Granted Patent B2

US 12,384,959 · App. 18/069,301 · Granted Aug 12, 2025

Inventors: Daisuke Fukushi (Yokohama, JP); Shuichi Saito (Yokohama, JP)

Assignees: Kabushiki Kaisha Toshiba; Toshiba Materials Co., Ltd.

C09K9/00C01G41/006G02F1/1524C01P2002/77C01P2002/78C01P2002/85C01P2004/64C01P2006/40C01P2006/60

Abstract

Claims (11)

1. A tungsten oxide material comprising potassium, the tungsten oxide material having a shape of particles including a central section and a peripheral section adjacent to the central section and having an average particle size of 100 nm or less, a periodicity of a crystal varying between the central section and the peripheral section;

wherein the tungsten oxide material has a crystal structure in which plural phases intersecting with a direction from inside toward a surface of the particles and being parallel to each other are sequentially arranged in the direction, and an interatomic distance Ic between the plural phases adjacent to each other in the central section is different from an interatomic distance Ip between the plural phases adjacent to each other in the peripheral section, and

wherein a ratio I p /I c of the interatomic distance I p to the interatomic distance I c is within a range of 1.1 to 3.

2. The tungsten oxide material according to claim 1 , wherein a content of the potassium is within a range of 1 mol % to 50 mol %.

3. The tungsten oxide material according to claim 2 , wherein a ratio K XPS /K ICP of a content K XPS of the potassium according to X-ray photoelectron spectroscopy to a content K ICP of the potassium according to an inductively coupled plasma emission spectrometric analysis method is 1.05 or more.

4. The tungsten oxide material according to claim 2 , wherein the peripheral section has a maximum width of 1.5 nm to 5 nm.

5. The tungsten oxide material according to claim 1 , wherein a ratio K XPS /K ICP of a content K XPS of the potassium according to X-ray photoelectron spectroscopy to a content K ICP of the potassium according to an inductively coupled plasma emission spectrometric analysis method is 1.05 or more.

6. The tungsten oxide material according to claim 1 , wherein the peripheral section has a maximum width of 1.5 nm to 5 nm.

7. The tungsten oxide material according to claim 1 , wherein the interatomic distance Ic is within a range of 2.8 Å to 3.9 Å.

8. A tungsten oxide powder mass for an electrochromic device, the tungsten oxide powder mass comprising 80% by mass to 100% by mass of the tungsten oxide material according to claim 1 .

9. A slurry for producing an electrochromic device, the slurry comprising the tungsten oxide material according to claim 1 .

Assignments (3)

Priority Claims (1)

Continuity (2)

References Cited (26)