Trench sic power semiconductor device
A power semiconductor device comprises a drift layer of a first conductivity type, a source layer of the first conductivity type on the drift layer, with an insulated trench gate electrode which extends through the source layer into the drift layer, and an implant layer of a second conductivity type different than the first conductivity type with a homogeneous doping region having a doping variation of at most 8%. The homogeneous doping region is arranged between the source layer and the drift layer and has a homogeneous doping region thickness of at least 150 nm. A method is provided for producing a power semiconductor device with an insulated trench gate electrode.
1 . A method for manufacturing a Silicon Carbide (SiC) power semiconductor device with an insulated trench gate electrode, comprising the steps of:
providing a drift layer of a first conductivity type;
forming a source layer of the first conductivity type on the drift layer;
forming the insulated trench gate electrode which extends through the source layer into the drift layer;
implanting ions of a second conductivity type, which is different than the first conductivity type into the drift layer to produce an implant layer of the second conductivity type with a homogeneous doping region having a doping variation of at most 8%, and
partially removing the source layer such that a section of the drift layer is uncovered, wherein the homogeneous doping region is arranged between the source layer and the drift layer and has a homogeneous doping region thickness of at least 150 nm.
2 . The method according to claim 1 , wherein the homogeneous doping region has a doping concentration in a range from 2×1017 1/cm3 to 9×1017 1/cm3.
3 . The method according to claim 1 , wherein the homogeneous doping region thickness is at least 200 nm.
4 . The method according to claim 1 , wherein the homogeneous doping region thickness is at most 400 nm.
5 . The method according to claim 1 , wherein the implant layer has a thickness between 300 nm and 700 nm.
6 . The method according to claim 1 , wherein the step of implanting ions includes implanting ions for different depths, wherein doses for the different depths are obtained based on a numerical optimization.
7 . The method according to claim 1 , wherein the step of forming the insulated trench gate electrode is carried out before the step of implanting ions.
8 . The method according to claim 1 , wherein the step of forming the source layer is made by epitaxial growth.
9 . The method according to claim 1 , wherein the step of implanting ions includes a plurality of implantation substeps with different ion energies, so that a resulting doping profile within the implant layer is formed by a superposition of single implants.
10 . The method according to claim 1 , wherein the step of forming the insulated trench gate electrode is carried out after the step of implanting ions.
11 . A power semiconductor device comprising:
a drift layer of a first conductivity type;
a source layer of the first conductivity type on the drift layer, wherein the source layer is partially removed prior or after an implantation step such that a section of the drift layer is uncovered;
an insulated trench gate electrode which extends through the source layer into the drift layer; and
an implant layer of a second conductivity type different than the first conductivity type with a homogeneous doping region having a doping variation of at most 8%, which homogeneous doping region is arranged between the source layer and the drift layer and has a homogeneous doping region thickness of at least 150 nm.
12 . The power semiconductor device according to claim 11 , wherein the homogeneous doping region has a doping concentration in a range from 2×1017 1/cm3 to 7×10 17 1/cm3.
13 . The power semiconductor device according to claim 11 , wherein the homogeneous doping region thickness is at least 200 nm.
14 . The power semiconductor device according to claim 11 , wherein the homogeneous doping region thickness is at most 400 nm.
15 . The power semiconductor device according to claim 11 , wherein the variation of the doping concentration in the homogeneous doping region is at most 4%.
16 . The power semiconductor device according to claim 11 , wherein the source layer has a thickness between 50 nm and 150 nm.
17 . The power semiconductor device according to claim 11 , wherein the source layer has a thickness between 100 nm and 150 nm.
18 . The power semiconductor device according to claim 11 , wherein the source layer has a doping concentration between 1×10 18 1/cm3 and 1×10 20 1/cm3.