IP Library Granted Patent US 12,688,998
Granted Patent B2
US 12,688,998 · App. 18/068,293 · Granted Jul 21, 2026

Method and system for determining a charged particle beam exposure for a local pattern density

Inventors: Akira Fujimura (Saratoga, CA); Harold Robert Zable (Palo Alto, CA); Nagesh Shirali (San Jose, CA); Abhishek Shendre (Fremont, CA); William E. Guthrie (Santa Clara, CA); Ryan Pearman (San Jose, CA)
Assignee: D2S, Inc.
H01J37/3026G03F1/36G03F1/70G03F7/2061H01J37/3177H01J2237/31761H01J2237/31771H01J2237/31774H01J2237/31776
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,688,998
App. No.
18/068,293
Filed
Dec 19, 2022
Granted
Jul 21, 2026
Kind
B2
Art Unit
2851
USPC
716/53
Abstract

Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area, based on an original set of exposure information. A pre-proximity effect correction (PEC) maximum dose for the local pattern density is determined, based on a pre-determined target post-PEC maximum dose. The pre-PEC maximum dose is calculated near an edge of the desired shape. Methods also include modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information.

Claims (24)

1 . A method for exposing a desired shape in an area on a surface using a charged particle beam system, the method comprising:

determining a local pattern density for the area, based on an original set of exposure information;

determining a pre-proximity effect correction (PEC) maximum dose for the local pattern density, based on a pre-determined target post-PEC maximum dose, wherein the pre-PEC maximum dose is calculated near an edge of the desired shape; and

modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information;

wherein the pre-determined target post-PEC maximum dose is based on a maximum write time.

2 . The method of claim 1 , wherein the modified set of exposure information is refined by PEC resulting in adjusted dosages that are less than the pre-determined target post-PEC maximum dose.

3 . The method of claim 1 , wherein a portion of a width of the desired shape exceeds a pre-determined width.

4 . The method of claim 1 , wherein at a location where a width of a portion of the desired shape is below a pre-determined width, the pre-PEC maximum dose is calculated near a center of the desired shape.

5 . The method of claim 1 , further comprising calculating a backscatter for a sub area of the area, based on the local pattern density for the area.

6 . The method of claim 5 , further comprising increasing a dosage for at least one pixel in a plurality of pixels in the sub area, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area.

7 . The method of claim 6 , wherein the dosage for the at least one pixel in the plurality of pixels in the sub area is increased so that the backscatter is increased to a pre-determined value.

8 . The method of claim 6 , wherein the dosage for the at least one pixel in the plurality of pixels in the sub area is increased only if the at least one pixel is more than a pre-determined distance from the edge of the desired shape in the area on the surface.

9 . The method of claim 6 , wherein the increased dosage of the at least one pixel in the plurality of pixels in the sub area is applied closer than a pre-determined distance from an inner edge of the desired shape in the area on the surface.

10 . The method of claim 6 , wherein the increase in dosage comprises an artificial background dose.

11 . The method of claim 6 , wherein the original set of exposure information comprises information for multiple exposure passes, and wherein the increasing of the backscatter of the sub area only occurs in one exposure pass of the multiple exposure passes.

12 . The method of claim 5 , wherein the sub area is subdivided into partitions, wherein an artificial background dose is determined for each partition.

13 . The method of claim 12 , wherein the artificial background dose for any location within an individual partition is interpolated across the individual partition.

14 . The method of claim 13 , wherein the interpolation is based on the artificial background doses for adjacent partitions.

15 . The method of claim 1 , wherein a mask exposure is performed inline with one or more steps selected from the group consisting of determining the local pattern density, determining the pre-PEC maximum dose, determining an artificial background dose, and creating the modified set of exposure information.

16 . The method of claim 1 , further comprising inputting a target dose margin, wherein the target dose margin is used to set the pre-determined target post-PEC maximum dose.

17 . The method of claim 1 , further comprising calculating a dose margin for the desired shape to be exposed.

18 . The method of claim 17 , further comprising calculating a target minimum dose margin at a pre-determined edge location of a pre-determined pattern in a pre-determined backscatter area;

wherein the pre-PEC maximum dose is determined to achieve the dose margin below the target minimum dose margin for the desired shape to be exposed.

