Preparation method for perovskite film, and related perovskite film and solar cell
The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.
1. A method for preparing a perovskite film, including steps of
(1) providing a target material comprising following elements: lead, a halogen, and one or more alkali metals;
(2) sputtering using the target material in step (1) with a process gas, where the process gas is a noble gas so as to obtain a film;
(3) subjecting the film obtained in step (2) to a chemical bath treatment using a chemical bath, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and
(4) sputtering on the film obtained in step (3) using a tin metal with another process gas, where the another process gas comprises a noble gas so as to obtain the perovskite film.
2. The method according to claim 1 , wherein
the target material in step (1) comprises 10-40% of an alkali metal, 10-40% of lead and 50-90% of the halogen, with a total of 100%, based on the total moles of the various elements in the target material.
3. The method according to claim 1 , wherein
in step (1), the halogen is one or more of chlorine, bromine or iodine, and the one or more alkali metals comprise one or more of potassium, rubidium or cesium.
4. The method according to claim 1 , wherein
the solution of AX in step (3) has a concentration of 10-100 mg/ml.
5. The method according to claim 1 , wherein
the chemical bath treatment in step (3) is carried out at a temperature of 40° C.-120° C.
6. The method according to claim 1 , wherein
the another process gas in step (4) comprises a halogen gas and a volume ratio of the noble gas to the halogen gas in step (4) is 10:1 to 5:1.
7. The method according to claim 1 , wherein
the another process gas in step (4) comprises a halogen gas and the halogen gas in step (4) includes one or more of iodine vapor, bromine vapor or chlorine vapor.
8. The method according to claim 1 , wherein
the step (4) is carried out at a temperature of 50° C.-250° C.