SYSTEM FOR DEPOSITING PIEZOELECTRIC MATERIALS, METHODS FOR USING THE SAME, AND MATERIALS DEPOSITED WITH THE SAME
A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.
1 . A system for depositing material onto a substrate, the system comprising:
two or more process modules comprising:
an off-axis module constructed to deposit material at an inclined c-axis; and
a longitudinal module constructed to deposit material at normal incidence;
a central wafer transfer unit comprising a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and
a control unit operatively connected to the robot.
2 . The system of claim 1 , wherein the central housing unit comprises a cooling station constructed to control wafer temperature.
3 . The system of claim 1 , wherein the two or more process modules comprise a pre-sputter module constructed to prepare wafer substrates for deposition of material.
4 . The system of claim 3 , wherein the pre-sputter module comprises a plasma sputtering device.
5 . The system of claim 3 , wherein the pre-sputter module comprises a degassing unit, a wafer heater, or both.
6 . The system of claim 1 , wherein the central wafer transfer unit is positioned centrally between the two or more process modules.
7 . The system of claim 1 , wherein each of the two or more process modules comprises an internal environment that is controlled separately from the central wafer transfer unit.
8 . The system of claim 1 , wherein each of the two or more process modules is separated from the central housing unit by a valve.
9 . The system of claim 1 , wherein the robot is constructed to transfer the wafer substrate in a horizontal position.
10 . The system of claim 1 , wherein the off-axis module comprises a wafer chuck constructed to receive the wafer substrate.
11 . The system of claim 10 , wherein the wafer chuck is constructed to receive the wafer substrate in a horizontal position and to rotate the wafer substrate to a vertical position.
12 . The system of claim 11 , wherein the wafer chuck is constructed to translate the wafer substrate in the vertical position.
13 . The system of claim 1 further comprising a cassette elevator for housing a plurality of wafer substrates accessible by the robot.
14 . The system of claim 13 , wherein the robot is constructed to retrieve a wafer substrate from the cassette elevator and to transfer the retrieved wafer substrate to one of the process modules.
15 . The system of claim 1 , wherein the off-axis module comprises a chamber, a vacuum pump constructed to create a vacuum in the chamber, and a linear sputtering apparatus housed within the chamber, wherein the chamber is separated from the central housing unit by a gate valve.
16 . The system of claim 1 , wherein the off-axis module comprises:
a linear sputtering apparatus comprising a target surface configured to eject metal atoms;
a wafer chuck comprising a support surface and configured to receive and secure in place a wafer substrate; and
a collimator comprising a plurality of guide members defining a plurality of collimator apertures arranged between the linear sputtering apparatus and the wafer chuck, the collimator being linearly translatable in a direction substantially parallel to the target surface,
wherein the target surface is arranged non-parallel to the support surface.
17 . The system of claim 16 , wherein the linear sputtering apparatus comprises a linear magnetron with a sputtering cathode operatively coupled to the target surface to promote ejection of metal atoms from the target surface.
18 . The system of claim 17 , wherein the support surface is disposed along a vertical plane that is non-parallel to the target surface.
19 . The system of claim 18 , wherein the target surface has a longitudinal axis that is oriented along a horizontal line.
20 . The system of claim 19 , wherein the support surface is configured to ratchet up and down along its vertical plane.
21 . The system of claim 1 further comprising a second off-axis module.
22 . The system of claim 1 , wherein the longitudinal module comprises a chamber, a vacuum pump constructed to create a vacuum in the chamber, and a circular sputtering apparatus housed within the chamber, wherein the chamber is separated from the central housing unit by a gate valve.
23 . The system of claim 1 , wherein the longitudinal module comprises:
a circular sputtering apparatus comprising a target surface configured to eject metal atoms; and
a wafer chuck comprising a support surface and configured to receive and secure in place a wafer substrate,
wherein the target surface is arranged parallel to the support surface.
24 - 42 . (canceled)