Power semiconductor component
A power semiconductor component with power semiconductor modules connected to a cooling structure, and a cooling chamber having an inlet and outlet port, and adapted for a flow direction of a coolant substance from the inlet port to the outlet port, each of the cooling structures provided within the cooling chamber consecutively in the flow direction forming a flow resistance region in the cooling chamber, the cooling chamber comprises a bypass region connected in parallel to at least one of the flow resistance regions being closer to the inlet port, and is adapted for a flow rate of the at least one flow resistance region, which is connected in parallel to the bypass region, closer to the inlet port being smaller than a flow rate of one of the at least two flow resistance regions closer to the outlet port.
1 . A power semiconductor component, with
at least two power semiconductor modules, each being connected to a cooling structure, and
a cooling chamber having an inlet port and an outlet port, wherein
the cooling chamber is adapted for a flow direction of a coolant substance within the cooling chamber from the inlet port to the outlet port,
each of the at least two cooling structures are provided within the cooling chamber consecutively in direction of the flow direction such that each of the at least two cooling structures forms a flow resistance region in the cooling chamber,
the cooling chamber comprises at least one bypass region,
the at least one bypass region is connected in parallel to at least one of the at least two flow resistance regions being closer to the inlet port,
the at least one bypass region has a width perpendicular to the flow direction decreasing in flow direction, and
the cooling chamber is adapted for a flow rate of the at least one flow resistance region, which is connected in parallel to the at least one bypass region, closer to the inlet port being smaller than a flow rate of one of the at least two flow resistance regions closer to the outlet port.
2 . The power semiconductor component according to claim 1 , wherein the at least one bypass region connected to one of the at least two flow resistance regions is interconnected by at least one intermediate region to one of the at least two flow resistance regions closer to the outlet port.
3 . The power semiconductor component according to claim 1 , wherein
the cooling chamber comprise at least one opening,
one of the at least two cooling structures protrudes through the at least one opening into the cooling chamber, and
the other of the at least two cooling structures are formed integrally with the cooling chamber.
4 . The power semiconductor component according to claim 1 , wherein the at least one bypass region connected to one of the at least two flow resistance regions is arranged on at least one side surface of the flow resistance region.
5 . The power semiconductor component according to claim 1 , wherein the at least one bypass region connected to one of the at least two flow resistance regions is arranged on a bottom surface of the flow resistance region.
6 . The power semiconductor component according to claim 1 , wherein the at least one bypass region connected to one of the at least two flow resistance regions is arranged on the at least one side surface and on the bottom surface of the flow resistance region.
7 . The power semiconductor component according to claim 5 , wherein
the at least one bypass region being arranged on the bottom surface of the flow resistance region comprises a recess within a bottom of the cooling chamber, and
the recess within the bottom does not protrude beyond the flow resistance region in the flow direction.
8 . The power semiconductor component according to claim 7 , wherein a main surface of the recess within the bottom is inclined with respect to a main extension plane of the power semiconductor component.
9 . The power semiconductor component according to claim 1 , comprising
at least three power semiconductor modules, each being connected to a cooling structure, wherein
the cooling chamber comprises at least two bypass regions,
each of the at least two flow resistance regions being closer to the outlet port are connected in parallel to one of the at least two bypass regions,
a flow rate of one of the at least two bypass regions closer to the inlet port is larger than a flow rate of one of the at least two bypass regions closer to the outlet port.
10 . The power semiconductor component according to claim 7 , wherein a volume of the recess within the bottom closer to the inlet port is larger than a volume of the recess within the bottom closer to the outlet port.
11 . The power semiconductor component according to claim 9 , wherein at least one of
each recess within the bottom comprises a length parallel to the flow direction and the lengths of consecutive recesses within the bottom decrease in flow direction, and
each recess within the bottom comprises a width perpendicular to the flow direction and the width of each recess within the bottom decreases in flow direction.
12 . The power semiconductor component according to claim 9 , wherein
the at least one bypass region being arranged on the side surface of the flow resistance region is formed as a recess within a sidewall of the cooling chamber, and
a volume of the recess within the sidewall closer to the inlet port is larger than a volume of the recess within the sidewall closer to the outlet port.
13 . The power semiconductor component according to claim 12 , wherein at least one of
each recess within the sidewall comprises a width perpendicular to the flow direction and the width of each consecutive recess within the sidewall decreases in flow direction, and
each recess within the sidewall comprises a length parallel to the flow direction and the length of each consecutive recess within the sidewall decrease in flow direction.
14 . The power semiconductor component according to claim 9 , wherein at least one of
cross sections perpendicular to the flow direction of consecutive bypass regions are reduced in flow direction by at least 20%, and
a cross section perpendicular to the flow direction of each bypass region is at least 5% and at most 50% of a total cross section perpendicular to the flow direction comprising the bypass region and the flow resistance region.
15 . The power semiconductor component according to claim 1 , wherein each power semiconductor module comprises at least one power semiconductor chip.