VACUUM CHAMBER, VACUUM SYSTEM AND METHOD FOR VACUUM PROCESSING
A vacuum chamber for vacuum processing is provided. The vacuum chamber includes at least one device comprising at least one treated surface, the at least one treated surface being provided by ultra-short pulse laser surface treatment. The at least one treated surface is positioned and shaped so as to provide thermal energy to and/or absorb thermal energy from a component, the component being positioned in a relative position to the at least one treated surface.
1 . A vacuum chamber for vacuum processing, the vacuum chamber comprising:
at least one device comprising at least one treated surface, the at least one treated surface being provided by ultra-short pulse laser surface treatment;
wherein the at least one treated surface is positioned and shaped so as to one selected of the group of providing thermal energy to and absorbing thermal energy from a component, the component being positioned in a relative position to the at least one treated surface.
2 . The vacuum chamber for vacuum processing according to claim 1 , wherein the at least one treated surface comprises a metallic material to provide at least one treated metallic surface.
3 . The vacuum chamber for vacuum processing according to claim 2 , wherein an emissivity difference between the at least one treated metallic surface and an untreated metallic surface comprising a same metallic material, is in the range of 0.5 to 0.81.
4 . The vacuum chamber for vacuum processing according to claim 1 , wherein the component is selected from the group of a temperature-controllable component, a measurement device or combinations thereof.
5 . The vacuum chamber for vacuum processing according to claim 4 , wherein the temperature-controllable component comprises one selected from the group of a substrate, a material provision source, a vacuum chamber wall and a substrate support.
6 . The vacuum chamber for vacuum processing according to claim 1 , wherein the vacuum chamber comprises the component.
7 . The vacuum chamber for vacuum processing according to claim 1 , wherein the at least one treated surface has an emissivity in the range of ≥ 0.3 to ≥ 0.7 at 100° C.
8 . The vacuum chamber for vacuum processing according to claim 2 , wherein the at least one treated metallic surface has an emissivity in the range of ≥ 0.3 to ≥ 0.7 at 100° C.
9 . (canceled)
10 . The vacuum chamber for vacuum processing according to claim 2 , wherein the metallic material is one selected of the group of a transition metal, an alkaline earth metal, a metal of the boron group, a metal alloy or any combinations thereof.
11 . The vacuum chamber for vacuum processing according to claim 2 , wherein the metallic material comprises one selected of the group of copper, molybdenum, nickel, magnesium, alumina, stainless steel, brass or any combinations thereof.
12 . The vacuum chamber for vacuum processing according to claim 1 , wherein the at least one treated surface comprises an alumina-magnesium-alloy having an emissivity in the range of ≥ 0.5to ≥ 0.9 at 100° C.
13 . The vacuum chamber for vacuum processing according to claim 1 , wherein the at least one treated surface comprises copper having an emissivity in the range of ≥ 0.5 to ≥ 0.8 at 100° C.
14 . The vacuum chamber for vacuum processing according to claim 1 , wherein the treated surface comprises stainless steel having an emissivity in the range of ≥ 0.6 to ≥ 0.9 at 100° C.
15 . The vacuum chamber for vacuum processing according to claim 1 , wherein the treated surface comprises brass having an emissivity in the range of ≥ 0.6 to ≥ 0.72 at 100° C.
16 . The vacuum chamber for vacuum processing according to claim 1 , wherein the treated surface comprises molybdenum having an emissivity in the range of ≥ 0.6 to ≥ 0.8 at 100° C.
17 . The vacuum chamber for vacuum processing according to claim 1 , wherein the at least one device is selected from the group of a chamber wall of the vacuum chamber, a plate, a material provision source, a substrate support, a shield or combinations thereof.
18 . The vacuum chamber for vacuum processing according to claim 17 , wherein the vacuum chamber comprises one selected of the group of a material provision source and a plate for absorbing thermal radiation from the material provision source, a material provision source comprising a crucible and a heater, the crucible having at least one first treated surface and the heater having at least one second treated surface, the at least one first treated surface and the at least one second treated surface facing each other, and a substrate support, the substrate support having at least one treated surface portion.
19 . (canceled)
20 . (canceled)
21 . The vacuum chamber for vacuum processing according to claim 18 , wherein the vacuum chamber further comprises a measurement device, the measurement device being arranged for measuring a value at the at least one treated surface portion.
22 . (canceled)
23 . A vacuum system comprising
at least one vacuum chamber according to claim 1 .
24 . (canceled)
25 . A method for controlling a temperature in a vacuum system, the method comprising:
treating at least one surface with an ultra-short pulse laser to obtain at least one treated surface, the at least one treated surface being positioned and shaped so as to on selected of the group of providing thermal energy to and absorbing thermal energy from a component;
providing the at least one treated surface in a vacuum chamber;
positioning the component relative to the at least one treated surface; and
providing one selected from thermal energy to and absorbing thermal energy from the component with the at least one treated surface.