout a second surface around the first point, the second surface having an area smaller than the area of the first surface;

estimating, by using a lithographic simulation tool, a pattern resulting from the use of the mask;

comparing the resulting pattern and a reference pattern; and

modifying one or a plurality of parameters of the neural network based on the comparison; and

printing the image representing the lithographic mask on a support to produce the lithographic mask.

13. The method according to claim 12 , wherein generating the image comprises:

compressing, by an algorithm implemented by a data processing device, a first image containing first patterns by transforming the image into a first representation formed of two-point elements;

applying the first representation to the neural network to generate a second representation formed of two-point elements; and

generating the image based on a decompression of the second representation.

14. The method according to claim 12 , wherein the neural network is a generative adversarial network comprising a generator network being a first autoencoder and a discriminator network being a second autoencoder.

15. The method according to claim 14 , wherein the first autoencoder and/or the second autoencoder is of U-net type.

16. The method according to claim 12 , wherein the training of the neural network is performed iteratively, and, at each iteration:

a loss is calculated, by using a loss function, based on the comparison between the resulting pattern and the reference pattern; and

modifying one or a plurality of parameters of the network comprises updating of synaptic weights of the neural network based on the calculated loss.

17. The method according to claim 12 , further comprising using the lithographic mask to obtain patterns on a photoresist covering a substrate of a wafer by lithography and then performing an etching process to form corresponding patterns in the substrate.

Assignments (3)
CHANGE OF NAME Recorded Feb 23, 2024
From: STMICROELECTRONICS SA
To: STMICROELECTRONICS FRANCE
Reel/Frame 066663/0136 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2022
From: BEYLIER, CHARLOTTE; LANDIE, GUILLAUME
To: STMICROELECTRONICS (CROLLES 2) SAS
Reel/Frame 061710/0982 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2022
From: GARCIA SUAREZ, MAURICIO; URARD, PASCAL
To: STMICROELECTRONICS SA
Reel/Frame 061711/0049 →
Priority Claims (1)
FR 2111964 · Nov 10, 2021 · national
Continuity (1)
Related Publication 20230141388A1 · May 11, 2023
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