Power semiconductor device with an insulated trench gate electrode

1 . A power semiconductor device comprising:

a semiconductor body extending in a vertical direction between a first main surface and a second main surface;

a trench extending from the first main surface into the semiconductor body in the vertical direction; and

an insulated trench gate electrode that is formed on the first main surface and extends into the trench;

wherein

the trench is subdivided along a main extension direction of the trench in a plurality of segments, so that the trench does not extend continuously on the first main surface;

the insulated trench gate electrode continuously extends over the plurality of segments;

the semiconductor body comprises a source region of a first conductivity type arranged adjacent to the first main surface;

the semiconductor body comprises a drift layer of the first conductivity type;

the semiconductor body comprises a doped region of a second conductivity type different than the first conductivity type, wherein the doped region is arranged in regions in the vertical direction between the source region and the drift layer;

a subregion of the doped region extends between two adjacent segments of the plurality of segments along the main extension direction;

the subregion is more heavily doped than a region of the doped region that extends below the source region; and

between the two adjacent segments the doped region extends deeper into the semiconductor body in the vertical direction than the trench.

2 . The power semiconductor device according to claim 1 , wherein the trench extends from the first main surface into the drift layer.

3 . The power semiconductor device according to claim 1 , wherein the subregion directly adjoins the first main surface.

4 . The power semiconductor device according to claim 1 ,

wherein between the two adjacent segments the doped region extends by at least 0.3 μm deeper into the semiconductor body in the vertical direction than the trench.

5 . The power semiconductor device according to claim 1 ,

wherein between the two adjacent segments the doped region extends by between 0.5 μm and 1 μm deeper into the semiconductor body in the vertical direction than the trench.

6 . The power semiconductor device according to claim 1 ,

wherein the source region is interrupted in a direction parallel to the main extension direction of the trench between two adjacent segments of the trench.

7 . The power semiconductor device according to claim 1 ,

wherein the source region is arranged on both sides of the trench when seen along a transverse direction running in perpendicular to the main extension direction of the trench.

8 . The power semiconductor device according to claim 1 ,

wherein a depth of the trench in the vertical direction is between 0.5 μm and 1 μm inclusive.

9 . The power semiconductor device according to claim 1 ,

wherein an extension of a segment of the plurality of segments along the main extension direction of the trench is between 2 μm and 20 μm inclusive.

10 . The power semiconductor device according to claim 1 ,

wherein a width of the power semiconductor device perpendicular to the main extension direction of the trench is between 1 μm and 6 μm inclusive.

11 . The power semiconductor device according to claim 1 ,

wherein an edge-to-edge distance between adjacent segments along the main extension direction is between 1 μm and 5 μm inclusive.

12 . The power semiconductor device according to claim 1 ,

wherein the semiconductor body is based on SiC.