19 . The method of claim 1 , further comprising exposing the surface with the modified set of exposure information.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 20, 2023
From: FUJIMURA, AKIRA; ZABLE, HAROLD ROBERT; SHIRALI, NAGESH; SHENDRE, ABHISHEK; GUTHRIE, WILLIAM E.; PEARMAN, RYAN
To: D2S, INC.
Reel/Frame 062435/0347 →
Continuity (4)
Continuation In Part 17304307 · Jun 17, 2021
Continuation In Part 16934281 · Jul 21, 2020
Continuation 16422269 · May 24, 2019
Related Publication 20230124768A1 · Apr 20, 2023
References Cited (117)
US 4463265A · Owen et al. · 1984 [cited by applicant]
US 5451487A · Abe et al. · 1995 [cited by applicant]
US 5510214A · Pan et al. · 1996 [cited by applicant]
US 5582938A · Ham · 1996 [cited by applicant]
US 5847959A · Veneklasen et al. · 1998 [cited by applicant]
US 5885748A · Ohnuma · 1999 [cited by applicant]
US 6528806B1 · Kawamura · 2003 [cited by applicant]
US 6872507B2 · Tzu et al. · 2005 [cited by applicant]
US 7241542B2 · Hudek et al. · 2007 [cited by applicant]
US 8062813B2 · Zable et al. · 2011 [cited by applicant]
US 8137871B2 · Zable et al. · 2012 [cited by applicant]
US 8221939B2 · Zable et al. · 2012 [cited by applicant]
US 8221940B2 · Zable et al. · 2012 [cited by applicant]
US 9038003B2 · Pearman et al. · 2015 [cited by applicant]
US 9043734B2 · Fujimura et al. · 2015 [cited by applicant]
US 9057956B2 · Fujimura et al. · 2015 [cited by applicant]
US 9343267B2 · Fujimura et al. · 2016 [cited by applicant]
US 9612530B2 · Fujimura et al. · 2017 [cited by applicant]
US 9625809B2 · Fujimura et al. · 2017 [cited by applicant]
US 9990708B2 · Toyoda · 2018 [cited by examiner]
US 10478744B2 · Meyer et al. · 2019 [cited by applicant]
US 10522329B2 · Platzgummer et al. · 2019 [cited by applicant]
US 10748744B1 · Fujimura et al. · 2020 [cited by applicant]
US 11062878B2 · Fujimura et al. · 2021 [cited by applicant]
US 11756765B2 · Fujimura et al. · 2023 [cited by applicant]
US 12457630B2 · Gupta · 2025 [cited by examiner]
US 20020148978A1 · Innes et al. · 2002 [cited by applicant]
US 20030124442A1 · Yang · 2003 [cited by applicant]
US 20040011966A1 · Sasaki et al. · 2004 [cited by applicant]
US 20040178366A1 · Ando et al. · 2004 [cited by applicant]
US 20060183025A1 · Yang et al. · 2006 [cited by applicant]
US 20070196768A1 · Ogino · 2007 [cited by examiner]
US 20080168419A1 · Burkhardt et al. · 2008 [cited by applicant]
US 20080203324A1 · Fujimura et al. · 2008 [cited by applicant]
US 20090181551A1 · Tan et al. · 2009 [cited by applicant]
US 20100055586A1 · Fujimura et al. · 2010 [cited by applicant]
US 20120094219A1 · Fujimura et al. · 2012 [cited by applicant]
US 20120219886A1 · Fujimura et al. · 2012 [cited by applicant]
US 20120221981A1 · Fujimura et al. · 2012 [cited by applicant]
US 20130205264A1 · Fujimura et al. · 2013 [cited by applicant]
US 20130283216A1 · Pearman et al. · 2013 [cited by applicant]
US 20130288181A1 · Sugiyama · 2013 [cited by applicant]
US 20130309610A1 · Zable et al. · 2013 [cited by applicant]
US 20140007023A1 · Shin et al. · 2014 [cited by applicant]
US 20140138527A1 · Kato et al. · 2014 [cited by applicant]
US 20140346369A1 · Matsumoto · 2014 [cited by examiner]
US 20160195805A1 · Fujimura et al. · 2016 [cited by applicant]
US 20160252807A1 · Manakli et al. · 2016 [cited by applicant]
US 20160276132A1 · Platzgummer et al. · 2016 [cited by applicant]
US 20160349626A1 · Matsumoto · 2016 [cited by applicant]
US 20170124247A1 · Fujimura et al. · 2017 [cited by applicant]
US 20170139327A1 · Nomura · 2017 [cited by applicant]
US 20170278672A1 · Suganuma et al. · 2017 [cited by applicant]
US 20190066975A1 · Matsumoto · 2019 [cited by examiner]
US 20190066976A1 · Platzgummer · 2019 [cited by examiner]
US 20190304748A1 · Yoshikawa et al. · 2019 [cited by applicant]
US 20190304749A1 · Yoshikawa · 2019 [cited by examiner]
US 20200096876A1 · Lin · 2020 [cited by examiner]
US 20200098545A1 · Chang et al. · 2020 [cited by applicant]
CN 1530755A · 2004 [cited by applicant]
CN 103488042A · 2014 [cited by applicant]
CN 103858211A · 2014 [cited by applicant]
EP 1429368A2 · 2004 [cited by applicant]
EP 3264442A1 · 2018 [cited by applicant]
JP H07297094A · 1995 [cited by applicant]
JP H08321462A · 1996 [cited by applicant]
JP H10055958A · 1998 [cited by applicant]
