Power semiconductor device and operating method
A power semiconductor device is provided. In an embodiment, the power semiconductor device comprises a source region, a channel region in the semiconductor body, and a gate electrode at the channel region. The gate electrode is electrically insulated from the semiconductor body. The channel region is of a second conductivity type different from the first conductivity type. The channel region comprises a first dopant having an activation energy of at most 0.15 eV, and a second dopant having an activation energy of at least 0.3 eV.
1 . A power semiconductor device comprising:
a source region of a first conductivity type in a semiconductor body;
a channel region in the semiconductor body; and a gate electrode at the channel region which is electrically insulated from the semiconductor body,
wherein
the channel region of a second conductivity type different from the first conductivity type,
the channel region comprises a first dopant which is of the second conductivity type having an activation energy of at most 0.15 eV,
the channel region comprises a second dopant which is of the second conductivity type having an activation energy of at least 0.3 eV, and
the power semiconductor device is configured for an operating temperature range of at least 200 K to at most 500 K so that in the operating temperature range an activation level of the second dopant is at most 10 −3 .
2 . The power semiconductor device of claim 1 ,
wherein the semiconductor body is of SiC or of Si,
wherein the first dopant is at least one of B, Al, or Ga, and
wherein the second dopant is at least one of Be, Cd, Co, In, Mg, Mn, S, T, or Zn.
3 . The power semiconductor device of claim 2 , wherein the semiconductor body is of SiC and the first dopant is Al and the second dopant is Mg.
4 . The power semiconductor device of claim 3 , wherein the first conductivity type is n and the second conductivity type is p.
5 . The power semiconductor device of claim 3 , wherein a maximum doping concentration of the second dopant in the channel region is at least 10 16 cm −3 and is at most 10 18 cm −3 .
6 . The power semiconductor device of claim 2 , wherein the first conductivity type is n and the second conductivity type is p.
7 . The power semiconductor device of claim 2 , wherein a maximum doping concentration of the second dopant in the channel region is at least 10 16 cm −3 and is at most 10 18 cm −3 .
8 . The power semiconductor device of claim 1 , wherein the first conductivity type is n and the second conductivity type is p.
9 . The power semiconductor device of claim 8 , wherein a maximum doping concentration of the second dopant in the channel region is at least 10 16 cm −3 and is at most 10 18 cm −3 .
10 . The power semiconductor device of claim 1 , wherein a maximum doping concentration of the second dopant in the channel region is at least 10 16 cm −3 and is at most 10 18 cm −3 .
11 . The power semiconductor device of claim 1 , wherein a doping concentration of the first dopant in the channel region exceeds a doping concentration of the second dopant in the channel region at least locally by at least a factor of 1.5.
12 . The power semiconductor device of claim 1 , wherein the first dopant and the second dopant have different doping profiles.
13 . The power semiconductor device of claim 1 , wherein the whole channel region is doped with the second dopant.
14 . The power semiconductor device of claim 1 , wherein the channel region is only partly doped with the second dopant so that a central part of the semiconductor body below the gate electrode, seen in top view of the gate electrode, is free of the second dopant.
15 . The power semiconductor device of claim 1 , wherein the second dopant is applied in the channel region with a depth of at least 0.1 μm and of at most 2 μm.
16 . The power semiconductor device of claim 1 , which is of a planar type so that the gate electrode is applied only atop the semiconductor body without penetrating the semiconductor body.
17 . The power semiconductor device of claim 1 , which is of a trench type so that the gate electrode penetrates the semiconductor body and is at least partially located in a trench formed in the semiconductor body.
18 . The power semiconductor device of claim 1 , which is a power field-effect transistor or a power bipolar transistor with an insulated gate configured for a maximum current through the channel region of at least 10 A.
19 . The power semiconductor device of claim 1 , wherein a shortest distance between the source region and an associated collector layer, if the power semiconductor devices a power bipolar transistor with an insulated gate, or an associated drain region, if the power semiconductor devices a field-effect transistor, is between 0.5 μm and 20 μm inclusive.
20 . An operating method for a power semiconductor device of claim 1 ,
wherein at room temperature the first dopant is activated but not the second dopant,
wherein as a self-heating current protection, above an operating temperature limit of the power semiconductor device, the second dopant is activated, too, so that above the operating temperature limit a threshold voltage of the power semiconductor devices increased and so that a current through the channel regions decreased with rising temperature.