Perovskite-containing scintillators and methods of making the same
An aspect of the present disclosure is a method of making a device, wherein the method includes, in order, depositing a layer of a photoresist onto a substrate, depositing a mask onto the photoresist, developing the photoresist, resulting in the forming of a grid having a plurality of cavities, and depositing a semiconductor onto the grid, resulting in substantially filling each cavity with the semiconductor.
1. A scintillator comprising:
a substrate;
a plurality of cavities; and
a semiconductor at least partially filling each cavity, wherein:
each cavity is defined by the substrate and at least three sidewalls comprising a photoresist, with each sidewall positioned substantially perpendicular to the substrate,
each sidewall is at least partially covered by a side reflector, and
the substrate is substantially transparent.
2. The scintillator of claim 1 , further comprising a photodiode, wherein the substrate is positioned between the plurality of cavities and the photodiode.
3. The scintillator of claim 2 , further comprising:
a complementary metal oxide semiconductor (CMOS) chip or a thin film transistor (TFT) array, wherein:
the photodiode is positioned beneath the substrate and within the CMOS chip or TFT array.
4. The scintillator of claim 1 , further comprising:
a top reflector positioned adjacent to the plurality of cavities, wherein:
the plurality of cavities is positioned between the top reflector and the substrate.
5. The scintillator of claim 4 , further comprising:
an encapsulating layer positioned adjacent to the top reflector, wherein:
the top reflector is positioned between the encapsulating layer and the plurality of cavities.
6. The scintillator of claim 4 , wherein the top reflector has a thickness between about greater than zero μm and 500 μm.
7. The scintillator of claim 4 , wherein the top reflector is constructed of at least one of beryllium, aluminum, or amorphous carbon.
8. The scintillator of claim 1 , wherein the scintillator is configured to receive incoming light comprising x-rays.
9. The scintillator of claim 8 , wherein the semiconductor is capable of absorbing the incoming light and emitting light having a wavelength between 400 nm and 550 nm.
10. The scintillator of claim 1 , wherein the semiconductor comprises at least one of a perovskite, CdSe, Cs 3 Cu 2 I 5 , or PbS.
11. The scintillator of claim 10 , wherein the perovskite comprises at least one of FA 1-x Cs x PbBr 3 or CsPbI 3-y Br y , 0≤x≤1, and 0≤y≤3.
12. The scintillator of claim 1 , wherein each cavity has a depth between 50 μm and 5 mm.
13. The scintillator of claim 12 , wherein the depth is between 250 μm and 1 mm.
14. The scintillator of claim 1 , wherein the substrate comprises at least one of a glass, quartz, or sapphire.
15. A method of making a scintillator, the method comprising, in order:
depositing a layer of a photoresist onto a substrate;
depositing a mask onto the photoresist;
developing the photoresist, resulting in the forming of a grid comprising a plurality of cavities, each cavity defined by at least three walls comprising the developed photoresist and the substrate; and
depositing a semiconductor onto the grid, resulting in at least partially filling each cavity with the semiconductor.
16. The method of claim 15 , further comprising depositing a top reflector onto the grid and the semiconductor.
17. The method of claim 16 , further comprising depositing an encapsulating layer onto the top reflector.
18. The method of claim 15 , wherein depositing the semiconductor is performed by a solution processing method.
19. The method of claim 15 , wherein depositing the semiconductor comprises coating the grid with a solution comprising a perovskite precursor.
20. The method of claim 19 , wherein:
the perovskite precursor is capable of forming a perovskite comprising at least one of FA 1-x Cs x PbBr 3 or CsPbI 3-y Br y ,
0≤x≤1, and 0≤y≤3.