Semiconductor power device, semiconductor power system and method for cooling a semiconductor power device
A effective lower flow direction comprises power module and a housing that is arranged on an upper surface of the power module defining an upper flow section for liquid cooling of the power module in between. The upper flow section comprises an inlet, an outlet and a given upper flow path in between defining an effective upper flow direction. Further, a cooling unit is arranged on the lower surface of the power module defining a lower flow section for liquid cooling of the power module in between. The lower flow section comprises an inlet, an outlet and a given lower flow path in between defining an effective lower flow direction, such that during operation a coolant flows through the upper and the lower flow section providing a double-sided liquid cooling of the power module. The effective upper flow direction is different from the effective lower flow direction.
1 . A semiconductor power system, comprising:
a plurality of semiconductor power devices, wherein each of the plurality of semiconductor power devices comprises
a power module with an upper surface and a lower surface opposite to the upper surface,
a housing that is arranged on the upper surface of the power module defining an upper flow section for liquid cooling of the power module in between, the upper flow section comprising an inlet, an outlet, and a given upper flow path in between, configured such that an effective upper flow direction is predefined,
a cooling unit that is arranged on the lower surface of the power module defining a lower flow section for liquid cooling of the power module in between, the lower flow section comprises an inlet, an outlet, and a given lower flow path in between, configured such that an effective lower flow direction is predefined, such that during operation a coolant flows through the upper flow path and the coolant flows through the lower flow path providing a double-sided liquid cooling of the power module, wherein the effective upper flow direction is different from the effective lower flow direction,
a baseplate forming a top wall of the cooling unit and supporting the lower surface of the power module,
wherein the plurality of semiconductor devices comprises a first semiconductor power and a second semiconductor power device,
wherein the lower flow section of the first semiconductor device is fluidically connected to the lower flow section of the second semiconductor device,
wherein the lower flow section of the second semiconductor power device is fluidically connected to the upper flow section of the second semiconductor power device, and
wherein the upper flow section of the second semiconductor power device is fluidically connected to the upper flow section of the first semiconductor power device by an outlet from the second semiconductor power device that feeds through the baseplate of the second semiconductor power device into a flow connection coupling pipeline positioned entirely sealed within the lower flow sections of the first and second semiconductor power devices, that is fluidically connected to an inlet to the first semiconductor power device that feeds through the baseplate of the first semiconductor power device into the upper flow section of the first semiconductor power device.
2 . The semiconductor power system according to claim 1 , wherein the effective upper flow direction and the effective lower flow direction are opposite or anti-parallel.
3 . The semiconductor power system according to claim 1 , further comprising an inlet to the lower flow sections and an outlet from the upper flow sections that are arranged at the same side of the semiconductor power system such that the upper flow paths and the lower flow paths form a U-shaped flow channel.
4 . The semiconductor power system according to claim 1 , wherein, in each of the plurality of semiconductor power devices each baseplate comprises a cooling structure with at least one of a pin-fin area, ribs, a skived structure, or meander channels that is arranged inside the lower flow path.
5 . The semiconductor power system according to claim 1 , wherein, in each of the plurality of semiconductor power devices, the upper flow path comprises a flow channel with a height that is at least 10% of a height of a flow channel of the lower flow path with respect to a stacking direction of the semiconductor power device from the lower flow section towards the upper flow section.
6 . The semiconductor power system according to claim 1 , wherein, in each of the plurality of semiconductor power devices, the housing is formed as a resin and/or gel encapsulation enclosing the power module and wherein the upper flow path is formed embedded in the encapsulation.
7 . The semiconductor power system according to claim 1 , wherein, in each of the plurality of semiconductor power devices, the upper flow path and/or the lower flow path are limited by walls comprising at least one of copper, copper alloy, aluminum, aluminum alloy, or an insulating material.
8 . The semiconductor power system according to claim 1 , wherein, in each of the plurality of semiconductor power devices, the power module comprises electronics and a substrate with metallization and an isolating sheet made of resin or ceramic.
9 . The semiconductor power system according to claim 8 , wherein, in each of the plurality of semiconductor power devices, the upper flow path is configured such that during operation the coolant is in thermal contact with at least one of the electronics and the metallization or the isolating sheet of the substrate.
10 . The semiconductor power system according to claim 1 , wherein, in each of the plurality of semiconductor power devices, the upper flow path comprises at least two flow channels separated from each other.
11 . The semiconductor power system according to claim 1 , wherein, in each of the plurality of semiconductor power devices, the upper flow section is configured such that a ceiling wall of the upper flow path is exposed from the housing.
12 . The semiconductor power system according to claim 1 , wherein the respective cooling unit of the first and the second semiconductor power device are formed as a common continuous cooler.
13 . The semiconductor power system according to claim 12 , further comprising at least one sealing member between the baseplate and the flow connection section.
14 . A method for cooling a semiconductor power system that comprises a plurality of semiconductor power devices, each of the plurality of semiconductor power devices comprising a power module, a housing that is arranged on an upper surface of the power module defining an upper flow section for liquid cooling of the power module in between, the upper flow section comprising an inlet, an outlet, and a given upper flow path in between configured such that an effective upper flow direction is predefined, a cooling unit that is arranged on the lower surface of the power module defining a lower flow section for liquid cooling of the power module in between, the lower flow section comprising an inlet, an outlet, and a given lower flow path in between configured such that an effective lower flow direction is predefined, and a baseplate forming a top wall of the cooling unit and supporting a lower surface of the power module, the method comprising:
providing at least one coolant for liquid cooling of the power modules in the plurality of semiconductor power devices,
feeding the at least one coolant into the lower flow path of the lower flow section of a first one of the plurality of semiconductor power devices,
feeding the at least one coolant from the lower flow path of the lower flow section of the first semiconductor power device into the lower flow path of the lower flow section of a second one of the plurality of semiconductor power devices,
feeding the at least one coolant from the lower flow path of the lower flow section of the second semiconductor power device into the upper flow path of the upper flow section of the second semiconductor power device, and
feeding the at least one coolant from the upper flow path of the upper flow section of the second semiconductor power device through the baseplate of the second semiconductor power device into a flow connection coupling pipeline positioned entirely sealed within the lower flow sections of the first and second semiconductor power devices, and from the flow connection section through the baseplate of the first semiconductor power device into the upper flow path of the upper flow section of the first semiconductor power device,
such that during operation the at least one coolant flows through the lower and the upper flow sections and provides a double-sided liquid cooling of the power modules, wherein the effective upper flow direction is different from the effective lower flow direction.
15 . The method according to claim 14 , wherein the effective upper flow direction and the effective lower flow direction are opposite or anti-parallel.
16 . The method according to claim 14 , wherein an inlet to the lower flow sections and an outlet from the upper flow sections are arranged at the same side of the semiconductor power system such that the upper flow paths and the lower flow paths form a U-shaped flow channel.