Wordline or pillar state detection for faster read access times
A memory device includes an array of memory cells arranged in sub-blocks. Memory cells of a sub-block are coupled to a pillar of the array and are associated with multiple wordlines. To perform a read operation, control logic coupled with the array performs operations including: tracking a length of time that a selected wordline takes to reach a pass voltage before being able to read data from a memory cell associated with the selected wordline; in response to the length of time satisfying a first threshold criterion, causing a first delay time to pass before reading the data; and in response to the length of time satisfying a second threshold criterion that is longer than the first threshold criterion, causing a second delay time to pass before reading the data, the second delay time being longer than the first delay time.
1. A memory device comprising:
an array of memory cells comprising multiple sub-blocks, wherein memory cells of a sub-block are coupled to a pillar of the array and are associated with multiple wordlines; and
control logic operatively coupled with the array, wherein the control logic, in performing a read operation, is to perform operations comprising:
tracking a length of time that a selected wordline takes to reach a pass voltage before being able to read data from a memory cell associated with the selected wordline;
in response to the length of time satisfying a first threshold criterion, causing a first delay time to pass before reading the data from the memory cell; and
in response to the length of time satisfying a second threshold criterion that is longer than the first threshold criterion, causing a second delay time to pass before reading the data from the memory cell, the second delay time being longer than the first delay time.
2. The memory device of claim 1 , further comprising a counter, wherein tracking the length of time comprises:
starting the counter upon beginning to ramp a voltage of the selected wordline; and
stopping the counter in response to the selected wordline reaching a threshold percentage of the pass voltage.
3. The memory device of claim 2 , wherein the operations further comprise reading a value of the counter to determine the length of time.
4. The memory device of claim 1 , wherein the operations further comprise comparing the length of time with time period values in a lookup table to determine whether the length of time satisfies at least one of the first threshold criterion or the second threshold criterion.
5. The memory device of claim 1 , wherein the first threshold criterion corresponds to the pillar starting at a negative voltage.
6. The memory device of claim 1 , wherein the second threshold criterion corresponds to the pillar starting at an approximately zero voltage.
7. The memory device of claim 1 , wherein the operations further comprise, in response to the length of time satisfying a third threshold criterion that is longer than the second threshold criterion, causing a third delay time to pass before reading the data from the memory cell, the third delay time being longer than the second delay time.
8. The memory device of claim 1 , wherein the second delay time comprises a delay that is caused in response to a first read access of the sub-block after being programmed.
9. The memory device of claim 1 , wherein the first delay time comprises a delay that is caused in response to read accesses of the sub-block that are subsequent to a first read access of the sub-block after being programmed.
10. A system comprising:
a memory device comprising an array of memory cells, the array of memory cells comprising multiple sub-blocks, wherein memory cells of a sub-block are associated with multiple wordlines; and
a processing device operatively coupled with the memory device, the processing device to perform operations comprising:
determining that a read operation performed on a memory cell of the sub-block is a first read access of the sub-block since being programmed; and
communicating to control logic of the memory device to use a first delay time, of multiple delay times, after a selected wordline of the memory cell has reached a pass voltage and before reading data from the memory cell.
11. The system of claim 10 , wherein the operations further comprise:
determining that a second read operation performed on the sub-block is a second read access of the sub-block; and
communicating to the control logic to use a second delay time, of the multiple delay times, after the selected wordline of a selected memory cell has reached the pass voltage and before reading data from the selected memory cell, wherein the second delay time is shorter than the first delay time.
12. The system of claim 11 , wherein the memory cells of the sub-block are associated with a pillar of the sub-block, the second delay time is associated with a transient state of the pillar, and wherein the operations further comprise:
detecting the pillar exit from the transient state; and
sending, together with a subsequent read operation, a command to the control logic to again use the first delay time.
13. The system of claim 12 , wherein the detecting the pillar exit from the transient state comprises one of:
detecting a reset of the voltage of the pillar;
detecting the memory device satisfy a threshold temperature; or
detecting a period of time pass that is associated with the pillar returning to an approximately zero voltage.
14. A method comprising:
tracking, by control logic of a memory device that includes a sub-block of memory cells with which are associated multiple wordlines, a length of time that a selected wordline takes to reach a pass voltage before being able to read data from a memory cell associated with the selected wordline to perform a read operation;
in response to the length of time satisfying a first threshold criterion, causing, by the control logic, a first delay time to pass before reading the data from the memory cell; and
in response to the length of time satisfying a second threshold criterion that is longer than the first threshold criterion, causing, by the control logic, a second delay time to pass before reading the data from the memory cell, the second delay time being longer than the first delay time.
15. The method of claim 14 , further comprising:
starting a counter upon beginning to ramp a voltage of the selected wordline;
stopping the counter in response to the selected wordline reaching a threshold percentage of the pass voltage; and
reading a value of the counter to determine the length of time.
16. The method of claim 14 , further comprising comparing the length of time with time period values in a lookup table to determine whether the length of time satisfies at least one of the first threshold criterion or the second threshold criterion.
17. The method of claim 14 , wherein the first threshold criterion corresponds to a pillar of the sub-block starting at a negative voltage, and wherein the second threshold criterion corresponds to the pillar starting at an approximately zero voltage.
18. The method of claim 14 , further comprising, in response to the length of time satisfying a third threshold criterion that is longer than the second threshold criterion, causing a third delay time to pass before reading the data from the memory cell, the third delay time being longer than the second delay time.
19. The method of claim 14 , wherein the second delay time comprises a delay that is caused in response to a first read access of the sub-block after being programmed.
20. The method of claim 14 , wherein the first delay time comprises a delay that is caused in response to read accesses of the sub-block that are subsequent to a first read access of the sub-block after being programmed.