Semiconductor device comprising electron blocking layer
A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer; and wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2.
1. A semiconductor device, comprising:
a first semiconductor structure;
a second semiconductor structure on the first semiconductor structure;
an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface;
a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer has a band gap greater than the band gap of one of the first barrier layers;
a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and
a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer;
wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2,
wherein one of the first thickness and the second thickness is smaller than a thickness of one of the first barrier layers, and
wherein the second thickness is smaller than a thickness of the first electron blocking layer.
2. The semiconductor device according to claim 1 , wherein the first electron blocking layer comprises In a Al b Ga 1-a-b N, the first aluminum-containing layer comprises In c Al a Ga (1-c-d) N, the second aluminum-containing layer comprises In e Al f Ga 1-e-f N, and 0≤c<a<1, 0≤e<a<1, 0<b<d<1, 0<b<f<1.
3. The semiconductor device according to claim 2 , wherein 0<a≤0.05.
4. The semiconductor device according to claim 2 , wherein e=0 and 0.5<f≤1.
5. The semiconductor device according to claim 1 , wherein the first aluminum-containing layer and the second aluminum-containing layer comprise the same material.
6. The semiconductor device according to claim 1 , wherein the first thickness and/or the second thickness ranges between 0.5 nm and 15 nm both inclusive.
7. The semiconductor device according to claim 1 , further comprising a second electron blocking region on the second aluminum-containing layer;
wherein the second electron blocking region has a band gap greater than the band gap of one of the first barrier layers and lower than the band gap of the first aluminum-containing layer.
8. The semiconductor device according to claim 7 , wherein the second electron blocking region comprises a single electron blocking layer comprising In c Al d Ga 1-c-a N, wherein 0≤c≤0.005, 0<d≤0.5.
9. The semiconductor device according to claim 7 , wherein the second electron blocking region comprises alternating electron blocking layers and second barriers, a band gap of each of the alternating electron blocking layer is higher than a band gap of each of the second barriers.
10. The semiconductor device according to claim 7 , wherein the well layers comprise a first well layer closest to the second electron blocking region and a second well layer neighboring the first well layer; and wherein a concentration of a p-type dopant in the second well layer is not more than 1×10 18 /cm 3 .
11. The semiconductor device according to claim 1 , wherein the first electron blocking layer comprises In h Al i Ga 1-h-i N and 0≤h≤0.05, 0<i≤0.3.
12. The semiconductor device according to claim 1 , further comprising a confinement layer between the active region and the first aluminum-containing layer and having a thickness less than a thickness of one of the first barrier layers.
13. The semiconductor device according to claim 12 , wherein the thickness of the confinement layer is not less than 3 nm.
14. The semiconductor device according to claim 1 , wherein a distance between the first aluminum-containing layer and the upper surface of the active region is at least 3 nm.
15. The semiconductor device according to claim 1 , further comprising a semiconductor stack between the active region and the first semiconductor structure, wherein the semiconductor stack comprises a first group stack comprising alternating first semiconductor layers and second semiconductor layers.
16. The semiconductor device according to claim 15 , wherein the semiconductor stack further comprises a second group stack on the first group stack, wherein the second group stack comprises alternating third semiconductor layers and fourth semiconductor layers.
17. The semiconductor device according to claim 16 , wherein the semiconductor stack further comprising an intermediate layer between the first group stack and the second group stack; and
each of the second semiconductor layer and the fourth semiconductor layer comprises indium, wherein the highest content of indium of the second semiconductor layer closest to the intermediate layer is higher than the highest content of indium of the fourth semiconductor layer closest to the intermediate layer.
18. The semiconductor device according to claim 1 , further comprising a p-type dopant above the bottom surface of the active region and comprising a concentration profile of the p-type dopant, wherein the concentration profile comprises a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.
19. The semiconductor device according to claim 18 , wherein the peak shape comprises a full width at half maximum (FWHM) between 5 nm and 50 nm both inclusive.
20. The semiconductor device according to claim 18 , further comprising a topmost semiconductor surface, a distance between the topmost semiconductor surface and the peak concentration value is less than 200 nm.