Detection device
A detection device is provided and includes insulating substrate; detection element including first photodiode, thin film transistors including a first thin film transistor; non-detection element including second photodiode and first thin film transistor; reset control scan line; first reset signal line; and second reset signal line, wherein reset control scan line is coupled to two gates of first thin film transistor of detection element and two gates of first thin film transistor of non-detection element, first reset signal line is coupled to a source of first thin film transistor of detection element, and second reset signal line is coupled to a source of first thin film transistor of non-detection element.
1. A detection device comprising:
an insulating substrate;
a detection element including
a first photodiode, and
a plurality of thin film transistors including a first thin film transistor;
a non-detection element including
a second photodiode and
a first thin film transistor;
a reset control scan line;
a first reset signal line;
a second reset signal line, and
a power supply line adjacent to the second reset signal line,
wherein
the reset control scan line is coupled to two gates of the first thin film transistor of the detection element and two gates of the first thin film transistor of the non-detection element,
the first reset signal line is coupled to a source of the first thin film transistor of the detection element,
the second reset signal line is coupled to a source of the first thin film transistor of the non-detection element,
the first thin film transistor of the non-detection element includes a semiconductor,
the semiconductor intersects two branches of the reset control scan line,
the power supply line extends parallel to the second reset signal line,
the power supply line crosses the semiconductor of the first thin film transistor of the non-detection element, and
the power supply line is not coupled to the non-detection element.
2. The detection device of claim 1 , wherein the non-detection element includes only a single transistor that is the first thin film transistor.
3. The detection device of claim 2 , wherein a drain of the first thin film transistor is coupled to a cathode of the second photodiode.
4. A detection device comprising:
an insulating substrate;
a detection element including
a first photodiode, and
a plurality of thin film transistors including a first thin film transistor;
a non-detection element including
a second photodiode and
a first thin film transistor;
a reset control scan line;
a first reset signal line;
a second reset signal line; and
a read control scan line extending in parallel to the reset control scan line, wherein
the reset control scan line is coupled to two gates of the first thin film transistor of the detection element and two gates of the first thin film transistor of the non-detection element,
the first reset signal line is coupled to a source of the first thin film transistor of the detection element,
the second reset signal line is coupled to a source of the first thin film transistor of the non-detection element,
the first thin film transistor of the non-detection element includes a semiconductor, and
the semiconductor intersects two branches of the reset control scan line,
the read control scan line extends across the non-detection element, and
the read control scan line is not coupled to the non-detection element.
5. A detection device comprising:
a detection element including
a first photodiode, and
a plurality of thin film transistors including a first thin film transistor, a second thin film transistor, and a third thin film transistor; and
a non-detection element including
a second photodiode and
a first thin film transistor,
wherein
the non-detection element includes only a single transistor that is the first thin film transistor,
the first thin film transistor of the non-detection element is a reset transistor,
the first thin film transistor of the detection element is a reset transistor,
the second thin film transistor of the detection element is a source follower transistor, and
the third thin film transistor of the detection element is a read transistor.
6. The detection device of claim 5 , further comprising a read control scan line, and an output signal line, wherein
the non-detection element is coupled to none of the read control scan line and the output signal line.
7. The detection device of claim 5 , further comprising a power supply line,
wherein the non-detection element is not coupled to the power supply line.
8. The detection device of claim 5 , further comprising a reset control scan line, wherein
the first thin film transistor of the detection element has a double gate structure,
the first thin film transistor of the non-detection element has a double gate structure, and
the reset control scan line is coupled to two gates of the first thin film transistor of the detection element and two gates of the first thin film transistor of the non-detection element.
9. The detection device of claim 8 , further comprising a read control scan line, and an output signal line, wherein
the non-detection element is coupled to none of the read control scan line and the output signal line.
10. The detection device of claim 8 , further comprising a power supply line,
wherein the non-detection element is not coupled to the power supply line.