Metal-insulator-metal capacitors
A metal-insulator-metal (MIM) capacitor includes a first group of metal contacts disposed on a first region of an isolation layer spaced apart from each other in a first direction, a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction, a dielectric layer disposed between the first group of metal contacts and the second group of metal contacts, a first metal electrode disposed to contact the top surfaces of the first group of metal contacts, and a second metal electrode disposed to contact the top surfaces of the second group of metal contacts.
1. A metal-insulator-metal (MIM) capacitor comprising:
a first group of metal contacts disposed on a first region of an isolation layer on a semiconductor layer spaced apart from each other in a first direction;
a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction;
a third group of metal contacts disposed on a third region between the first and second region of the isolation layer spaced apart from each other in the first direction;
a dielectric layer disposed between the first group of metal contacts, the second group of metal contacts, and the third group of metal contacts;
a first metal electrode disposed to contact top surfaces of the first group of metal contacts, top surfaces of the second group of metal contacts, and a top surface of an endmost metal contact of the third group of metal contacts; and
a second metal electrode disposed to contact top surfaces of the remaining metal contacts except the endmost metal contact of the third group of metal contacts among the third group of metal contacts.
2. The MIM capacitor of claim 1 , wherein the number of the first group of metal contacts, the number of the second group of metal contacts, and the number of the third group of metal contacts are equal to each other.
3. The MIM capacitor of claim 1 , wherein the third group of metal contacts face respective metal contacts of the first group of metal contacts in a second direction intersecting the first direction and face respective metal contacts of the second group of metal contacts in the second direction.
4. The MIM capacitor of claim 1 , wherein the isolation layer is a trench isolation layer.
5. The MIM capacitor of claim 1 , wherein the first metal electrode includes:
a first sub-metal electrode disposed to contact top surfaces of the first group of metal contacts;
a second sub-metal electrode disposed to contact top surfaces of the second group of metal contacts; and
a bridge metal electrode disposed to contact a top surface of the endmost metal contact of the third group of metal contacts and to connect the first sub-metal electrode to the second sub-metal electrode.
6. The MIM capacitor of claim 5 ,
wherein the first sub-metal electrode which is disposed on the first group of metal contacts has a planar shape;
wherein the second sub-metal electrode which is disposed on the second group of metal contacts has a planar shape;
wherein the bridge metal electrode which is disposed on the endmost metal contact of the third group of metal contacts has a planar shape; and
wherein the second metal electrode which is disposed on the remaining metal contacts except the endmost metal contact of the third group of metal contacts among the third group of metal contacts has a planar shape.