JP 2003338460A · 2003 [cited by applicant]
JP 2005019426A · 2005 [cited by applicant]
JP 2006032480A · 2006 [cited by applicant]
JP 2012527765 · 2012 [cited by applicant]
JP 2013115226A · 2013 [cited by applicant]
JP 2013219288A · 2013 [cited by applicant]
JP 2013229512A · 2013 [cited by applicant]
JP 2010098275A · 2014 [cited by applicant]
JP 2014512670A · 2014 [cited by applicant]
JP 2014530494A · 2014 [cited by applicant]
JP 2015005729A · 2015 [cited by applicant]
JP 2016174152A · 2016 [cited by applicant]
JP 2017092467A · 2017 [cited by applicant]
JP 2018006748A · 2018 [cited by applicant]
JP 2018107179A · 2018 [cited by applicant]
JP 7474787B2 · 2024 [cited by applicant]
KR 1020150142900A · 2015 [cited by applicant]
TW 201142904A · 2011 [cited by applicant]
TW 201717244B · 2017 [cited by applicant]
Notice of Allowance dated Feb. 11, 2025 for Korean Patent Application No. 10-2021-7038241. [cited by applicant]
Office Action dated Dec. 24, 2024 for Japan Patent Application No. 2024-065404. [cited by applicant]
Office Action dated Feb. 24, 2025 for Republic of Korea Patent Application No. 10-2021-7019507. [cited by applicant]
Office Action dated Jan. 28, 2025 for Japan Patent Application No. 2021-535205. [cited by applicant]
Office Action dated Jul. 31, 2024 for U.S. Appl. No. 18/365,146. [cited by applicant]
Notice of Allowance and Fees dated Sep. 26, 2023 for U.S. Appl. No. 18/168,772. [cited by applicant]
Office Action dated Nov. 21, 2023 for Japan Patent Application No. 2021-535205. [cited by applicant]
Official Letter and Search Report dated Sep. 28, 2023 for Taiwan Patent Application No. 109116592. [cited by applicant]
Office Action dated Sep. 17, 2024 for Japan Patent Application No. 2021-535205. [cited by applicant]
Notice of Allowance and Fees dated Jul. 7, 2023 for U.S. Appl. No. 17/304,307. [cited by applicant]
Office Action dated Jun. 20, 2023 for U.S. Appl. No. 18/168,772. [cited by applicant]
Geraint Owen et al., “Proximity effect correction for electron beam lithography by equalization of background dose,” Journal of Applied Physics, vol. 54, Issue 6, Jun. 1983. [cited by applicant]
International Search Report dated Apr. 13, 2020 for PCT Patent Application No. PCT/IB2019/060968. [cited by applicant]
International Search Report dated Aug. 18, 2020 for PCT Patent Application No. PCT/IB2020/054546. [cited by applicant]
Klimpel, T. et al., “Proximity effect correction optimizing image quality and writing time for an electron multi-beam mask writer,” Proc. SPIE vol. 8522, Nov. 8, 2012. [cited by applicant]
Mack, Chris A. et al., “Electron-beam lithography simulation for maskmaking, part V: Impact of GHOST proximity effect correction on process window”, SPIE vol. 3873, pp. 2-20, Dec. 30, 1999. [cited by applicant]
Notice of Allowance dated Apr. 22, 2020 for U.S. Appl. No. 16/422,269. [cited by applicant]
Notice of Allowance dated Mar. 15, 2021 for U.S. Appl. No. 16/934,281. [cited by applicant]
Notice of Allowance dated Sep. 1, 2020 for U.S. Appl. No. 16/231,447. [cited by applicant]
Office Action dated Dec. 8, 2020 for U.S. Appl. No. 16/934,281. [cited by applicant]
Office Action dated May 29, 2020 for U.S. Appl. No. 16/231,447. [cited by applicant]
Office Action dated Nov. 10, 2021 for Austria Patent Application No. A9484/2019. [cited by applicant]
Office Action dated Nov. 24, 2021 for U.S. Appl. No. 17/135,400. [cited by applicant]
Office Action dated Apr. 16, 2024 for Japan Patent Application No. 2021-535205. [cited by applicant]
Office Action dated Mar. 1, 2023 for U.S. Appl. No. 17/304,307. [cited by applicant]
Official Letter and Search Report dated Aug. 21, 2023 for Taiwan Patent Application No. 108146715. [cited by applicant]
Office Action dated Aug. 18, 2025 for Republic of Korea Patent Application No. 10-2021-7019507. [cited by applicant]
Office Action dated Oct. 21, 2025 for Japan Patent Application No. 2024-211143. [cited by applicant]
Office Action dated Nov. 26, 2025 for Republic of Korea Patent Application No. 10-2025-7013161. [cited by applicant]
Office Action dated Feb. 10, 2026 for Japan Patent Application No. 2024-211143. [cited by applicant]
Notice of Allowance dated Mar. 30, 2026 for Republic of Korea Patent Application No. 10-2025-7013161. [cited by applicant]