An optocoupler includes a light output chip and a light-sensing chip. A light-receiving surface of the light-sensing chip is disposed to face a light output surface of the light output chip. The light-sensing chip and the light output chip are a green light-emitting diode and a blue light-emitting diode, respectively. Accordingly, the optocoupler has a stable output performance at a working temperature ranging from −55° C. to 150° C. and a high response frequency.
1 . An optocoupler, comprising:
an electrical substrate, including an insulating layer, a first pad assembly, a second pad assembly, a first electrode assembly, and a second electrode assembly; wherein the first pad assembly and the second pad assembly are disposed on a first side of the insulating layer and are spaced apart from each other, the first electrode assembly and the second electrode assembly are disposed on an opposite second side of the insulating layer, the first electrode assembly is electrically connected to the first pad assembly through first conductive pillars, the second electrode assembly is electrically connected to the second pad assembly through second conductive pillars, the first pad assembly comprises two first pads spaced apart from each other, and the second pad assembly comprises two second pads spaced apart from each other;
a blue-emitting diode, acting as a light output chip, wherein the blue-emitting diode has a horizontal structure and is disposed on the two first pads of the electrical substrate in a flipped manner to form an electrical connection with the two first pads, wherein the two first pads are located between the insulting layer and the blue-emitting diode;
a green-emitting diode, acting as a light-sensing chip, wherein a light-receiving surface of the green-emitting diode is disposed to face a light output surface of the blue-emitting diode, and the green-emitting diode has a horizontal structure and is stacked on the blue-emitting diode; and
two conductive wires, wherein two electrodes of the light-sensing chip are electrically connected to the two second pads through the two conductive wires.
2 . The optocoupler according to claim 1 , wherein an intrinsic capacitance of the light output chip is less than 50 pF.
3 . The optocoupler according to claim 1 , wherein a wall-plug efficiency of the light output chip is greater than or equal to 30% when a current density is 133 mA/mm2.
4 . The optocoupler according to claim 1 , wherein the blue-emitting diode is used to generate a first beam having a first peak wavelength, the green-emitting diode is used to generate a second beam having a second peak wavelength, the first peak wavelength ranges from 420 nm to 500 nm, and the second peak wavelength ranges from 500 nm to 580 nm.
5 . The optocoupler according to claim 4 , wherein the first peak wavelength ranges from 430 nm to 470 nm, and the second peak wavelength ranges from 500 nm to 545 nm.
6 . The optocoupler according to claim 1 , wherein a ratio between an area of the light-receiving surface and an area of the light output surface is between 0.2 and 1.5.
7 . The optocoupler according to claim 1 , further comprising a light-permeable layer, wherein the light output chip is disposed below the light-sensing chip along a vertical direction, the light-permeable layer is disposed between the light output chip and the light-sensing chip, and a light transmittance of the light-permeable layer is greater than or equal to 50%.
8 . The optocoupler according to claim 7 , further comprising:
an inner package layer covering the light output chip, the light-sensing chip, the light-permeable layer, and the two conductive wires; and
an outer package layer covering an outer surface of the inner package layer.
9 . The optocoupler according to claim 8 , wherein a light reflectivity of the inner package layer is greater than or equal to 50%, and a Shore D hardness of the inner package layer is less than or equal to 60 so as to prevent breakage of the two conductive wires; and
wherein a light reflectivity of the outer package layer is greater than or equal to 50%, and a Shore D hardness of the outer package layer is greater than 60 so as to protect the inner package layer.
10 . The optocoupler according to claim 1 , wherein an indium concentration of the green-emitting diode is greater than or equal to an indium concentration of the blue-emitting diode.
11 . The optocoupler according to claim 1 , wherein an indium concentration of the blue-emitting diode ranges between 12.4 mol % and 18.8 mol %, and the blue-emitting diode is configured to generate a first beam having a first peak wavelength from 430 nm to 470 nm; and
wherein an indium concentration of the green-emitting diode ranges between 23.2 mol % and 29.1 mol %, and the green-emitting diode is configured to generate a second beam having a second peak wavelength from 500 nm to 545 nm.
12 . An optocoupler, comprising:
an electrical substrate, including an insulating layer, a first pad assembly, a second pad assembly, a first electrode assembly, and a second electrode assembly; wherein the first pad assembly and the second pad assembly are disposed on a first side of the insulating layer and are spaced apart from each other, the first electrode assembly and the second electrode assembly are disposed on an opposite second side of the insulating layer, the first electrode assembly is electrically connected to the first pad assembly, the second electrode assembly is electrically connected to the second pad assembly, the first pad assembly comprises two first pads spaced apart from each other, and the second pad assembly comprises two second pads spaced apart from each other;
a light output chip, having a horizontal structure and disposed on the two first pads of the electrical substrate in a flipped manner to form an electrical connection with the two first pads, wherein the two first pads are located between the insulting layer and the light output chip; and
a light-sensing chip, having a horizontal structure and stacked on the light output chip, wherein a light-receiving surface of the light-sensing chip is disposed to face towards a light output surface of the light output chip, the light output chip is one of a blue light-emitting diode and a green light-emitting diode, and the light-sensing chip is the other one of the blue light-emitting diode and the green light-emitting diode;
conductive wires, wherein two electrodes of the light-sensing chip are electrically connected to the two second pads through the conductive wires;
a light permeable layer, sandwiched between the light output surface of the light output chip and the light-receiving surface of the light-sensing chip, wherein a material of the light permeable layer is a resin; and
a cover structure, disposed to cover the light output chip, the light-sensing chip, the light permeable layer, and the conductive wires.
13 . The optocoupler according to claim 12 , wherein the cover structure comprises:
an inner package layer covering the light output chip, the light-sensing chip, the light permeable layer, and the conductive wires; and
an outer package layer covering an outer surface of the inner package layer;
wherein a Shore D hardness of the inner package layer is less than or equal to 60, so as to prevent breakage of the conductive wires; and a Shore D hardness of the outer package layer is greater than 60, so as to protect the inner package layer.