Implantations for forming source/drain regions of different transistors
A method includes forming a first transistor including forming a first gate stack, epitaxially growing a first source/drain region on a side of the first gate stack, and performing a first implantation to implant the first source/drain region. The method further includes forming a second transistor including forming a second gate stack, forming a second gate spacer on a sidewall of the second gate stack, epitaxially growing a second source/drain region on a side of the second gate stack, and performing a second implantation to implant the second source/drain region. An inter-layer dielectric is formed to cover the first source/drain region and the second source/drain region. The first implantation is performed before the inter-layer dielectric is formed, and the second implantation is performed after the inter-layer dielectric is formed.
1. A structure comprising:
a semiconductor region; and
a first transistor comprising:
a first channel in the semiconductor region;
a first gate stack on the first channel;
a first gate spacer on a first sidewall of the first gate stack; and
a first doped region on a side of the first channel, wherein the first doped region is laterally spaced apart from the first gate spacer, and wherein a portion of the semiconductor region laterally between the first doped region and the first gate spacer has a lower doping concentration than the first doped region, and wherein the portion of the semiconductor region extends at least to a bottom end of the first doped region.
2. The structure of claim 1 further comprising a second transistor comprising:
a second channel in the semiconductor region;
a second gate stack on the second channel;
a second gate spacer on a second sidewall of the second gate stack; and
a second doped region adjacent to the second channel, wherein a first edge of the second doped region is vertically aligned to a second edge of the second gate spacer.
3. The structure of claim 2 , wherein the first channel has a first channel length smaller than a second channel length.
4. The structure of claim 3 , wherein the first gate stack has first gate width smaller than a second gate width of the second gate stack.
5. The structure of claim 2 , wherein the first transistor is a logic transistor, and the second transistor is an additional transistor in a static random-access memory cell.
6. The structure of claim 2 , wherein the first transistor is a logic transistor, and the second transistor is an input-output transistor.
7. The structure of claim 1 further comprising:
a first epitaxy region, with the first doped region being in the first epitaxy region, wherein the portions of the first epitaxy region outside of the first doped region have a first doping concentration of a conductive type, and the first doped region has a second doping concentration of the conductivity type, and wherein the second doping concentration is higher than the first doping concentration.
8. The structure of claim 7 , wherein:
the first epitaxy region comprises an epitaxy semiconductor material different from a material of the first channel, and the first doped region is laterally spaced apart from opposing edges of the epitaxy semiconductor material.
9. The structure of claim 1 further comprising:
a silicide region over the first doped region, wherein the silicide region is laterally spaced apart from a corresponding nearest outer edge of the first gate spacer.
10. The structure of claim 9 , wherein edges of the silicide region are substantially flush with corresponding edges of the first doped region.
11. The structure of claim 1 , wherein the first transistor is a p-type transistor.
12. A structure comprising:
a semiconductor substrate; and
a first transistor comprising:
a first gate stack over the semiconductor substrate;
a first gate spacer aside of the first gate stack;
a first epitaxy region on a side of the first gate stack, wherein the first epitaxy region comprises:
a first lower portion having a conductive type, wherein the first lower portion has a first doping concentration of the conductivity type; and
a first upper portion having a second doping concentration of the conductivity type, wherein the second doping concentration is higher than the first doping concentrate, and wherein a first inner edge of the first upper portion is spaced apart from a first nearest outer edge of the first gate spacer; and
a first source/drain silicide region over and contacting the first epitaxy region, wherein the first source/drain silicide region has a second inner edge vertically aligned to the first inner edge of the first upper portion.
13. The structure of claim 12 further comprising a second transistor comprising:
a second gate stack over the semiconductor substrate;
a second gate spacer on a sidewall of the second gate stack; and
a second epitaxy region aside of the second gate stack, wherein the second epitaxy region comprises:
a second lower portion having the conductive type, wherein the second lower portion has the first doping concentration; and
a second upper portion having a third doping concentration of the conductivity type, wherein the third doping concentration is higher than the first doping concentrate, and the second upper portion extends to a position that is vertically aligned to a second nearest outer edge of the second gate spacer.
14. The structure of claim 13 further comprising a second source/drain silicide region over and contacting the second epitaxy region, wherein the second source/drain silicide region is laterally recessed from respective edges of the second upper portion.
15. The structure of claim 13 , wherein the first transistor has a first channel length smaller than a second channel length of the second transistor.
16. The structure of claim 12 , wherein the conductive type is p-type.
17. The structure of claim 12 , wherein the conductive type is n-type.
18. A structure comprising:
a semiconductor substrate; and
a first transistor comprising:
a first gate stack over the semiconductor substrate;
a first gate spacer on a sidewall of the first gate stack; and
a first semiconductor region aside of the first gate stack, wherein the first semiconductor region comprises silicon germanium;
a first p-type doped region in the first semiconductor region, wherein the first p-type doped region has a p-type dopant concentration higher than p-type concentrations of portions of the first semiconductor region on opposing sides of the first p-typed doped region; and
a first source/drain silicide region over and contacting the first p-type doped region, wherein the first source/drain silicide region has substantially a same width as the first p-type doped region.
19. The structure of claim 18 further comprising a second transistor comprising:
a second gate stack over the semiconductor substrate;
a second gate spacer on an additional sidewall of the second gate stack;
a second semiconductor region aside of the second gate stack, wherein the second semiconductor region comprises silicon germanium;
a second p-type doped region in the second semiconductor region; and
a second source/drain silicide region over and contacting the second p-type doped region, wherein the second p-type doped region extends laterally beyond opposite edges of the second source/drain silicide region.
20. The structure of claim 19 , wherein the first transistor has a first channel length, and the second transistor has a second channel length greater than the first channel length.