Silicon nitride sintered body, wear-resistant member using the same, and method for producing silicon nitride sintered body
View Patent ↗A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities: 0.8≤dA/dB≤1.2; and 0.8≤rA/rB≤1.2.
1. A silicon nitride sintered body having a shape of a sphere, the silicon nitride sintered body comprising a silicon nitride crystal grains and grain boundary phases, wherein
the sphere before being subjected to surface processing has a diameter of 8 mm or more and 60 mm or less as the width,
when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy inequalities:
0.8≤dA/dB≤0.97or 1.01≤dA/dB≤1.2; and
0.8≤rA/rB≤0.95or 1.05≤rA/rB≤1.2,
and both the average grain diameter dA and the average grain diameter dB of the silicon nitride sintered body are 1.1 μm or more.
2. The silicon nitride sintered body according to claim 1 , wherein both the first region and the second region have 40% or more of the silicon nitride crystal grains.
3. The silicon nitride sintered body according to claim 1 , wherein a relation between a ratio pA of the silicon nitride crystal grains to a total value of elements other than Si and N in the first region and a ratio pB of the silicon nitride crystal grains to a total value of elements other than Si and N in the second region satisfies the inequality:
0.8≤pA/pB≤1.2.
4. The silicon nitride sintered body according to claim 3 , wherein detected elements other than Si and N are determined by quantitative analysis of elements per unit area.
5. The silicon nitride sintered body according to claim 1 , wherein the average grain diameter dA, the average aspect ratio rA, the average grain diameter dB, and the average aspect ratio rB are determined based on the silicon nitride crystal grains present in a 20 μm×20 μm unit area in each of the first region and the second region.
6. A wear-resistant member using the silicon nitride sintered body according to claim 1 .
7. A method for producing the silicon nitride sintered body according to claim 1 , comprising
a forming step of forming a granulated powder at a pressure of 200 MPa or more, the granulated powder being prepared by granulating a raw material mixture of a silicon nitride powder and a sintering aid powder.