IP Library Granted Patent US 11,981,991
Granted Patent B2
US 11,981,991 · App. 18/094,757 · Granted May 14, 2024

Sputter trap having a thin high purity coating layer and method of making the same

Inventors: Jaeyeon Kim (Liberty Lake, WA); Patrick Underwood (Charlotte, NC); Susan D. Strothers (Mead, WA); Shih-Yao Lin (Hsinchu, TW); Michael D. Payton (Rockford, WA); Scott R. Sayles (Mead, WA)
Assignee: Honeywell International Inc.
C23C14/564C23C14/3407H01J37/3435H01J37/3491
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Quick Facts
Patent No.
US 11,981,991
App. No.
18/094,757
Granted
May 14, 2024
Kind
B2
Abstract

An aluminum or copper alloy sputtering chamber includes a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the front surface A coating of titanium particles is formed on the sputter trap.

Claims (25)

1. A sputtering chamber component comprising:

a front surface formed of an aluminum or copper alloy;

a back surface opposite the front surface;

a sputter trap formed on at least a portion of the front surface, the sputter trap having a surface roughness greater than the back surface of the sputtering chamber component; and

a coating of titanium particles formed on the sputter trap, the coating having a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is at least about 99.99% pure, wherein the titanium particles of the coating are substantially diffused and have plastic deformation.

2. The sputtering chamber component of claim 1 , wherein the coating is at least about 99.995% pure.

3. The sputtering chamber component of claim 1 , wherein a concentration of metal-carbide at a surface of the coating is about 70% to 100% less than a concentration of metal-carbide on the front surface of the sputter trap before the coating is applied.

4. The sputtering chamber component of claim 1 , wherein a surface of the coating is substantially free of metal-carbides.

5. The sputtering chamber component of claim 1 , wherein a surface of the coating is substantially free of aluminum oxide.

6. The sputtering chamber component of claim 1 , wherein the titanium particles of the coating are uniformly distributed throughout the coating.

7. The sputtering chamber component of claim 1 , wherein the coating is formed from particles have an average particle size from about 200 mesh to about 320 mesh.

8. The sputtering chamber component of claim 1 , wherein the coating has a thickness from about 0.025 mm to about 0.25 mm (about 0.001 inches to about 0.01 inches).

9. The sputtering chamber component of claim 1 , wherein the sputtering chamber component is a backing plate of a sputtering target assembly.

10. The sputtering chamber component of claim 1 , wherein the sputtering chamber component is a backing plate of a monolithic sputtering target assembly.

11. The sputtering chamber component of claim 1 , wherein the sputter trap with the coating has a surface roughness greater than the roughness greater than the back surface of the sputtering chamber component.

12. A method of forming a sputter trap on an aluminum or copper alloy sputtering chamber component, the method comprising:

cold spraying titanium particles on at least a portion of a textured surface of the sputtering chamber component such that the particles undergo plastic deformation and adhere to the textured surface to form a layer in which the individual particles are substantially indistinguishable from one another, the layer having a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is from about 99.99% to about 99.995% pure.

13. The method of claim 12 , further comprising forming the textured surface on at least a portion of the sputtering chamber component by bead blasting, knurling, or machining.

14. The method of claim 12 , wherein a concentration of metal-carbide at a surface of the layer is less than 70% of a concentration of metal-carbide in the at least a portion of the textured surface of the sputtering chamber component before the layer is applied.

15. The method of claim 12 , wherein the thickness of the layer is from about 0.025 mm to about 0.25 mm (0.001 inches to about 0.01 inches).

16. The method of claim 12 , wherein the thickness of the layer is from about 0.025 mm to about 0.127 mm (0.001 inches to about 0.005 inches).

17. The method of claim 12 , wherein the cold spraying comprises cold spraying titanium particles having an average particle size from about 200 mesh to about 320 mesh.

18. The method of claim 12 , wherein the sputtering chamber component is a backing plate of a sputtering target assembly.

19. The method of claim 12 , wherein the sputtering chamber component is a backing plate of a monolithic sputtering target assembly.

20. The method of claim 12 , wherein after cold spraying the titanium particles, a surface texture of the textured surface is retained.

Assignments (3)
NUNC PRO TUNC ASSIGNMENT Recorded Apr 13, 2026
From: HONEYWELL INTERNATIONAL INC.
To: SOLSTICE ADVANCED MATERIALS US, INC.
Reel/Frame 074350/0321 →
SECURITY INTEREST Recorded Jan 12, 2026
From: SOLSTICE ADVANCED MATERIALS US, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 074569/0260 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 11, 2025
From: KIM, JAEYEON; UNDERWOOD, PATRICK; STROTHERS, SUSAN D.; LIN, SHIH-YAO; PAYTON, MICHAEL D.; SAYLES, SCPTT R.
To: HONEYWELL INTERNATIONAL INC.
Reel/Frame 070475/0907 →