Monolithic LED Array And Method Of Manufacturing Thereof

1 . A light-emitting device comprising a plurality of unpackaged light-emitting diodes arranged in a grid, each of the unpackaged light-emitting diodes surrounded by a reflective coating material, where each of the unpackaged light-emitting diode of the grid fixed in place by the reflective coating material.

2 . The light-emitting device of claim 1 , further including a layer of light absorbing material separating the plurality of unpackaged light-emitting diodes.

3 . The light-emitting device of claim 2 , wherein the light absorbing material partially separates the plurality of unpackaged light-emitting diodes.

4 . The light-emitting device of claim 1 , wherein each of the plurality of unpackaged light-emitting diodes comprise at least one electrical contact, a sapphire substrate, and a light converting layer.

5 . The light-emitting device of claim 1 , further comprising a printed circuit board (PCB), wherein the LED array is mounted on the PCB.

6 . The light-emitting device of claim 4 , wherein the light converting layer comprises phosphor and wherein the at least one electrical contact comprises one or more of copper (Cu), nickel (Ni), aluminum (Al), and gold (Au).

7 . The light-emitting device of claim 6 , wherein the phosphor is selected from a ceramic phosphor plate or phosphor in silicone.

8 . The light-emitting device of claim 1 , wherein the reflective coating material comprises one or more of silicone, silicon dioxide (SiO 2 ), titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), and other metal oxides.

9 . The light-emitting device of claim 1 , wherein the light absorbing material comprises of one or more of silicone, carbon particles, or a metal material.

10 . The light-emitting device of claim 1 , wherein each of the plurality of unpackaged light-emitting diode (LED) die are separated from an adjacent plurality of unpackaged light-emitting diode (LED) die by a distance in a range of about 10 μm to about 500 μm.

11 . The light-emitting device of claim 1 , wherein the reflective coating material has a reflectance in a range of from 80% to 100%.

12 . The light-emitting device of claim 1 , wherein the reflective coating material as a thickness in a range of from 10 μm to 500 μm.

13 . A method of manufacturing a light-emitting diode (LED) device, the method comprising:

attaching a plurality of unpackaged light-emitting diodes to a support material;

forming a reflective coating material around each of the plurality of unpackaged light-emitting diodes;

forming an opening in the reflective coating material between each of the plurality of unpackaged light-emitting diodes, the opening extending through the reflective coating material;

depositing a light absorbing material in the opening; and

removing the plurality of unpackaged light-emitting diodes from the support material to form a light-emitting diode (LED) array.

14 . The method of claim 13 , further comprising planarizing the light absorbing material.

15 . The method of claim 14 , further comprising sawing the light-emitting diode (LED) array.

16 . The method of claim 14 , further comprising soldering the light-emitting diode (LED) array to a printed circuit board (PCB).

17 . The method of claim 15 , wherein the opening extends partially through the reflective coating material.