Gate-tunable entangled photon pair generation
View Patent ↗An electro-optical modulating device and method that provides efficient control of the nonlinear propagation constant in an optical waveguide are featured. The electro-optical modulating device provides large wavelength tunability of the generated entangled photon pairs in real-time by using an applied external bias voltage. The electro-optical modulating device uses gate-tunable material at locations near the optical waveguide. The application of an external bias voltage creates a variable field-effect which in turn varies the optical dielectric properties of the waveguide. The result is a compact active, highly efficient wavelength-tunable integrated quantum photonic device for tunable entangled photon pair generation using an external bias voltage.
1. A method for forming a waveguide for entangled photon pair generation with a tunable wavelength, the method comprising:
forming a waveguide of a nonlinear optical material with one or more sides and a refractive index defined by a corresponding propagation constant;
forming a dielectric spacer to surround the one or more sides of the waveguide;
disposing a tunable permittivity region with a carrier density adjacent to the dielectric spacer; and
applying an external bias voltage on the tunable permittivity region to change the carrier density and to form one of a charge depletion layer or accumulation layer adjacent to the one or more sides of the waveguide, thereby changing the corresponding propagation constant due to a modulation of the refractive index.
2. The method of claim 1 , the method further comprising:
operating the waveguide at an epsilon-near-zero (ENZ) regime; and
wherein the changing the corresponding propagation constant is due to a real part of a permittivity of the tunable permittivity region changing polarity and a signal-idler frequency pair satisfies a quasi-phase matching condition.
3. The method of claim 1 , wherein the tunable permittivity region is one of a conductive oxide, a transparent conductive oxide, field-effect material, electro-optic material, thermo-optic material, 2D-material, or a combination thereof.
4. The method of claim 3 , wherein the tunable permittivity region is one of a transparent conductive oxide (TCO), an indium tin oxide (ITO), an indium zinc oxide (IZO), indium zinc oxide (IVO) zinc oxide an aluminum zinc oxide (AZO), a gallium zinc oxide (GZO), an aluminum gallium zinc oxide (AGZO), a gallium indium zinc oxide (GIZO), a transition metal nitride including Titanium nitride (TiN), Zirconium nitride (ZrN), Hafnium Nitride (HfN), and Tantalum nitride (TaN), or a combination thereof.
5. The method of claim 1 , further comprising:
generating entangled photon pairs from pump photons to pass through the waveguide; and
applying the generated entangled photon pairs to one of quantum sensing, communication, computing, encryption or a combination thereof.
6. The method of claim 1 , further comprising:
generating entangled photon pairs from pump photons to pass through the waveguide, wherein the entangled photon pairs includes one of second-harmonic generation, third-harmonic generation, high-harmonic generation, or a combination thereof.
7. The method of claim 1 , wherein the applying an external bias voltage on the tunable permittivity region to change the carrier density includes tunable permittivity region with various dielectric susceptibility.
8. The method of claim 1 , further comprising:
generating entangled photon pairs from pump photons to pass through the waveguide, wherein the entangled photon pairs are entangled based on a spatial-mode, a polarization, frequency-time, energy-time, hyper-entanglement, angular momentum, a quadrature or a combination thereof.
9. The method of claim 1 , wherein the waveguide is one of potassium titanyl phosphate (KTP), potassium dihydrogen phosphate (KDP), lithium niobate (LN), or a combination thereof or any other nonlinear optical medium.
10. The method of claim 1 , further comprising:
generating entangled photon pairs from pump photons to pass through the waveguide at a given wavelength.
11. An electro-optical modulating device comprising:
a waveguide of a nonlinear optical material with one or more sides and a refractive index defined by a corresponding propagation constant;
a dielectric spacer to surround the one or more sides of the waveguide; and
a tunable permittivity region with a carrier density adjacent to the dielectric spacer in which a carrier density changes based on application of an electric field to form one of a charge depletion layer or accumulation layer adjacent to the one or more sides of the waveguide, thereby changing the corresponding propagation constant due to a modulation of the refractive index.
12. The electro-optical modulating device of claim 11 , wherein the changing the corresponding propagation constant is due to a real part of a permittivity of the tunable permittivity region changing polarity and a signal-idler frequency pair satisfies a quasi-phase matching condition when operating the waveguide at an epsilon-near-zero (ENZ) regime.
13. The electro-optical modulating device of claim 11 , wherein the tunable permittivity region is one of a conductive oxide, a transparent conductive oxide, field-effect material, electro-optic material, thermo-optic material, 2D-material, or a combination thereof.
14. The electro-optical modulating device of claim 13 , wherein the tunable permittivity region is one of a transparent conductive oxide (TCO), an indium tin oxide (ITO), an indium zinc oxide (IZO), indium zinc oxide (IVO) zinc oxide an aluminum zinc oxide (AZO), a gallium zinc oxide (GZO), an aluminum gallium zinc oxide (AGZO), a gallium indium zinc oxide (GIZO), a transition metal nitride including Titanium nitride (TiN), Zirconium nitride (ZrN), Hafnium Nitride (HfN), and Tantalum nitride (TaN), or a combination thereof.
15. The electro-optical modulating device of claim 11 , further comprising:
a light emitting structure disposed adjacent to the waveguide that generates entangled photon pairs from pump photons to pass through the waveguide for use with one of quantum sensing, communication, computing, encryption or a combination thereof.
16. The electro-optical modulating device of claim 11 , further comprising:
a light emitting structure disposed adjacent to the waveguide that generates entangled photon pairs from pump photons to pass through the waveguide, wherein the entangled photon pairs includes one of second-harmonic generation, third-harmonic generation, high-harmonic generation, or a combination thereof.
17. The electro-optical modulating device of claim 11 , wherein the tunable permittivity region includes various dielectric susceptibility.
18. The electro-optical modulating device of claim 11 , further comprising:
a light emitting structure disposed adjacent to the waveguide that generates entangled photon pairs from pump photons to pass through the waveguide, wherein the entangled photon pairs are entangled based on a spatial-mode, a polarization, frequency-time, energy-time, hyper-entanglement, angular momentum, a quadrature or a combination thereof.
19. The electro-optical modulating device of claim 11 , wherein the waveguide is one of potassium titanyl phosphate (KTP), potassium dihydrogen phosphate (KDP), lithium niobate (LN), or a combination thereof or any other nonlinear optical medium.
20. The electro-optical modulating device of claim 11 , further comprising:
a light emitting structure disposed adjacent to the waveguide that generates entangled photon pairs from pump photons to pass through the waveguide, wherein the entangled photon pairs at a given wavelength.