Semiconductor device with a side surface having different partial regions
A semiconductor device with a semiconductor body is specified, the semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface. The semiconductor body comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type thereby forming a first pn junction, wherein the first semiconductor layer is more heavily doped than the second semiconductor layer. A side surface of the semiconductor body extending between the first main surface and the second main surface delimits the semiconductor body in a lateral direction comprises a first partial region and a second partial region, wherein the first partial region and the second partial region delimit the first semiconductor layer in regions.
1 . A semiconductor device with a semiconductor body, the semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, wherein
the semiconductor body comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type thereby forming a first pn junction;
the first semiconductor layer is more heavily doped than the second semiconductor layer;
a side surface of the semiconductor body extending between the first main surface and the second main surface delimits the semiconductor body in a lateral direction;
the side surface of the semiconductor body comprises a first partial region and a second partial region;
the first partial region and the second partial region delimit the first semiconductor layer in regions;
the first partial region delimits the first pn junction in the lateral direction;
the second partial region is spaced apart from the first pn junction in the vertical direction; and
the first partial region is arranged at a first angle and the second partial region is arranged at a second angle with respect to the first pn junction wherein the first angle is larger than the second angle;
the side surface comprises a third partial region, the first partial region being arranged between the second partial region and the third partial region, the third partial region directly adjoining the first partial region;
the semiconductor body further comprises a second pn junction, the third partial region delimiting the second pn junction in the lateral direction; and
the first partial region, the second partial region and the third partial region are flat in a cross-sectional view;
the third partial region is arranged at a third angle with respect to the first pn junction, wherein the third angle is larger than the first angle; and
the third angle is between 20° and 60° inclusive.
2 . The semiconductor device according to claim 1 ,
wherein the first angle is between 5° and 20° inclusive.
3 . The semiconductor device according to claim 1 ,
wherein the second angle is between 0.8° and 5° inclusive.
4 . The semiconductor device according to claim 1 ,
wherein a lateral extent of the first partial region is smaller than a lateral extent of the second partial region when seen along the vertical direction.
5 . The semiconductor device according to claim 1 ,
wherein the first angle is constant within the first partial region and the second angle is constant within the second partial region.
6 . The semiconductor device according to claim 1 ,
wherein the first partial region and the second partial region exhibit traces of a mechanical ablation method.
7 . The semiconductor device according to claim 1 ,
wherein the first partial region and the second partial region exhibit traces of a laser ablation method.
8 . The semiconductor device according to claim 1 ,
wherein the second pn junction is formed between the second semiconductor layer and a third semiconductor layer of the first conductivity type.
9 . The semiconductor device according to claim 1 ,
wherein the semiconductor device is a thyristor.
10 . The semiconductor device according to claim 9 , wherein the thyristor has a positive-negative bevel design, wherein the negative bevel comprises the first and second partial region.